310 NPN Search Results

P3596

Abstract: GEXY6710 Q62702-P1673 Q62702-P3595 Q62702-P3596 Q62702-P874
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 310 SFH 310 FA SFH 310 SFH 310 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 310 und bei 880 nm (SFH 310 FA) • Hohe Linearität

SFH 3000

Contextual Info: 2008-11-06 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.0 SFH 310, SFH 310 FA SFH 310 SFH 310 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 450 nm . 1100 nm SFH 310 , 740 nm . 1100 nm (SFH 310 FA) • Package: 3mm Radial (T 1), Epoxy

P3596

Abstract: Q62702-P3595 Q62702-P1673 Q62702-P3596 Q62702-P874
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 310 SFH 310 FA SFH 310 SFH 310 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 310 und bei 880 nm (SFH 310 FA) • Hohe Linearität • 3 mm-Plastikbauform

Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 310 SFH 310 FA SFH 310 SFH 310 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm (SFH 310) und bei 880 nm (SFH 310 FA)

GEXY6710

Abstract: OHLY0598
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 310 SFH 310 FA SFH 310 SFH 310 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm (SFH 310) und bei 880 nm (SFH 310 FA)

Contextual Info: 2014-01-14 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.1 SFH 310, SFH 310 FA SFH 310 SFH 310 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 450 nm . 1100 nm SFH 310 , 740 nm . 1100 nm (SFH 310 FA) • Package: 3mm Radial (T 1), Epoxy

Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 310 SFH 310 FA SFH 310 SFH 310 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 310 und bei 880 nm (SFH 310 FA) • Hohe Linearität • 3 mm-Plastikbauform

310fa

Abstract: 310-FA
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 310 SFH 310 FA SFH 310 SFH 310 FA Wesentliche Merkmale Features • Spektraler Bereich der Fotoempfindlichkeit: 450 nm .1100 nm (SFH 310) • 740 nm .1100 nm (SFH 310FA)

310FA

Abstract: Q62702-P1673 Q62702-P874 Phototransistor 281
Contextual Info: SFH 310 SFH 310 FA SFH 310 SFH 310 FA feof6653 feof6653 Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale Features ● Speziell geeignet für Anwendungen im

OS-PCN-2006-015-A

Abstract: GEXY6710 OHLY0598 Q62702-P3596
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 310 SFH 310 FA SFH 310 SFH 310 FA Not for new design (valid till DC0837, additional information see OS-PCN-2006-015-A) Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich

Contextual Info: SIEMENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 310 SFH 310 FA Wesentliche Merkmale Features • Speziell geeignet für Anw endungen im B ereich von 400 nm bis 1100 nm S F H 310 und bei 880 nm (SFH 310 FA) • H ohe Linearität

foto transistor

Abstract: phototransistor 600 nm GEX06710 Q62702-P1673 Q62702-P874
Contextual Info: SFH 310 SFH 310 FA 4.8 4.4 1.1 0.9 1.8 1.2 29.0 27.0 3.7 3.5 6.1 5.7 0.6 0.4 Chip position GEX06710 feof6653 Collector/ Cathode 3.4 3.1 ø2.9 ø2.7 2.7 2.1 0.7 0.4 0.8 0.4 2.54 mm spacing 0.6 0.4 Area not flat SFH 310 SFH 310 FA feo06653 Neu: NPN-Silizium-Fototransistor

rkm 3B

Abstract: SO2484 BCW67E
Contextual Info: TYPES* MAXIMUM RA TINGS Markmg PNP NPN ELECTRICAL CHARACTERISTICS AT 25 C P tot "cl30 “CEO “EBO lC V V V mA 50 45 50 45 50 45 50 45 50 45 50 45 30 i 25 30 25 30 25 30 25 30 ~ 25 30 25 5 5 5 5, 5 5 5 5 5 ~ 5 5 5 500 ~ 310 1 500 310 500 310 500 310 ' 500

WPTS-310

Contextual Info: Waitrony Photo Transistor Module No.: WPTS-310 1. General Description: Dimensions The WPTS-310 is a high sensitivity NPN silicon phototransistor without flange mounted in a compact clear resin package. This small phototransistor permits narrow angular response.

Contextual Info: SIEM ENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 310 SFH 310 FA M aße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm

Contextual Info: SIEMENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 310 SFH 310 FA M aße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm

2N3563

Abstract: BF163 se5020 Fairchild 2N2857 fairchild to-106 2N3880 BF159 PE5025 2N5130 BF167
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN RF-IF AMPLIFIER AND OSCILLATOR TRANSISTORS BY ASCENDING FREQUENCY (Cont'd) Item DEVICE NO. PG @ f [GMA] (OSC POWER) dB Min MHz C0b @f MHz Pd ta 25°C mW 3.5 (Typ) 60 310 TO-106 0.8 (Typ) 3.0 (Typ) 40 310 TO-106 [C ce]

circuit diagram of ELECTRONIC BALLAST for 40 watt

Abstract: ELECTRONIC BALLAST 36W circuit diagram dali schematic pic16f628 ELECTRONIC BALLAST 4 LAMP SCHEMATIC npn DALI CD with software and design RS232-DALI pc to Microcontroller communication through IR fluorescent ballasts 36w TRANSISTOR IR2159
Contextual Info: Digitally Addressable DALI Dimming Ballast Cecilia Contenti and Tom Ribarich Applications Engineer, International Rectifier, Lighting Group, 101S Sepulveda Blv. El Segundo, CA, 90245-4382 tel. 310 726-8927, fax. (310)726-8846, email: cconten1@irf.com as presented at APEC 2002

FZAM18P1005

Abstract: 18P3005 LED880nm SB310 MS SERIES led optic fiber
Contextual Info: Fiber optic sensors Series 18 Sb 310 mm / Tw 60 mm RS 655-650 PNP light operate dark operate light/dark operate RS 655-650 FZAM18P1005 FZAM 18P3005 technical data actual range Sb through beam sensors 310 mm distance T w (diffuse sensors) 60 mm o utput indicator

BC807-16

Abstract: BC807-25 BC807-40 BC817
Contextual Info: BC807-16/ -25/ -40 PNP SURFACE MOUNT TRANSISTOR Features 310 mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary NPN Types Available BC817 SOT-23

marking 3G

Abstract: ICES BC856A-BC858C bc856b
Contextual Info: BC856A - BC858C PNP SURFACE MOUNT SMALL SIGNALTRANSISTOR Features • • • • Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary NPN Types Available BC846-BC848 For Switching and AF Amplifier Applications

BC846A

Abstract: BC846B BC847A BC847B BC847C BC848A BC848B BC848C
Contextual Info: TRANSYS BC846A - BC848C ELECTRONICS NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR LIMITED Features Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary PNP Types Available BC856-BC858 For Switching and AF Amplifier Applications

transistor af 178

Abstract: BC807 BC817-16 BC817-25 BC817-40 MC9100
Contextual Info: BC817-16 / -25 / -40 NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features 310 mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available BC807

BUL310

Contextual Info: B U L 310 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED