30V 2A POWER P MOSFET Search Results

mosfet p-channel 2A

Abstract: 24V 1A mosfet
Contextual Info: LT2347 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2347 is the P-Channel logic enhancement mode power field ● -30V/-2.6A, RDS ON =85 mΩ@VGS=-10V effect transistors are produced using high cell density, DMOS trench ● -30V/-2A, RDS(ON)=120 mΩ@VGS=-4.5V

Contextual Info: LT2347 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2347 is the P-Channel logic enhancement mode power field ● -30V/-2.6A, RDS ON =85 mΩ@VGS=-10V effect transistors are produced using high cell density, DMOS trench ● -30V/-2A, RDS(ON)=120 mΩ@VGS=-4.5V

Contextual Info: LT2347 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2347 is the P-Channel logic enhancement mode power field ● -30V/-2.6A, RDS ON =85 mΩ@VGS=-10V effect transistors are produced using high cell density, DMOS trench ● -30V/-2A, RDS(ON)=120 mΩ@VGS=-4.5V

Contextual Info: AP2625GY RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D2 D1 -30V RDS ON Low Gate Drive Surface Mount Package BVDSS ID G2 G1 185m - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques

AP2623Y

Contextual Info: AP2623Y Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low On-resistance ▼ Surface Mount Package -30V RDS ON 170mΩ ID G2 G1 BVDSS - 2A S2 S1 Description D2 S1 Advanced Power MOSFETs utilized advanced processing techniques

Contextual Info: AP2623GY RoHS-compliant Product Advanced Power Electronics Corp. DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D2 D1 -30V RDS ON Low On-resistance Surface Mount Package BVDSS ID G2 G1 170m - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques

Contextual Info: Advanced Power Electronics Corp. AP2625GY-HF-3 Dual P-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs BV DSS Low Gate Charge D2 D1 Low Gate Drive -30V R DS ON 185mΩ ID RoHS-compliant, halogen-free -2A G2 G1 S1 Description S2

Contextual Info: Advanced Power Electronics Corp. AP2623GY-HF-3 Dual P-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs Low Gate Charge D2 D1 Low On-resistance BV DSS -30V R DS ON 170mΩ ID RoHS-compliant, halogen-free -2A G2 G1 S1 Description

AP2625GY

Abstract: G2 SOT
Contextual Info: AP2625GY RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low Gate Drive ▼ Surface Mount Package -30V RDS ON 185mΩ ID G2 G1 BVDSS - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques

AP2625GY

Contextual Info: AP2625GY RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low Gate Drive ▼ Surface Mount Package -30V RDS ON 185mΩ ID G2 G1 BVDSS - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques

AP2623GY

Contextual Info: AP2623GY Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low On-resistance ▼ Surface Mount Package -30V RDS ON 170mΩ ID G2 G1 BVDSS - 2A S2 S1 Description D2 S1 Advanced Power MOSFETs utilized advanced processing techniques

Contextual Info: AP2623GY RoHS-compliant Product Advanced Power Electronics Corp. DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low On-resistance ▼ Surface Mount Package -30V RDS ON 170mΩ ID G2 G1 BVDSS - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques

DIODE a40

Contextual Info: *57 4 40 4 40 SGS-THOMSON iL iO M K I TYPE STP4NA40 STP4N A40FI stp NA STP NA FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss R DS on Id 400 V 400 V < 2a < 2a 4 A 2.8 A • T Y P IC A L Ros(on) = 1-7 . . ■ ■ . ■ ± 30V GATE TO SOURCE VOLTAGE RATING

30V 20A power p MOSFET

Abstract: motor driver full bridge 20A N P CHANNEL dual POWER MOSFET pcb stepper motor TMC239A-SA TMC32NP-MLP 10V STEPPER MOTOR 8 pin stepper motor driver TMC32NP2-SM8 TMC249
Contextual Info: Integrated Circuits Power Drivers for Stepper Motors TMC32NP-MLP TMC32NP2-SM8 Complementary 30V MOSFET Half Bridge / Full Bridge The TMC32NP-MLP is a miniature N & P channel MOSFET complementary pair, ideally suited for motor drive applications. It perfectly complements the TMC239A-LA / TMC249ALA stepper motor drivers, in order to build a 2A 4 devices / 4A (8 devices) stepper motor

Contextual Info: FW356 FW356 Ordering number : ENN7743 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • For motor drives, inverters. The FW356 in corporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,

FW156

Contextual Info: FW156 Ordering number : ENN7784 P-Channel Silicon MOSFET FW156 General-Purpose Switching Device Applications Features • • • • For DC / DC converters, Motor drives, Inverters. Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C

W356

Abstract: FW356
Contextual Info: FW356 Ordering number : ENN7743 FW356 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • For motor drives, inverters. The FW356 in corporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,

IXDN502SIA

Abstract: ixdn502pi IXDI502 IXDN502 IXDF502D1 IXDF502SIA IXDF502 IXDF502PI IXDI502PI IXDI502SIA
Contextual Info: IXDF502 / IXDI502 / IXDN502 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 2 Amps • High 2A Peak Output Current

Contextual Info: MA3304V10000000 N-Ch and P-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3304V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

SSP2N60A

Abstract: n-channel 250w power mosfet
Contextual Info: SSP2N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 p A Max. @ VDS= 600V ■ Lower R DS(on) : 3.892

Contextual Info: SSW/I2N90A Advanced Power MOSFET FEATURES B V dss = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge R DS on = 7 .0 Q . In = 2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 p A (M a x ) @ V0s = 9OOV

KMB2D0N60SA

Contextual Info: SEMICONDUCTOR KMB2D0N60SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment.

TMC32NP

Abstract: T207 DIODE set of transistors TMC239A TMC239 TMC249 TMC249A TMC249A-LA 10V STEPPER MOTOR HC 148 TRANSISTOR
Contextual Info: TMC32NP-MLP Manual Complementary 30V Enhancement Mode MOSFET In Miniature Package For use with e.g. TMC239 or TMC249 Version: 1.01 11 April 2007 Trinamic Motion Control GmbH & Co KG Sternstraße 67 D - 20 357 Hamburg, Germany http://www.trinamic.com TMC32NP-MLP Manual V1.01 /11 April 2007

Contextual Info: TMC32NP-MLP Manual Complementary 30V Enhancement Mode MOSFET In Miniature Package For use with e.g. TMC239 or TMC249 Version: 1.01 11 April 2007 Trinamic Motion Control GmbH & Co KG Sternstraße 67 D - 20 357 Hamburg, Germany http://www.trinamic.com TMC32NP-MLP Manual V1.01 /11 April 2007