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    3299 TRANSISTOR Search Results

    3299 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3299 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZTX853

    Abstract: C 3298 TRANSISTOR
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3- NOVEMBER H 1995 FEATURES 100volt VCE , * * 4 Amps * Up to 10 Amps + * Very continuous low Pt[ t=l.2 current peak current saturation voltage Watts E-Line 1092 Compatible ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF ZTX853 ZTX853 C 3298 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX853 ISSUE 3 - NOVEMBER 1995 FEATURES * 100 Volt VCEO * 4 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Ptot=1.2 Watts C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF ZTX853 100ms

    ZTX853

    Abstract: DSA003778
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX853 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 830 950 V IC=4A, VCE=2V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio


    Original     		PDF ZTX853 100mA, 50MHz 100mA 100ms ZTX853 DSA003778

    MPS-H20

    Abstract: npn, transistor, sc 107 b MV400 3 w RF POWER TRANSISTOR NPN
    Text: MPSH20 / MMBTH20 MPSH20 MMBTH20 C C B E TO-92 B SOT-23 E Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*


    Original     		PDF MPSH20 MMBTH20 MPSH20 OT-23 MPS-H20 npn, transistor, sc 107 b MV400 3 w RF POWER TRANSISTOR NPN

    2N3551

    Abstract: SOLITRON Solitron Transistor
    Text: 836_86S2_SQLITR0N D E V I C E S ^ O litr o n S P E C IN q ” ^ DE ^03bflbD5 00012flfl 0 /93^3299 E b P C iù £ : J W S V A 3 8 V 4 NO.: c 2 N 3 3 # 9 TY PE: rfP A f g JltoO floW &Z C A SE: TO - 4 3 D e v ic e s , In c. I F I C A T I O N S F S - a c d Z P & } ') ’> '?


    OCR Scan     		PDF JN33V9 2B38V7, 2N3551 SOLITRON Solitron Transistor

    IC 4047

    Abstract: N2219 ic 4046 bsw830 BSW82 N 2222 N2222A BSW83 2N3301 2N3302
    Text: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 5C 0mA) in TO-18 and TO-39 (~ T O - 5 ) metal cases for high speed switching Type Characteristics @ Tam b= 25°C Maximum Ratings f" l„ Tam b— ff 2 5 °C Tease— V CE = 10 V = 10 mA


    OCR Scan     		PDF BSW83 2N3301 2N3302 IC 4047 N2219 ic 4046 bsw830 BSW82 N 2222 N2222A 2N3301 2N3302

    2N4034

    Abstract: 2N3504
    Text: JEDEC TRANSISTORS continued a. >1- S' > o LÜ O > a t/t e X «O e < _u LU > X SO C E < e o X (O £ +r-e • lA Ui ÜJ I< oc O Ü. o > ÍT a. X ta £ o o n o o o ir> C-vl IIra h- @ PACKAGE P O L A R IT Y LU fT min (MHz) High speed saturated switches f B ü


    OCR Scan     		PDF T0-18 1TO-18 40/12CI 2N4034 2N3504

    4033

    Abstract: 2N4033 2n4027
    Text: continued >cc < —1 o a. <3 w JJ a LU 1— < a: X to -Ü E > < E _o UJ lL _c X CU E A3 UJ o > U_ a. <Xo E o o n (continued) o ID CM II I - PACKAGE TYPE General purpose amplifiers and switches fT min (MHz) JEDEC TRANSISTORS @ 5 E ü a. 2N 3251 PNP 40 100/300


    OCR Scan     		PDF T0-18 40/12CI 4033 2N4033 2n4027

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 •NOVEMBER 1995_ FEATURES * 100 V olt VCE0 * 4 Am ps continuous current * * Up to 10 Am ps peak current Very low saturation voltage * Ptot=1.2 W atts ABSOLUTE MAXIMUM RATINGS.


    OCR Scan     		PDF 100mA, 50MHz 100mA r100mA, GD1D211 ZTX853

    ZTX853

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 2 -A U G U S T 94_ FEATURES * 100 V o lt VCE0 * 4 A m ps continuous current * Up to 10 Am ps peak current * Very lo w saturation voltage Ptot=1,2 W atts ABSOLUTE MAXIMUM RATINGS.


    OCR Scan     		PDF Tamb-25Â ZTX853

    2n4036

    Abstract: star delta connection circuit diagrams 2N3134 2N3135 2N3136 2N3250 2N3250A 2N3251A 2N3299 2N3300
    Text: Transistors Cont. Discrete Devices Medium Current, High-Speed Amplifiers (Cont.) Maxim um Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C V c b VCE V e b Volts Volts Volts V C E (Sat) lc /l„ H f e @ >C Min/Max mA Volts m A/m A


    OCR Scan     		PDF 2N3134 2N3135 2N3136 2N3250 2N3250A 2M3251 2N3251A 2N3486 2N3486A 2N3502 2n4036 star delta connection circuit diagrams 2N3299 2N3300

    2N918

    Abstract: 2N4033
    Text: continued >cc <—1 oa. w0 JJ aLU 1— <a: <3 X to -Ü E < E _o UJ _clL > CU E A3 UoJ > X U_a. X <o E no o0 (continued) o0 ID CM II @ 5 I - PACKAG E TYPE General purpose amplifiers and switches f T min (MHz) JEDEC TRANSISTORS E a.ü 2N 3251 PNP 40 100/300


    OCR Scan     		PDF T0-18 2N918 2N4033

    transistor 3504 npn

    Abstract: 026 pnp
    Text: JEDEC TRANSISTORS continued a. >1- S' > o LÜ O > a t/t e X «O e < _u LU > X SO C E X < e o (O £ +r-e • lA Ui ÜJ I< oc O Ü. o > ÍT a. X ta £ o o n o o o ir> C-vl II ra h- @ PACKAGE P O L A R IT Y LU fT min (MHz) High speed saturated switches f B


    OCR Scan     		PDF T0-18 T0-39 T0-39 transistor 3504 npn 026 pnp

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 - NOVEM BER 1995 FEATURES * 100 V o lt VCE0 * 4 A m p s c o n tin u o u s c u rre n t * U p to 10 A m p s peak c u rre n t * V ery lo w s a tu ra tio n v o lta g e * Ptot=1.2 W a tts ABSOLUTE M AXIM UM RATINGS.


    OCR Scan     		PDF 100mA 100mA, 300ns. ZTX853

    2N3930

    Abstract: 2N4033
    Text: continued >cc <—1 oa . w JJ aLU 1— <a: <3 X to -Ü E < E _o UJ _clL > X CU E A3 UJ o > U_ a. X <o E o n o0 (continued) o0 ID CM II I@ 5 PACKAGE TYPE General purpose amplifiers and switches fT min (MHz) JEDEC TRANSISTORS E a.ü 2N 3251 PNP 40 100/300


    OCR Scan     		PDF T0-18 2N3930 2N4033

    8080 databook

    Abstract: No abstract text available
    Text: NSCl National Semiconductor January 1994 74LVX 14 Low V o ltage Hex In verter w ith Schm itt T rig g er Input General Description Features The 'LVX14 contains six inverter gates each with a Schmitt trigger input. They are capable of transforming slowly changing input signals into sharply defined, jitter-free output


    OCR Scan     		PDF 74LVX14 LVX14 8080 databook

    2219a

    Abstract: 2218A 2n h 2222a cc 3053 2N4047 npn 2907A transistor 2N 2297 transistor 3504 npn 2222 NPN
    Text: JEDEC TRANSISTORS continued > o LÜ O > a LU I< oc t/t e X «O e < _u o X SO C E ÜJ Ü. S' < e o > X (O £ +r-e • lA Ui O > ÍT a. X ta £ o o n o o o ir> C-vl II ra h- @ PACKAGE P O L A R IT Y LU a. >1- fT min (MHz) High speed saturated switches f B


