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    BQ4011H Search Results

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    Benchmarq Microelectronics Inc BQ4011HMA35

    32K X 8 NON-VOLATILE SRAM Non-Volatile SRAM, 32KX8, 35ns, CMOS
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    BQ4011H Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    bq4011H-35 Texas Instruments IC NVRAM NVSRAM SERIAL 256KBIT 5V 28DIP Scan PDF
    bq4011H-45 Texas Instruments IC NVRAM NVSRAM SERIAL 256KBIT 5V 28DIP Scan PDF
    BQ4011HMA-20 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM, 20 ns, DMA28, Static RAM Original PDF
    BQ4011HMA-25 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM, 25 ns, DMA28, Static RAM Original PDF
    BQ4011HMA-35 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM, 35 ns, DMA28, Static RAM Original PDF
    BQ4011HMA-45 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM, 45 ns, DMA28, Static RAM Original PDF
    bq4011HY-45 Texas Instruments IC NVRAM NVSRAM SERIAL 256KBIT 5V 28DIP Scan PDF
    BQ4011HYMA-20 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM, 20 ns, DMA28, Static RAM Original PDF
    BQ4011HYMA-25 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM, 25 ns, DMA28, Static RAM Original PDF
    BQ4011HYMA-35 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM, 35 ns, DMA28, Static RAM Original PDF
    BQ4011HYMA-45 Texas Instruments BQ4011 - IC 32K X 8 NON-VOLATILE SRAM, 45 ns, DMA28, Static RAM Original PDF

    BQ4011H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advance Information Addendum b BENCHMARQ _ bq4011H/bq4011HY High-Speed 32Kx8 Nonvolatile SRAM Features General Description >• Acces^cycle tim es of 20 and 25 ns The CMOS bq4011H is a nonvolatile 2 6 2 ,1 4 4 -b it fa s t s ta tic RAM organized as 32,768 words by 8 bits.


    OCR Scan     		PDF bq4011H/bq4011HY 32Kx8 bq4011H 28-pin BO-41 bq4011H-20 bq4011H-25 bq4011HY

    bq4011

    Abstract: No abstract text available
    Text: BENCHMARÛ MICROELEC b 43E ]> 137001=1 0 0 0 0 5 7 0 1 IBEN bq4011H/bq4011HY BENCHMARQ 32Kx8 Nonvolatile Fast SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011H is a nonvolatile 262,144-bit fast static RAM organized as 32,768 words by 8 bits.


    OCR Scan     		PDF GD0DS70 bq4011 H/bq4011HY 32Kx8 28-pin 10-year bq4011H 144-bit A0-A14

    Untitled

    Abstract: No abstract text available
    Text: b q 4 0 1 1 H /b q 4 0 1 1 H Y BENCHMARQ 32Kx8 Nonvolatile Fast SRAM Features General Description Pin Connections Pin Names > Data retention in the absence of The CMOS bq4011H is a nonvolatile 262,144-bit fast static RAM power organized as 32,768 words by 8 bits.


    OCR Scan     		PDF 32Kx8 bq4011H 144-bit 28-pin

    Untitled

    Abstract: No abstract text available
    Text: b Advance Information Addendum bq4011H/bq4011HY BENCHMARQ High-Speed 32Kx8 Nonvolatile SRAM Features General Description ► Access/cycle times of 20 and 25 ns The CMOS bq4011H is a nonvolatile 2 6 2 ,1 4 4 -b it fa s t sta tic RAM organized as 32,768 words by 8 bits.


    OCR Scan     		PDF bq4011H/bq4011HY 32Kx8 bq4011H bq4011HY

    Untitled

    Abstract: No abstract text available
    Text: bq4011 H/bq4011 HY BENCHMARQ 32Kx8 Nonvolatile Fast SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011H is a nonvolatile 2 6 2 ,1 4 4 -b it fa s t sta tic RAM organized as 32,768 words by 8 bits. The integral control circuitry and


    OCR Scan     		PDF 4011H 32Kx8 bq4011H 28-pin bq4011H/bq4011HY

    Untitled

    Abstract: No abstract text available
    Text: bq4011H/bq4011HY BENCHMARQ f e 32Kx8 Nonvolatile Fast SRAM Features General Description ► Data retention in the absence of power The CMOS bq4011H is a nonvolatile 2 6 2 ,1 4 4 -b it fa st s ta tic RAM organized as 32,768 words by 8 bits. The integral control circuitry and


    OCR Scan     		PDF bq4011H /bq4011H 32Kx8 bq4011H/bq4011HY

    Neuron 3150

    Abstract: Neuron Chip 3150 CYPRESS Neuron Chip 3150 2k x 8 nvram 3150 Echelon TDSR 3150 l gal20v8 application dallas date code FOR DS1230Y 57C256F-70
    Text: N eu ro n 3150" Chip August 1991 External Memory Interface Lon W orks Engineering Bulletin Introduction T he NEURON 3150 CHIP p ro v id e s a n ex tern al m e m o ry b u s to p e rm it e x p a n sio n of m e m o ry u p to 58K b y tes b e y o n d th e 512 b y tes of EEPROM a n d 2K b y tes of RAM


    OCR Scan     		PDF

    BQ4025

    Abstract: bq4025Y
    Text: dcnci iwiARQ Nonvolatile Static RAM Family Summary Data Sheet Family Features General Description a -10% supply tolerance. No suffix denotes a -5% supply tolerance. >• D ata retention in the absence of power The CMOS nonvolatile static RAM NVSRAM fam ily is available in a


    OCR Scan     		PDF