32MB Search Results

simm EDO 72pin

Contextual Info: 72PIN EDO SIMM 32MB With 4Mx4 60ns TS8MED3260 Description Features The TS8MED3260 is a 8M by 32-bit dynamic RAM • Extended Data Out Mode operation module with 16 pcs of 4Mx4 DRAMs assembled on the • Single +5.0V ± 10% power supply. printed circuit board.

123401

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29LV065U32SJ08-XX 32MB FLASH SIMM, based on AMD Am29LV065D Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29LV065U32SJ08-XX is a Flash Memory SIMM, composed of four 64Mbit CMOS flash memories, each organized as 8M X 8 bits mounted on a substrate

HIP-66

Contextual Info: FLASH AS8FLC1M32 FIGURE 1: PIN ASSIGNMENT Top View Hermetic, Multi-Chip Module (MCM) 32Mb, 1M x 32, 3.0Volt Boot Block FLASH Array Available via Applicable Specifications: • MIL-PRF-38534, Class H FEATURES • • • • • • • • • • • •

s3c2440 pin

Abstract: S3C2440A s3c2440A ARM920T S3C2440 Samsung S3C2440 samsung s3c2440 arm920t core TSXP ARM920T EINT20 128MBYTE
Contextual Info: Embest Mini2440-I Processor Card Features z z z z z z z z z Dimensions: 65mm x 45mm Temperature: 0~+70℃ Samsung's S3C2440A microcontroller based on a 1.33V Static ARM920T CPU core with MMU 64Mbyte SDRAM 32MB/128MB compatible 128Mbyte Nand flash (support 256Mbyte for option)

DELL inspiron power supply diagram

Abstract: Thinkpad 535X philips pcd500 dell inspiron ARMADA 300 ECC COMPAQ Toshiba Satelite C APPLE dock prius cf 44 pin to ide 1.8
Contextual Info: CompactFlash Card W7B6-S Series Version:1.02 June, 2001 Description CompactFlash™ Card W7B6-S series were made by Wintec Industries in Fremont, CA USA. It complies with CompactFlash™ specification, and is suitable for the usage of data storage memory medium for

MT4LSDT1664

Abstract: MT4LSDT464 MT4LSDT864 MT4LSDT1664HG-133B1 HY10
Contextual Info: 32MB, 64MB, 128MB x64, SR 144-PIN SDRAM SODIMM SMALL-OUTLINE SDRAM MODULE MT4LSDT464(L)H(I) – 32MB MT4LSDT864(L)H(I) – 64MB MT4LSDT1664(L)H(I) – 128MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules

Contextual Info: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11414-1E 32Mbit Mobile FCRAM 1.8V, Fast Page Mode MB82DPS02183B-80/-80L/-85/-85L New released • FEATURES • • Asynchronous SRAM interface 8 Words Page Address Access Capability _ • • • • • •

TC17xx

Abstract: PQFP80 TC17X M58BW M58BW016 M58BW016D M58BW032 MPC5554 FLNORAUT0405 NOR FLASH
Contextual Info: M58BW NOR Flash memories Automotive Flash memory solutions with burst mode Designed for automotive applications, STMicroelectronics’ M58BW016 16Mb and M58BW032 (32Mb) Flash memories, are built on proven 0.13µm technology. Featuring a wide operating-temperature range,

VFIR

Abstract: PIN photodiode 850nm PIN photodiode chip 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm Fiber-optic PIN photodiode A/W 850nm SD150-14-006 VCSEL die bonding PIN photodiode chip 850nm
Contextual Info: SD150-14-006 16/32Mbps Si PIN Photodiode Chip The SD150-14-006 chip is a silicon pin photodiode that has been specifically developed for the price-sensitive OEM optical communication applications, including IrDA-compatible transceivers, fiber-optic LAN, VCSEL-based IR links, and instrumentation. Designed to be fully depleted at

Contextual Info: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide

MR27V3266D

Abstract: LA5A6
Contextual Info: OKI Semiconductor Preliminary MR27V3266D 2M x16 / 1M x32 Synchronous OTP ROM DESCRIPTION The MR27V3266D is a 32Mbit One Time Programmable Synchronous Read Only Memory whose configuration can be electrically switched between 2,097,152 x16bit word mode and 1,048,576 x32bit(double word mode) by

Contextual Info: 32MB 168PIN PC66 SDRAM DIMM With 2M X 8 3.3VOLT TS4MLS64V1P2N Description Placement The TS4MLS64V1P2N is a 4M bit x 64 Synchronous Dynamic RAM, high density for PC-66. The TS4MLS64V1P2N consists of 16pcs CMOS 2Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a

