31893TH Search Results

Contextual Info: 2SK1724 LD L o w D rive S eries 2062 V 0 ss —3 0 V N Channel Power M OSFET E.3BI9 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta = 25°C Drain to Source Voltage V d ss Gate to Source Voltage

8897

Contextual Info: 2SJ288 2062 LD L o w D rive S eries VDs s = 6 0 V P Channel Power M OSFET 4308 F e a tu re s •Low ON resistance. • Very high-speed switching. - Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage Vdss G ate to Source Voltage

EN4309

Abstract: 2SJ316
Contextual Info: Ordering number:EN4309 P-Channel Silicon MOSFET 2SJ316 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ316] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max

2SK1724

Abstract: IT 7831
Contextual Info: Ordering number:EN3819 N-Channel Silicon MOSFET 2SK1724 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1724] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max

2SK1724

Contextual Info: Ordering number: EN3819 _ 2SK1724 No.3819 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures • Low ON resistance. - Very high-speed switching. • Low-voltage drive. A bsolute Maximum Ratings atT a = 25°C Drain to Source Voltage

2SJ316

Abstract: VDS101
Contextual Info: Ordering number: EN 4309 2SJ316 No.4309 P-Channel MOS Silicon FET SAMYO Very High-Speed Switching Applications i Features • Low ON resistance. •Very high-speed switching. • Low-voltage drive. A bsolute Maximum Ratings at Ta = 25°C Drain to Source Voltage

mosfet 7840

Abstract: EN3821 2SK1726
Contextual Info: Ordering number:EN3821 N-Channel Silicon MOSFET 2SK1726 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1726] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max

2SJ288

Contextual Info: Ordering number:EN4308 P-Channel Silicon MOSFET 2SJ288 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ288] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max

TF DKL

Abstract: 2SJ288 marking JE FET g1id
Contextual Info: Ordering number : EN 430 8 2SJ288 No.4308 P-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A b s o lu te M ax im u m R a tin g s at Ta = 25°C D rain to Source Voltage

2SJ288

Abstract: marking JE
Contextual Info: Ordering number:EN4308 P-Channel Silicon MOSFET 2SJ288 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ288] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max

Contextual Info: Ordering number:EN4309 P-Channel Silicon MOSFET 2SJ316 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ316] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max

Contextual Info: 2SJ316 2062 LD L o w D rive S eries V DSs := 1 2 V P Channel Power M OSFET F e a tu re s •Low O N resistance. • Very high-speed switching. • Low-voltage drive. A b s o l u t e M a x i m u m R a t i n g s a t T a = 25°C D rain to Source Voltage V DSS

2SK1726

Contextual Info: Ordering number: EN3821 _ 2SK1726 N-Channel MOS Silicon FET No.3821 SA\YO Very High-Speed Switching Applications i Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. Absolute Maximum Ratings atTa = 25°C Drain to Source Voltage

2SK1726

Abstract: mosfet 7840
Contextual Info: Ordering number:EN3821 N-Channel Silicon MOSFET 2SK1726 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1726] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max

lm 7840

Abstract: ic MA 7840 A8-7840
Contextual Info: 2SK1726 4£ 2062 LD L o w D rive S eries V Dss = 6 0 V N Channel Power M OSFET '1 3 8 2 1 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage