3150U Search Results

B212A

Abstract: B201B 3200em 3150U B-201B 3100u B209 B-209
Contextual Info: XXXXXXX Series* 3100 3106 3150 3600 3601 3800 3000 3001 3004 3100U 3106U 3150U XXXX XXXX Customer-Specific Features Temperatures Tolerances Differentials Contacts Epoxy Leads 3100UX 3106UX 3150UX Terminal/Bracket Configuration 3001U Approvals* U = UL and CSA

Contextual Info: Provisional Data Sheet No. PD-9.1432 International IQ R Rectifier \ dv/dt R A T E D HEXFET* TRANSISTOR R E P E T IT IV E A V A L A N C H E A N D IRHNA7264SE N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.1100, (SEE) RAD HARD HEXFET

Contextual Info: PD-2.474 bïtemational [torjRectifier HFA75MC40C Ultrafast, Soft Recovéry Diode HEXFRED Features V r = 400V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V f = 1.3V Qrr * = 500nC ANODE COMMON ANODE

ohs hall effect

Abstract: circuit diagram of hall effect hall magnetic field current sensor linear hall effect sensors Hall-Effect-Sensor OHN3150U OHN3151U OHS3150U OHS3151U QHN3150U
Contextual Info: 0.OPIEK Product Bulletin OHN3506/3507 August 1996 Ratiometric Linear Hall Effect Sensor Types 3150U, OHN3151U, 3150U, OHS3151U .1 8 2 4 .6 2 .0 2 5 .0 4 5 PACKAGE CENTER .0 6 1 ( 1 .5 5 ) .0 5 9 ( 1 .5 0 ) ( 0 .7 6 ) .0 2 (0 .5 1 ) L .0 1 5 ( 0 . 3 8 )

Contextual Info: Ratiometric Linear Hall-effect Sensor 3150U Features: • • • • • Ratiometric linear output capable of sinking and sourcing current 4.5 V to 6.0 V operation Responds equally to positive and negative magnetic fields Excellent temperature stability to operate in harsh environments

Contextual Info: International S Rectifier PD - 2.271 A 85CNQ015 SCHOTTKY RECTIFIER 80Amp Major Ratings and Characteristics Characteristics Desciption/Features The 85CNQ015 center tap Schottky rectifier module has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology

Contextual Info: PD-2.447 International SRectifier HFA140NH60 Ultrafast, Soft Recovfery Diode HEXFRED" LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V R = 600V ? T V f = 1.6V Q rr* = 1 4 0 0 n C

"Linear Hall-effect Sensor"

Abstract: Ratiometric Linear Hall-Effect Sensor halleffect 105 magnetic door sensor OHS3151U 3150U
Contextual Info: Ratiometric Linear Hall-effect Sensor 3150U, OHN3151U, 3150U, OHS3151U Features: • • • • • Ratiometric linear output capable of sinking and sourcing current 4.5 V to 6.0 V operation Responds equally to positive and negative magnetic fields

Linear Hall-Effect Sensor

Abstract: "Linear Hall-effect Sensor" OHS3150U OHN3150U OHN3151U OHS3151U
Contextual Info: Ratiometric Linear Hall-effect Sensor 3150U, OHN3151U, 3150U, OHS3151U Features: • • • • • Ratiometric linear output capable of sinking and sourcing current 4.5 V to 6.0 V operation Responds equally to positive and negative magnetic fields

8 pin IC 4914

Abstract: tr39 ic 7642 TR81 TR-47 EM57300 tr48 TR85 TR44 TR90
Contextual Info: EASY SOUND - EM57000 SERIES TINY CONTROLLER-BASED SOUND PROCESSOR GENERAL DESCRIPTION EM57000 is a series of single chip Voice/Dual tone Melody/Dual tone Sound Effect synthesizer ICs. It contains one 4-bit input port provided for EM57100 and above , two 4-bit I/O ports and a tiny controller. User's