Contextual Info: 168PIN PC100 Unbuffered DIMM 32MB With 4M X16 CL3 TS4MLS64V8Z Description Placement The TS4MLS64V8Z is a 4M x 64 bits Synchronous Dynamic RAM high-density for PC-100.The TS4MLS64V8Z consists of 4pcs CMOS 4Mx16 bits Synchronous DRAMs in TSOP-II 400mil packages and

VOICE RECORDER IC

Abstract: VOICE RECORDER IC programming MN48V32080F
Contextual Info: Panasonic AV Flash memory MN48V32080F • Overview AV Flash memory is a 32Mbit(4block x 1,985 sector x 18page x 28byte configuration) serial Flash memory with single 3.3V power supply. The AV Flash memory is a full serial I/O type memory transferring addresses,

diskonchip

Abstract: MD3831-D16-V3Q18 diskonchip g4 MD3831-D16-V3Q18-X AP-DOC-057 smartphone MOTHERBOARD CIRCUIT diagram AD10 PR31700 password lock protection using mobile phone f Diskonchip Millennium Plus
Contextual Info: Data Sheet Mobile DiskOnChip Plus 16/32MByte 1.8V I/O Flash Disk, Protection and Security-Enabling Features Highlights Mobile DiskOnChip Plus 16/32MByte 128/256Mbit is one of the industry’s most efficient storage solutions, with the fastest write rates, the

MT4LSDT1664AG-133B1

Abstract: 168-PIN MO-161
Contextual Info: 32MB / 64MB / 128MB x 64 168-PIN SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT4LSDT464A - 32MB MT4LSDT864A - 64MB MT4LSDT1664A- 128MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES 168-Pin DIMM MO-161 • PC100- and PC133-compliant

LH28F320BFHE-PBTLF1

Abstract: Flash Memory 32Mbit DQ15DQ0
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F320BFHE-PBTLF1 Flash Memory 32Mbit 2Mbitx16 (Model Number: LHF32FF1 Lead-free (Pb-free) Spec. Issue Date: October 15, 2004 Spec No: EL16X114 LHF32FF1 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

dpdt slide switch

Abstract: 2N2222A BLM21A102 GR-253-CORE OC-24 SY87701V CD273
Contextual Info: 5V/3.3V 32-1250Mbps AnyRate CLOCK AND DATA RECOVERY FEATURES SY87701V DESCRIPTION • 3.3V and 5V power supply options ■ Clock and data recovery from 32Mbps up to 1.25Gbps NRZ data stream ■ Complies with Bellcore, ITU/CCITT and ANSI specifications for applications such as OC-1, OC-3,

Micron Q-Flash memory

Abstract: FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11
Contextual Info: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3‡ Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)

1N4148

Abstract: 2N2222A BLM21A102 GR-253-CORE SY87700V SY87701V dpdt slide switch
Contextual Info: 5V/3.3V 32-175Mbps AnyRate CLOCK AND DATA RECOVERY FEATURES SY87700V DESCRIPTION • 3.3V and 5V power supply options ■ SONET/SDH/ATM compatible ■ Clock and data recovery from 32Mbps up to 175Mbps NRZ data stream ■ Two on-chip PLLs: one for clock generation and

Mobile SDRAM

Abstract: DDR SDRAM SDRAM PSRAM sdram 4M 16 4 FLASH NOR 64mb Q-309 Q110
Contextual Info: Product Selection Guide of ESMT KGD SDRAM Updated Date : April'2008 Density Organization Description 16Mb 1Mb*16 32Mb 2Mb*16 1Mb*32 4Mb*16 Refresh Speed MHz Pad coordinates MP SDRAM 2.5V SDRAM 3.3V SDRAM 3.3V SDRAM 3.3V SDRAM 2.5V 2K 2K 2K 2K 4K 143 Now

edo dram 50ns 72-pin simm

Abstract: UG232W3264HSG
Contextual Info: UG232W3264HSG T Data sheets can be downloaded at www.unigen.com 128M Bytes (32M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM based on 16 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM The UG232W3264HSG(T) is a 32Mbits x 32 EDO

Contextual Info: cP FUJI March 1997 Revision 2.1 DATA SHEET - * SDC4U V6442- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The SDC4UV6442-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized as

Contextual Info: FUJITSU November 1996 Revision 1.0 DATA S H E E T - EDC4B V7282- 60/70 (J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module 3.3 V (ECC), Buffered - General Description The EDC4BV7282-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module orga­