    OCR Scan     		PDF T0-18 2219a 2218A 2n h 2222a cc 3053 2N4047 npn 2907A transistor 2N 2297 transistor 3504 npn 2222 NPN

    V9390

    Abstract: No abstract text available
    Text: MOTOROLA SC 12E 0 I X ST RS /R F b3b?2SM OGflbSlO CV10440 | , CECC 50004-087 CASE 22-03, STYLE 1 TO-18 (TO-206AA) MAXIM UM RATINGS Sym bol Rating . Value Unit Collector-Emitter Voltage VCEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage v ebo


    OCR Scan     		PDF CV10440 O-206AA) 47fif V9390

    2N3134

    Abstract: 2N3135 2N3136 2N3250 2N3250A 2N3251A 2N3299 2N3300 2N3302 BT2907A
    Text: Transistors Cont. Discrete Devices Medium Current, High-Speed Amplifiers (Cont.) Maxim um Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C V c b VCE V e b Volts Volts Volts V C E (Sat) lc /l„ H f e @ >C Min/Max mA Volts m A/m A


    OCR Scan     		PDF 2N3134 2N3135 2N3136 2N3250 2N3250A 2M3251 2N3251A BT2946 2N2946 BT3999 2N3299 2N3300 2N3302 BT2907A

    8N35

    Abstract: 72SM AN569 MTH8N35 MTH8N40 MTM8N35 MTM8N40 TMOS 8IM40 MTH8
    Text: MOTOROLA SC IM E D I XST R S/R F t.3b?aS4 OOfiTötiM 4 | MOTOROLA m SEMICONDUCTOR TECHNICAL DATA MTH8INI35 MTH8N40 MTM8N35 MTM8N40 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS Th ese TM O S Pow er FE T s are designed for high voltage, high


    OCR Scan     		PDF b3b72S4 MTH8N35 MTH8N40 MTM8N35 MTM8N40 O-29UA O-218AC YI4SH1962. 8N35 72SM AN569 MTM8N40 TMOS 8IM40 MTH8

    LH0005H

    Abstract: operational amplifier discrete schematic FT2010 LH0005 LH0005A LH0006
    Text: National Semiconductor Operational Amplifiers/Buffers LH0005/LH0005A Operational Amplifier General Description The LH 0005/LH 0005A is a hybrid integrated cir­ cuit operational am pfifier employing thick film resistors and discrete silicon semiconductors in its


    OCR Scan     		PDF LH0005/LH0005A LH0005H operational amplifier discrete schematic FT2010 LH0005 LH0005A LH0006

    558z

    Abstract: se130 221A-06 221D BUL44 BUL44F
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet B U L 44* BUL44F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘Motorola Preferred Device POWER TRANSISTOR 2.0 AM PERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state-of-the-art die designed


    OCR Scan     		PDF BUL44/BUL44F O-220 T0-220 BUL44F, AN1040. 558z se130 221A-06 221D BUL44 BUL44F

    IRF 3302

    Abstract: 2sc 1894 IRFF430 IRFF431 IRFF432 IRFF433 irf 430
    Text: -Standard Power MOSFETs File Number IRFF430, IRFF431, IRFF432, IRFF433 1894 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.25A and 2.75A, 450V - 500V rDsioni = 1.50 and 2.00 N-CHANNEL ENHANCEMENT MODE 3 D Features: • SOA is power-dissipation limited


    OCR Scan     		PDF IRFF430, IRFF431, IRFF432, IRFF433 92CS-3374I IRFF432 IRFF433 IRF 3302 2sc 1894 IRFF430 IRFF431 irf 430

    MTPBP10

    Abstract: UL-44 l44 transistor transistor L44
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L44 * BU L44F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Pf*f*cr#d Dtvtc* POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state-of-the-art die designed


    OCR Scan     		PDF BUL44/BUL44F MTPBP10 UL-44 l44 transistor transistor L44