1815
Abstract: B39182-B4142-U410 B4142 C61157-A7-A67 GSM1800 GSM1900 GSM900
Text: SAW Components Data Sheet B4142 SAW Components B4142 1842,50 MHz Low-Loss Filter for Mobile Communication Data Sheet Ceramic Package DCC6C Features ● Low-loss RF filter for mobile telephone PCN sys- tem, receive path ● High selectivity ● Usable passband: 75 MHz
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B4142
B39182-B4142-U410
C61157-A7-A67
F61074-V8168-Z000
1815
B39182-B4142-U410
B4142
C61157-A7-A67
GSM1800
GSM1900
GSM900
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B39182-B4142-U410
Abstract: B4142 C61157-A7-A67
Text: SAW Components Data Sheet B4142 SAW Components B4142 1842,50 MHz Low-Loss Filter for Mobile Communication Data Sheet Ceramic package DCC6C Features ● Low-loss RF filter for mobile telephone PCN sys- tem, receive path ● High selectivity ● Usable passband: 75 MHz
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B4142
B39182-B4142-U410
C61157-A7-A67
F61074-V8088-Z000
D-81617
B39182-B4142-U410
B4142
C61157-A7-A67
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WindCap
Abstract: epcos dssp
Text: SAW Components SAW RF filter PCN Rx filter Series/type: Ordering code: B4142 B4142U410 Date: Version: Feb 26, 2009 2.0 *Appendix to Data sheet Specifications for extended temperature range EPCOS AG 2009. Reproduction, publication and dissemination of this data sheet, enclosures
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B4142
B39182B4142U410
WindCap
epcos dssp
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irf9610 samsung
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D • 7^b4142 0Q122bb SBQ « S M G K P-CHANNEL POWER MOSFETS IRF9610/9611 /9612/9613 FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance
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b4142
0Q122bb
IRF9610/9611
IRF9610
IRF9611
IRF9612
IRF9613
irf9610 samsung
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Untitled
Abstract: No abstract text available
Text: SAMSUNG E L E C T R O N IC S IN C 42E D B 7^b4142 QQ1Q173 4 • SNÛK CMOS DRAM KM41C4001 Ö w 5 4M X1 Bit CMOS Dynamic RAM with Nibble Mode ‘ FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001 is a high speed CMOS 4,194,304 bit X 1 Dynamic Random Access Memory,
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b4142
QQ1Q173
KM41C4001
KM41C4001
KM41C4001-
150ns-
100ns
180ns
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SOT23 marking sk
Abstract: KSC2715 Transistor marking SK marking sk sot-23 marking sk transistor
Text: SAMSUNG S EMI C O NDU CT OR 14ED1 INC KSC2715 ? c , b4142 OOO^S? 1 | f ' 3 i m NPN EPITAXIAL SILICO N TRANSISTOR FM RADIO AMP, MIX, CONV OSC, IF AMP SOT-23 • High Power Gain G pe=30dB ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol VcbO VcEO Vebo
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000L137
KSC2715
OT-23
T-31-15
SOT23 marking sk
Transistor marking SK
marking sk sot-23
marking sk transistor
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C1000B
Abstract: 3020C
Text: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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KM416C1000BT
16Bit
1Mx16
7Tb4142
DD3D23b
C1000B
3020C
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KM416C1200AJ
Abstract: ra57
Text: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification
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M5321200AW/AWG
KMM5321200AW/AWG
1Mx32
1Mx16
KMM5321200AW
42-pin
72-pin
KMM5321200AW
KM416C1200AJ
ra57
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4.19MHz crystal
Abstract: KS57C2504 B4MS
Text: KS57C2504 4-Bit CMOS Microcontroller ELECTRONICS Data Sheet DESCRIPTION The KS57C2504 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With up to 320-dot LCD direct-drive capability, 8-bit timer/counter, serial I/O, and comparator, the KS57C2504 offers an
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KS57C2504
KS57C2504
320-dot
0011B.
0000B.
1001B,
04ST7D
4.19MHz crystal
B4MS
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KM29N040T
Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
Text: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective
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KM29N040T
512Kx8
500us
400mil/0
KM29N040T
512Kx8bit
KM29N040
KM29N040T)
7TL4142
741 IC data sheet
bhrb
data sheet IC 741
KM29N04
samsung flash bad block mapping
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KM44C4004B
Abstract: No abstract text available
Text: KM44C4004BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44C4004B
KM44C4004BS
0034S12
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Untitled
Abstract: No abstract text available
Text: K M 4 16 C 2 5 6 D T CMOS D R A M ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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256Kx16
416C256DT
b4142
003055b
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Untitled
Abstract: No abstract text available
Text: KS7306 DIGITAL CAMERA PROCESSOR GENERAL DESCRIPTION KS7306 is a CCD digital signal processor. The electronic video signal that passed the color filter array CFA pattern of CCD is put to the process of dual correlation sampling and then converted to digital video signal by A/D converter.
