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    32KX8 Search Results

    32KX8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27C256-120DC Rochester Electronics LLC UVPROM, 32KX8, 120ns, CMOS, CDIP28, DIP-28 Visit Rochester Electronics LLC Buy
    X28HC256DM-12/B Rochester Electronics LLC X28HC256 - EEPROM, 32KX8, 5V, Parallel Visit Rochester Electronics LLC Buy
    AM27C256-120DIB Rochester Electronics LLC UVPROM, 32KX8, 120ns, CMOS, CDIP28, DIP-28 Visit Rochester Electronics LLC Buy
    AM27C256-120DI Rochester Electronics LLC UVPROM, 32KX8, 120ns, CMOS, CDIP28, DIP-28 Visit Rochester Electronics LLC Buy
    MD27C256-25/B Rochester Electronics LLC UVPROM, 32KX8, 250ns, CMOS, CQCC32, CERAMIC, JLCC-32 Visit Rochester Electronics LLC Buy
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    32KX8 Price and Stock

    Vishay Vitramon HV3640Y332KX8ATHV

    CAP CER 3.3 NF 8KV X7R 3640
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    DigiKey HV3640Y332KX8ATHV Reel 350
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    HV3640Y332KX8ATHV Digi-Reel 1
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    • 100 $9.0753
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    HV3640Y332KX8ATHV Cut Tape 1
    • 1 $15.84
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    Vishay Intertechnologies HV3640Y332KX8ATHV

    Multilayer Ceramic Capacitors MLCC - SMD/SMT HV3640Y332KX8ATHV
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    Mouser Electronics HV3640Y332KX8ATHV
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    AT&T 32KX8-12DIP

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    Bristol Electronics 32KX8-12DIP 378
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    AT&T 32KX812

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    Bristol Electronics 32KX812 378
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    Cypress Semiconductor 32KX8-25SOJ

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    Bristol Electronics 32KX8-25SOJ 43
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    Find more 32KX8 price and stock on Findchips.com

    32KX8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    EM033C08

    Abstract: EM033C08N EM02R2
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM033C08 EM033C08 Low Power 32Kx8 SRAM Overview Features The EM033C08 is an integrated memory device containing a low power 256 Kbit Static Random


    Original     		PDF EM033C08 32Kx8 EM033C08 EM02R2XX EM033C08N EM033C08N EM02R2

    K6X0808T1D

    Abstract: K6X0808T1D-B K6X0808T1D-F K6X0808T1D-Q K6X0808T1D-NF70
    Text: K6X0808T1D Family CMOS SRAM Document Title 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft October 09, 2002 Preliminary 0.1 revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type November 08, 2002


    Original     		PDF K6X0808T1D 32Kx8 28-SOP-525 28-SOP-450 K6X0808T1D-F K6X0808T1D-Q K6X0808T1D-B K6X0808T1D-NF70

    GDX-1C/A CRYSTAL 6PF

    Abstract: FM3808 FM3808DK FM1808 footprint dip 16 gold cap
    Text: Product Preview FM3808DK FM3808 Development Kit Features • • • • • • 32Kx8 FRAM with self-contained on-board real-time clock Convenient 32-pin DIP platform for developing with FM3808 Provides 28-pin “memory-only” footprint for easy software development


    Original     		PDF FM3808DK FM3808 32Kx8 32-pin FM3808 28-pin FM3808DK GDX-1C/A CRYSTAL 6PF FM1808 footprint dip 16 gold cap

    ES62UL256

    Abstract: ES62UL256-25SC ES62UL256-25TC ES62UL256-45SC ES62UL256-45TC
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com ES62UXX256 Family ES62UL256 Family 32Kx8 Bit Ultra-Low Power Asynchronous Static RAM Overview The ES62UXX256 is an integrated memory device containing a low power 256 Kbit Static Random


    Original     		PDF ES62UXX256 ES62UL256 32Kx8 ES62UL256-45TC ES62UL256-45SC ES62UL256-25TC ES62UL256-25SC ES62UL256-25SC ES62UL256-25TC ES62UL256-45SC ES62UL256-45TC

    bq4011

    Abstract: BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N benchmarq BQ4011YMA-70
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N benchmarq BQ4011YMA-70

    EM032L08

    Abstract: EM032L08T
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM032L08 EM032L08 Family 32Kx8 Bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM032L08 is an integrated memory device containing a low power 256 Kbit Static Random


    Original     		PDF EM032L08 EM032L08 32Kx8 EM032L08T

    HY62WT08081E-DGC

    Abstract: HY62WT08081E HY62WT08081E-DGE HY62WT08081E-DGI HY62WT08081E-DPC HY62WT08081E-DPE HY62WT08081E-DPI
    Text: HY62WT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~5.5V Low Power Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Feb.05.2001 Preliminary 01 Revised - Change LL-Part Isb1 Limit @E.T/I.T, 4.5~5.5V : 15uA => 20uA


    Original     		PDF HY62WT08081E 32Kx8bit HY62WT08081E HY62WT08081E-DGC HY62WT08081E-DGE HY62WT08081E-DGI HY62WT08081E-DPC HY62WT08081E-DPE HY62WT08081E-DPI

    KM68V257CP15

    Abstract: KM68V257CP-15 KM68V257CJ-15 KM68V257CP-17 KM68V257C KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CJ-17 KM68V257CP20
    Text: KM68V257C CMOS SRAM 32Kx8 Bit High Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 30 mA (Max.) (CMOS) : 100 |iA (Max.) Operating KM68V257C-15 : 90 mA (Max.)


    OCR Scan     		PDF KM68V257C 32Kx8 KM68V257C-15 KM68V257C-17 KM68V257C-20 KM68V257CP 28-DIP-300 KM68V257CJ 28-SOJ-300 KM68V257C KM68V257CP15 KM68V257CP-15 KM68V257CJ-15 KM68V257CP-17 KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CJ-17 KM68V257CP20

    KM68B261A-6

    Abstract: KM68B261A-7 KM68B261A-8 Static Random Access Memory
    Text: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TT L): 110 mA (Max.) (CMO S): 20 mA (Max.) Operating Current: 170 mA (f=100MHz) • Single 5V±5%T>ower Supply


    OCR Scan     		PDF KM68B261A 32Kx8 100MHz) KM68B261AJ SOJ-300 KM68B261A 144-bit 0D237Sb KM68B261A-6 KM68B261A-7 KM68B261A-8 Static Random Access Memory

    KM62256C

    Abstract: KM62256CL km62256cls KM62256CL-7
    Text: CMOS SRAM KM62256CL / CL-L 32Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • F a st A cce ss T im e : 55, 7 0 n s M ax. ■ Low P o w e r D issip a tio n S ta n d b y (C M O S ): 5 5 0 |iW (m a x.) L V e rsio n 1 1 0 |iW (m a x.) LL V e rsio n


    OCR Scan     		PDF KM62256CL 32Kx8 385mW KM62256CLP/CLP-L 28-pin KM62256CLG/CLG-L KM62256CLTG/CLTG-L KM62256CLRG/CLRG-L KM62256C km62256cls KM62256CL-7

    Untitled

    Abstract: No abstract text available
    Text: 32Kx8 3.3V SRAM AS7C3256 Logic Block Diagram Features ♦ High Performance CMOS: tAA=10-25 ns ♦ Fast OE access: t0 E=3-6 ns ♦ Very low power - 216 m W @ 100 M H z - 3.6 m W @ 10 M H z standby - 1.1 mW @ • I/07 10 M H z standby: L version ♦ Automatic CE power down


    OCR Scan     		PDF 32Kx8 AS7C3256 AS7C3256 7C3256-10 7C3256-12 7C3256-15 7C3256-20 7C3256-25

    Untitled

    Abstract: No abstract text available
    Text: HY62C256 HYUNDAI S EM IC O N D U C TO R 32KX8-KC CMOS SRAM M 231202B-APR91 FEATURES DESCRIPTION • High speed— 85/100/120/150 ns m ax. The HY62C256 is a high speed low power, 32,768 words by 8-bit CM OS static RAM fabri­ cated using HYUNDAI’S high performance


    OCR Scan     		PDF HY62C256 32KX8-KC 231202B-APR91 HY62C256

    static ram 64kx8

    Abstract: No abstract text available
    Text: m o EDI8M864C90/100/120/150 i High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM based on two 32Kx8 Static RAMs in leadless chip carriers mounted on a multi-layered ceramic substrate. The EDI8M864C has an on-board decoder circuit that


    OCR Scan     		PDF EDI8M864C90/100/120/150 64Kx8 EDI8M864C 32Kx8 MIL-STD-883C, EDI8M864C90/100/120/150 static ram 64kx8