OHN3150U

Abstract: OHN3151U OHS3150U OHS3151U "Linear Hall-effect Sensor" Ratiometric Linear Hall-Effect Sensor
Contextual Info: Ratiometric Linear Hall-effect Sensor 3150U, OHN3151U, 3150U, OHS3151U Features: • • • • • Ratiometric linear output capable of sinking and sourcing current 4.5 V to 6.0 V operation Responds equally to positive and negative magnetic fields

hall sensor 41

Abstract: Hall-Effect-Sensor HALL-EF 41 OHS3150U OHS3151U circuit diagram of hall effect Hall Effect Sensors linear hall effect current sensor ohs hall effect 3150U
Contextual Info: Product Bulletin 3150U/3151U August 1999 Ratiometric Linear Hall Effect Sensor Types 3150U, OHS3151U Features Absolute Maximum Ratings • A ratiometric linear output capable of Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V

Contextual Info: International SRectifier PD 9.1381 IRFL4105 PRELIMINARY HEXFET Power MOSFET • • • • • • Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Vdss = 55 V ^D S o n - 0.045Q

Contextual Info: Provisional Data Sheet PD 9.679C International I R Rectifier irhn725o dv/dt RATED HEXFET TRANSISTOR IRHN8250 REPETITIVE AVALANCHE AND N-CHANNEL MEGA RAD HARD Product Summary 200 Volt, 0.1 On, MEGA RAD HARD HEXFET International Rectifier’s M EG A RAD HARD technology

hall sensor OH

Contextual Info: Product Bulletin OHN3506/3507 August 1996 Ratiometric Linear Hall Effect Sensor Types OHN315QU, OHN3151U, OHS315QU, OHS3151U — f- .025 0.6*' S IL V E R OR T IN P L Y I N G OVER .0 2 ( 0 . 5 1 h ' j[.0 1 DTE: THE Th£ THE 45* (0 .2 5 ) H ALL ELEMENT IS LOCATED .013* BENEATH

irfp064n

Contextual Info: International ^Rectifier P D 9 .1 3 8 3 IRFP064N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 5 5 V

Contextual Info: PD - 9.543C International I R Rectifier IRFPG50 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1000V ^DS on “ 2 -0 ^ lD = 6.1 A Description

M1533

Abstract: m1532 M1527 TA 1319 AP BYW31-50 BYW31-50U BYW31
Contextual Info: BYW31 SERIES T P HILIPS IN T E R N A T I O N A L 711DÖEb 5bE D 004157E - 3 - L H PHIN OOO ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery

BYW31

Contextual Info: BYW31 SERIES 2 _s_ T ~ 0 3 r J . 9 . PHILIPS INTERNATIONAL 7 1 1 Q Ö E b 0 0 4 1 S 7 2 OOO « P H I N SbE » ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery

10KF6

Abstract: IR2110 MOS-Gated Transistors IRFD9110 AN IR2110 IR 2110 IR2110 design
Contextual Info: International Hü] Rectifier D e sig n T ips DT 92-2A INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 HIGH CURRENT BUFFER FOR CONTROL IC S By Laszlo Kiraly INTRODUCTION capacitance of the conducting output transistor

Contextual Info: OPTEK Product Bulletin 3150U/3151U August 1999 Ratiometric Linear Hall Effect Sensor Types 3150U, OHS3151U A ratiometric linear output capable of sinking and sourcing current 4.5 V to 6.0 V operation Responds equally to positive and negative magnetic field

Contextual Info: International S Rectifier PD - 2.4 95 8 9 C N Q 1 50 SCHOTTKY RECTIFIER 80Amp Major Ratings and Characteristics Characteristics Descfption/Features The 89CNQ150 center tap Schottky rectifier module has been optimized for very low forward voltage drop, with

Contextual Info: International [re s ] Rectifier PD — IR L P 2 5 0 5 PRELIMINARY HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching

linear hall

Abstract: linear hall effect sensors Ratiometric Linear Hall-Effect Sensor OHN3150U OHN3151U OHN315QU OHS3150U OHS3151U QHS3150U ohs hall effect
Contextual Info: OPTEK Product Bulletin OHN3506/3507 August 1996 Ratiometric Linear Hall Effect Sensor Types OHN315QU, OHN3151U, 3150U, OHS3151U Features • A ratiometric linear output capable of sinking and sourcing current • 4.5 V to 6.0 V operation • Responds equally to positive and