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KS7306
KS7306
100-QFP-1414
25ZT1
03125Z
VID-97-D004
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gd243
Abstract: No abstract text available
Text: KM29N32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte
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KM29N32000TS/RS
250us
gd243
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Untitled
Abstract: No abstract text available
Text: KM44C4003BS CMOS DRAM ELECTRONICS 4 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time
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KM44C4003BS
D344bfl
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KM68V4000
Abstract: No abstract text available
Text: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The Process Technology : 0.4 um CMOS Organization : 512K x 8 Power Supply Voltage : 3.3 +/- 0.3V * Low Data Retention Voltage : 2V Min
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KM68V4000A
512Kx8
32-SOP,
32-TSOP
KM68V4000A
KM68V4000
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Untitled
Abstract: No abstract text available
Text: KS57C3016 ELECTRONICS Mi crocontroller DESCRIPTION The KS57C3016 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With its up to 16-digit LCD direct-drive capability, 4-channel A/D converter, 8-bit timer/counter, PLL frequency synthesizer, and
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KS57C3016
KS57C3016
16-digit
0000B
1001B
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Untitled
Abstract: No abstract text available
Text: KM416C1204A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: KM416C1204A-6/A-L6/A-F6 tRAC tCAC tRC tHPC 60ns 17ns 110ns 24ns KM416C1204A-7/A-L7/A-F7 70ns 20ns 130ns 29ns KM416C1204A-8/A-L8/A-F8
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KM416C1204A/A-L/A-F
KM416C1204A-6/A-L6/A-F6
110ns
KM416C1204A-7/A-L7/A-F7
130ns
KM416C1204A-8/A-L8/A-F8
150ns
cycle/16m
cycle/128msCLE
71b4142
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E 3 • 7 ^ 4 1 4 2 DDIBTTB TSG PRELIMINARY KM424C257 SMGK CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K x 4 b its RAM port 512 x 4 b its SAM port • Performance The Samsung KM 424C 257 is a CMOS 2 5 6 K X 4 bit Dual
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KM424C257
125ns
28-PIN
0D13625
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KM23C4001
Abstract: No abstract text available
Text: SAM SUN G E L E C T R O N I C S INC 42E El 7 clb m M B oonm o 5 QSNGK KM23C4001 CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM V ‘ ! ' 1 3 - 1 3 - / 5 FEATURES GENERAL DESCRIPTION • • • • The KM23C4001 is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using
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KM23C4001
512Kx8)
KM23C4001
288x8
150ns
32-pin,
600mll,
b4142
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Untitled
Abstract: No abstract text available
Text: CMOS DIGITAL INTEGRATED CIRCUIT KS0065 40-CHANNEL SEGMENT/COMMON DRIVER FOR DOT MATRIX LCD 60 QFP T h e K S 0 0 6 5 is a LC D d riv e r LSI w h ic h is fa b ric a te d b y lo w p o w e r C M O S te c h n o lo g y B a s c ia lly th is LSI c o n s is ts o t 2 0 X 2 b i t b id re c -
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KS0065
40-CHANNEL
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D KM416C1200L/LL • 7^4142 DDlbmO TG6 « S H C K CMOS DRAM 1 M x 1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1200L/LL is a CMOS high speed 1,048,576 b itx 1 6 D ynam ic Random A ccess Memory.
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KM416C1200L/LL
KM416C1200L/LL
KM416C1200L/LL-7
130ns
KM416C1200L/LL-8
KM416C1200LVLL-10
100ns
180ns
Dlb432
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Untitled
Abstract: No abstract text available
Text: KS58550 CMOS INTEGRATED CIRCUIT UNIVERSAL 10 MEMORY DIALER 22-DIP-400 The KS58550 is 10 memory Tone/pulse switchable dialer with 32 digit redial memory. The Flash time is selectable on the keyboard. Also, Hands Free and Hold function are controlled on the
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KS58550
22-DIP-400
KS58550
75KHz)
579545MHz
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Untitled
Abstract: No abstract text available
Text: KM44C4002A, KM44C4102A CMOS DRAM 4 M x 4 Bit CM O S Dynamic RAM with Static Column Mode DESCRIPTION T his is a fa m ily of 4 ,1 94 ,3 0 4 x 4 f i t Static C olum n M ode C M O S DRAM s. Static C olum n M ode offers high sp e e d random a cce ss of m em ory ce lls w ithin the sam e row. R efresh cycle 2 K Ref. o r 4 K R ef. , acce ss
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KM44C4002A,
KM44C4102A
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