329U Search Results

329UZ

Abstract: ISL22329 ISL22329UFU10Z ISL22329WFU10Z MO-187BA TB379
Contextual Info: ISL22329 Dual Digitally Controlled Potentiometers XDCP Data Sheet September 26, 2006 Low Noise, Low Power, I2C® Bus, 128 Taps, Wiper Only Features The ISL22329 integrates two digitally controlled potentiometers (DCP) and non-volatile memory on a monolithic CMOS integrated circuit.

329uz

Abstract: PART MARKING 118 INTERSIL ISL22329 ISL22329UFU10Z ISL22329WFU10Z TB347 TB379 329WZ
Contextual Info: ISL22329 Dual Digitally Controlled Potentiometers XDCP Data Sheet September 4, 2009 Low Noise, Low Power, I2C™ Bus, 128 Taps, Wiper Only Features The ISL22329 integrates two digitally controlled potentiometers (DCP) and non-volatile memory on a monolithic CMOS integrated circuit.

Contextual Info: T UCT ROD RODUC P E P T E E L O UTDual Digitally Controlled Potentiometers OBS UBSTIT 6 2 S 3 E 2 ISL2 SI B L September 4, 2009 POS Data Sheet ISL22329 Low Noise, Low Power, I2C Bus, 128 Taps, Wiper Only Features The ISL22329 integrates two digitally controlled

329UZ

Abstract: ISL22329 ISL22329UFU10Z ISL22329WFU10Z MO-187BA TB379
Contextual Info: ISL22329 Dual Digitally Controlled Potentiometers XDCP Data Sheet July 28, 2006 Low Noise, Low Power, I2C® Bus, 128 Taps, Wiper Only Features The ISL22329 integrates two digitally controlled potentiometers (DCP) and non-volatile memory on a monolithic CMOS integrated circuit.

2G417

Abstract: 2SB135 TK27A 2sb115 AFY15 OC3H TI-363 324T1 TK21A 2N199
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. CROSS-IND EX & T EC H N IC A L SEC T IO N S A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol

FE 1.1s

Contextual Info: CY2147 CYPRESS SEMICONDUCTOR Features F unctional D escrip tion • A utom atic pow er-dow n w hen d e s e ­ lected T h e C Y 2 1 4 7 is a h ig h -p e r f o r m a n c c C M O S s ta tic R A M o rg a n iz e d as 4 0 9 6 by 1 bit. E asy m e m o ry e x p a n s io n is p ro v id e d b y a n activ e

germanium transistor asy

Abstract: TK27A 2G417 TK27 0C71N A14P 2N2093 2SC621 TI363 TK21A
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S - IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type number non-JED EC whose characteristics are not the same. i This manufacturer-identifying symbol

4FF6D

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF200R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $32 %F32 &132214DDDC 32 3F3264C3

329u

Contextual Info: CY7C167A CYPRESS SEMICONDUCTOR 16,384 x 1 Static RAM Functional Description Features Automatic power-down when dese­ lected CMOS for optimum speed/power High speed — 15 ns Low active power — 275 mW Low standby power — 83 mW TTL-compatible inputs and outputs

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES