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    3150Q Search Results

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    Rochester Electronics LLC DS3150QNC1-

    3.3V, DS3/E3/STS-1 LINE INTERFAC
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    DigiKey DS3150QNC1- Bulk 5,211 10
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    Rochester Electronics LLC DS3150Q

    DS3/E3/STS-1 LINE INTERFACE UNIT
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    DigiKey DS3150Q Tube 3,911 11
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    3peak Incorporated TPL803150Q-EV1R-S

    IC REG LINEAR 5V 300MA 8-EMSOP
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    DigiKey () TPL803150Q-EV1R-S Cut Tape 2,939 1
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    TPL803150Q-EV1R-S Digi-Reel 2,939 1
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    Rochester Electronics LLC DS3150QC1-

    DS3/E3/STS-1 LINE INTERFACE UNIT
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    DigiKey DS3150QC1- Tube 1,905 11
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    KEMET Corporation PEG124RL3150QE4

    CAP ALUM 150UF 200V AXIAL TH
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    DigiKey PEG124RL3150QE4 Tray 1,434 1
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    Mouser Electronics PEG124RL3150QE4
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    TTI PEG124RL3150QE4 Bulk 272
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    Avnet Abacus PEG124RL3150QE4 31 Weeks 1,088
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    3150Q Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: \dt LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT) ADVANCE INFORMATION IDT71T024 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T024 is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. It is fabricated using ID Ts highreliability CMOS technology. This state-of-the-art technology,


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    128KX IDT71T024 IDT71T024 576-bit 71T024 PDF

    Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,


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    128Kx IDT71V024L T71V024L 576-bit 10-338-207Q PDF

    Contextual Info: m PRELIMINARY GM76FV8128,GM76FU8128,GM76FS8128,GM76FR8128 LG Semicon Co.,Ltd. 131,072 w o r d s x 8 b i t CMOS STATIC RAM Description Pin Configuration The GM76FV8128 / GM76FU8128 / GM76FS8128 / GM76FS8128 is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a


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    GM76FV8128 GM76FU8128 GM76FS8128 GM76FR8128 70/85ns. 32Small PDF

    automatic transfer switch circuit diagram

    Abstract: sanyo optical pickup unit LA7266 EN3357 sanyo OPTICAL PICK-UP auto iris driver DC auto iris LC9907 dc iris driver block diagram of iris based security system
    Contextual Info: O rd e rin g n u m b e r :E N 3357 1 No 3357 / LC9907 Tim ing Generator fo r Solid-State Imager The LC9907 is a tim in g generator exclusively used fo r 2-hundred- thousand pixel white-and-black, and color CCD Solid-State Imager. Features: • Single +5V supply voltage


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    EN3357 LC9907 LC9907 automatic transfer switch circuit diagram sanyo optical pickup unit LA7266 EN3357 sanyo OPTICAL PICK-UP auto iris driver DC auto iris dc iris driver block diagram of iris based security system PDF

    1S08S

    Contextual Info: KM68FV1000, KM68FS1000, KM68FR1Q00 Family CMOS SRAM 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4nm Full CMOS • Organization : 128Kx8 bit > Power Supply Voltage KM 68FV1000 Fam ily. 3.0V - 3.6V


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    KM68FV1000, KM68FS1000, KM68FR1Q00 128Kx8 68FV1000 68FS1000 68FR1000 32-SOP-525, 32-TSO P1-0820F, 1S08S PDF

    Contextual Info: P re lim in a ry K M 6 8 F S 2 0 0 0 Z , K M 6 8 F R 2 0 0 0 Z Fami l y C M O S SR A M D o c u m e n t Title 2 56 Kx 8 SUper Low Powe r and Low Voltage Full C M O S SRAM Data Sheets for 48-CSP R evision H isto ry RevNo. H Istorv D r a f t D a ta R em a r k


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    48-CSP PDF

    Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,


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    128Kx IDT71V024L T71V024L 576-bit 71V024 PDF

    3150Q

    Abstract: KM68FS1000
    Contextual Info: KM68FV1000, KM68FS1000, KM68FR1000 Family CMOS SRAM Document Title 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft March 15th 1996 Advance 0.1 Revise - Erase 100ns from KM 68FS1000 Family


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    KM68FV1000, KM68FS1000, KM68FR1000 100ns KM68FS1000 150ns 32-sTSOP1 100ns) 3150Q PDF

    Contextual Info: LOW POWER 2V CMOS SRAM 1 MEG 64Kx 16-BIT ADVANCE INFORMATION IDT71T016 FEATURES: DESCRIPTION: • 64K x 16 Organization • Wide Operating Voltage Range: 1.8 to 2.7V • Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options • Speed Grades: 150ns, 200ns


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    16-BIT) IDT71T016 150ns, 200ns 44-pin IDT71T016 576-bit Q277t PDF

    Contextual Info: P re lim in a ry K M 6 8 F S 1 OOOZ, K M 6 8 F R 1 0 0 0 Z F a m i l y CMOS SRAM Documerat Title 12 8K x8 Super Low Powe r and Low Voltage Full C M O S SRAM Data Sheets for 48-CSP Revision History R e v . N o. H Istorv Draft Data R em ark Rev. 0.0 -1 's t edition


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    48-CSP 18rth, PDF

    Contextual Info: KM68FV1000, KM68FS1000, KM68FR1000 Family CMOS SRAM Document Title 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial draft March 15,1996 Advance 0.1 Revise - Erase 100ns from KM68FS1000 Family


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    KM68FV1000, KM68FS1000, KM68FR1000 100ns KM68FS1000 68FS1000 32-sTSOP1 100ns) PDF

    3771 8 pin ic

    Abstract: 3771 ic 8 pin 8 pin ic 3771 3771 1A7A1 3771- IC
    Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71V016L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V016L is a 1,048,576-bit very low-pow er Static RAM organized as 64K x 16. It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,


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    16-BIT) IDT71V016L 100ns 44-pin 576-bit 71V016 400-mil 3771 8 pin ic 3771 ic 8 pin 8 pin ic 3771 3771 1A7A1 3771- IC PDF

    SANYO sh2a027-1

    Abstract: 3116-SIP12S ic 4040 MPP36S SIP14H 3047a 3151-QIP100E 3149-DIP48S 3037A-DIP20H 3029A-DIP28S
    Contextual Info: PACKAGE DIMENSIO Package dimensions for all o f Sanyo's semicondustor devices are provided below. Dimensions are all given in millimeters and those which are not specified as min or max are typical values. Unit: mm 10.9 Package marking is not provided. Refer to the transistor ca ta lo g for electrical connection and lead


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    004A-DIP14TK 010A-DIP22 005A-DIP14T 011A-DIP24 3000B-NP 3006B- T0126 SC-43 T0220M T03PB SANYO sh2a027-1 3116-SIP12S ic 4040 MPP36S SIP14H 3047a 3151-QIP100E 3149-DIP48S 3037A-DIP20H 3029A-DIP28S PDF

    land pattern for TSOP 2 44 PIN

    Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,


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    128Kx IDT71V024L 100ns 32-pin T71V024L 576-bit 10-338-207Q land pattern for TSOP 2 44 PIN PDF

    woy transistor

    Contextual Info: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,


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    128KX IDT71T024L 150ns, 200ns 32-pin IDT71T024L 576-bit 10-338-207Q woy transistor PDF

    KM616FS2000TI-12

    Contextual Info: KM616FV2000, KM616FS2000, KM616FR2000 Family CMOS SRAM 128Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology: Q.4nm Full CMOS • Organization: 128Kx16 • Power Supply Voltage KM616FV2000 Family : 3.0V - 3,6V


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    KM616FV2000, KM616FS2000, KM616FR2000 128Kx16 KM616FV2000 KM616FS2000 44-TSQP2-400F 128Kx16 KM616FV200Q, KM616FS2000TI-12 PDF