317 MOSFET Search Results

SHD217302

Contextual Info: SENSITRON SEMICONDUCTOR SHD217302A TECHNICAL DATA DATA SHEET 317, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.16 Ohm, 14A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRF130 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

IRF130

Abstract: N Channel Mosfet 12W SHD217302A SHD217302
Contextual Info: SENSITRON SEMICONDUCTOR SHD217302A TECHNICAL DATA DATA SHEET 317, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.16 Ohm, 14A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRF130 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: l4 flS S l4S2 International H »] Rectifier 317 « IN R PD-9.641A IRFI820G HEXFET P ow er M O S F E T • • • • • D O lS lb b IN T E R N A T IO N A L R E C T IF IE R Isolated Package High Voltage Isolation^ 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm

317 MOSFET

Abstract: starter/generator D-68623
Contextual Info: FMM 200-004PL Advanced Technical Information ID25 = 200 A VDSS = 40 V Ω RDSon = 2.8 mΩ Trench Power MOSFET logic level gate control -Phaseleg Topologyin ISOPLUS i4-PACTM 3 T1 5 4 1 T2 1 2 5 Features Symbol Conditions VDSS TVJ = 25°C to TVJmax Maximum Ratings

317 MOSFET

Abstract: Control of Starter-generator starter/generator D-68623 Power MOSFET 30 A, 60 V, Logic Level POWER MOSFET Logic Level logic level low rdson
Contextual Info: FMM 140-004PL Advanced Technical Information ID25 = 140 A VDSS = 40 V Ω RDSon = 4.0 mΩ Trench Power MOSFET logic level gate control -Phaseleg Topologyin ISOPLUS i4-PACTM 3 T1 5 4 1 T2 1 2 5 Features Symbol Conditions VDSS TVJ = 25°C to TVJmax Maximum Ratings

9565A

Abstract: solar battery charger circuit D-68623 317 MOSFET
Contextual Info: FDM 100-0045SP Advanced Technical Information ID25 = 100 A VDSS = 55 V Ω RDSon = 5.7 mΩ Chopper with Trench Power MOSFET and Schottky Diode in ISOPLUS i4-PACTM 3 5 4 1 5 2 Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90

317 6 terminal diode

Contextual Info: APTM20DUM05 Dual common source MOSFET Power Module VDSS = 200V RDSon = 5mΩ Ω max @ Tj = 25°C ID = 317A @ Tc = 25°C Application • • • AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features • • • • S D2 Benefits

APT0502

Abstract: APT0601 APTM20DUM05G
Contextual Info: APTM20DUM05G Dual common source MOSFET Power Module D1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D2 Q1 VDSS = 200V RDSon = 5mΩ typ @ Tj = 25°C ID = 317A @ Tc = 25°C Q2 G1 G2 S1 S2 S G1 D1 S D2 Features

APTM20DUM05

Contextual Info: APTM20DUM05 Dual common source MOSFET Power Module VDSS = 200V RDSon = 5mW max @ Tj = 25°C ID = 317A @ Tc = 25°C Application • AC Switches · Switched Mode Power Supplies · Uninterruptible Power Supplies G1 D1 S D2 S1 Features · Power MOS 7 MOSFETs

APTM20AM05F

Contextual Info: APTM20AM05F Phase leg MOSFET Power Module VDSS = 200V RDSon = 5mW max @ Tj = 25°C ID = 317A @ Tc = 25°C Application • · · · Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features · · · G1 VBUS 0/VBUS

317 MOSFET

Abstract: automatic change over relays circuit diagram relay omron 5 pin ultrasonic cleaning driving circuit circuit diagram of touch sensitive alarm omron reed relay 750H ST-100S circuit of touch sensitive alarm
Contextual Info: Omron A5 Catalogue 2007 283-418 11/9/06 10:56 am Page 316 Technical Information – MOSFET Relays Text • Introduction New models and a wider range provide an array of solutions, meeting the needs of today’s high performance applications. Our new range of MOSFET relays, Type G3VM, set the benchmark

5318T

Contextual Info: EricssonInternal Limited Internal TABLE OF CONTENTS PRODUCT SPECIFICATION E Prepared also subject responsible if other MPM/BY/P Henrik Sundh Henrik (MPM/BY/P) Sundh Approved PMF 5000[Krister seriesLundberg] MPM/BY/M 1 (1) (3) No. Checked 1/1301 00152-EN/LZT146317

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP1N80E CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

5318T

Contextual Info: Limited Internal Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other MPM/BY/P Henrik Sundh Approved PMF 5000[Krister seriesLundberg] MPM/BY/M 1 (1) (3) No. Checked 1/1301 00152-EN/LZT146317 BMR 643Technical

transistor 2432

Contextual Info: APTM20SKM05 Buck chopper MOSFET Power Module VDSS = 200V RDSon = 5mΩ Ω max @ Tj = 25°C ID = 317A @ Tc = 25°C Application • • AC and DC motor control Switched Mode Power Supplies Features • • • • 0/VBUS OUT Benefits • • • • Outstanding performance at high frequency operation

Contextual Info: APTM20DAM05 Boost chopper MOSFET Power Module VDSS = 200V RDSon = 5mΩ Ω max @ Tj = 25°C ID = 317A @ Tc = 25°C Application • • • AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features • • • • OUT Benefits •

Contextual Info: T em ic SÌ4435DY S e m i c o n d u c t o r s P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) -30 r DS(on) ( ß ) I d (A) 0.02 @ VGS = -10 V ± 8 .0 0.035 @ V gs = -4 .5 V ± 6.0 o o o i n SO-8 rm Top View D D D D P-Channel M OSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

SSD95N03

Abstract: MosFET 95N03
Contextual Info: SSD95N03 96A , 30V , RDS ON 4mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) The SSD95N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide

Contextual Info: StrongIRFET™ IRFB7434PbF Applications l l l l l l l l l HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies

s63d

Contextual Info: _ SÌ4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMM ARY V d* ( V ) ftoSfOH) Id I* ) 0.014 @ VGs = -4.5 V ± 10 0.0200 e VGs = -2 .5 V ±8.8 -2 0 ÜJ S O -8 O j| “ It ill] D D D D P-Channel MOSFET A B S O L U T E M A X IM U M R A T IN G S (T fi

Contextual Info: IRLW/I540A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ b v dss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current : 10 HA Max. @ VDS= 100V

D80AK2

Abstract: D80AL2
Contextual Info: FUIT D80AK2,L2 0.45 AM PERES 60,100 VO LTS RDS ON = 2-4 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.

Contextual Info: APT8011JLL 800V 51A 0.110W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

Contextual Info: MOSFET MODULE PDM1102H Dual 110A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible TYPICAL APPLICATIONS