    Untitled

    Abstract: No abstract text available
    Text: EDI8832C E lectronic Declgn« In c.« High Performance 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic Features 1.2. 1. 32Kx8 bit CMOS Static Random Access Memory • Access Times 70,85,100,120 and 150ns • Data Retention Function EDI8832LP only


    OCR Scan     		PDF EDI8832C 32Kx8 150ns EDI8832LP EDI8832C 144bit 32Kx8. EDI8832C) EDI8832LP70LB

    Untitled

    Abstract: No abstract text available
    Text: M Dl EDI8833C/LP/P High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS;Monolithic Features The EDI8833C/LP/P is a high speed, high perform­ ance, low power CMOS Static RAM organized as 32,768 words by 8 bits each. Inputs and three-state outputs are TTL compatible and


    OCR Scan     		PDF EDI8833C/LP/P 32Kx8 EDI8833C/LP/P 768x8 EDI8833LP55CB EDI8833LP35LB ED18833LP45LB EDI8833LP55LB EDI8833LP35FB EDI8833LP45FB

    Untitled

    Abstract: No abstract text available
    Text: •B i y m 32KX8 moiaic SRAM MSM832-25/35/45/55/70 Issue 1.0 : June 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c t o r Inc. ^Pin Definition 32,768 x 8 CMOS High Speed Static RAM A14 A12 A7 A6 A5 A4 A3 A2 A1 AO DO D1 D2 GND Features Access Times of 35/45/55/70 ns 25 ns in development


    OCR Scan     		PDF 32KX8 MSM832-25/35/45/55/70 MIL-STD-883D,

    Untitled

    Abstract: No abstract text available
    Text: %EDl EDI8M1664C50/60/70/85/100 Megabit SRAM Module, JEDEC Pinout 64Kx16 Static RAM CMOS, Module Features The EDI8M1664C is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static RAMs in leadless chip carriers, surface mounted onto a


    OCR Scan     		PDF EDI8M1664C50/60/70/85/100 64Kx16 EDI8M1664C 32Kx8 32Kx16bitseach. DQ8-DQ15) EDI8M81664C EDI8U1664C50/60/70/85/100

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin 10-year bq4011YMA-150N bq4011

    Untitled

    Abstract: No abstract text available
    Text: Advance Information Addendum b BENCHMARQ _ bq4011H/bq4011HY High-Speed 32Kx8 Nonvolatile SRAM Features General Description >• Acces^cycle tim es of 20 and 25 ns The CMOS bq4011H is a nonvolatile 2 6 2 ,1 4 4 -b it fa s t s ta tic RAM organized as 32,768 words by 8 bits.


    OCR Scan     		PDF bq4011H/bq4011HY 32Kx8 bq4011H 28-pin BO-41 bq4011H-20 bq4011H-25 bq4011HY

    KM62256D

    Abstract: KM62256DLI-L KM62256DL-L km62256
    Text: KM62256D Family CMOS SRAM Document Title 32Kx8 bit Low Power CMOS Static RAM Revision HSstorv Revision No History Draft Data Remark 0.0 Initial draft M ay 18th 1997 Design target 0.1 First revision - KM62256DLVDLI Isbi = 100 -> 50|xA K M 6 2256D L-L Is b i = 20 - > 1 0 |iA


    OCR Scan     		PDF KM62256D 32Kx8 KM62256DLVDLI KM62256DL-L KM62256DLI-L KM62256D-4/5/7 KM62256DI7DLI KM62256DL-L/DLI-L KM62256DL/DLI km62256

    Untitled

    Abstract: No abstract text available
    Text: M D I EDI8832C/P55/70/85/100/120/150 High Performance 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic Features The EDI8832C/P is a high performance, low power CMOS Static RAM organized as 32,768 words by 8 bits each, tt is available in both standard power C and low


    OCR Scan     		PDF EDI8832C/P55/70/85/100/120/150 32Kx8 EDI8832C/P MILSTD-883C, 150ns Compatib1/89 EDI8832C/P55/70/85/100/120/150

    Untitled

    Abstract: No abstract text available
    Text: EDI8M8256C70/100/120PC ^EDI High Performance 2 Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8256C is a 2048K bit CMOS Static RAM module. It is based on eight 32Kx8 Static RAMs in plastic VSOP packages mounted on a multi-layered ceramic


    OCR Scan     		PDF EDI8M8256C70/100/120PC 256Kx8 EDI8M8256C 2048K 32Kx8 120ns