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    32N120 Search Results

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    32N120 Price and Stock

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    IXYS Corporation IXFN32N120

    MOSFET N-CH 1200V 32A SOT-227B
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    DigiKey IXFN32N120 Box 10
    • 1 -
    • 10 $32.91
    • 100 $32.91
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    Newark IXFN32N120 Bulk 1
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    IXYS Corporation IXFN32N120P

    MOSFET Modules 32 Amps 1200V
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    Mouser Electronics IXFN32N120P 589
    • 1 $96.61
    • 10 $80.36
    • 100 $73.19
    • 1000 $73.19
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    TTI IXFN32N120P Tube 300
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    TME IXFN32N120P 1
    • 1 $95.33
    • 10 $75.66
    • 100 $75.66
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    IXYS Corporation IXGT32N120A3

    IGBTs GenX3 1200V IGBTs
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    Mouser Electronics IXGT32N120A3 298
    • 1 $19.97
    • 10 $12.46
    • 100 $12.46
    • 1000 $11.40
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    TTI IXGT32N120A3 Tube 30
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    • 100 $9.99
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    TME IXGT32N120A3 1
    • 1 $10.75
    • 10 $8.55
    • 100 $7.68
    • 1000 $7.68
    • 10000 $7.68
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    IXYS Corporation IXGH32N120A3

    IGBTs 32 Amps 1200V
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    Mouser Electronics IXGH32N120A3 295
    • 1 $12.80
    • 10 $9.05
    • 100 $9.05
    • 1000 $7.44
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    TTI IXGH32N120A3 Tube 30
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    • 100 $7.44
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    Bristol Electronics IXGH32N120A3 25
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    TME IXGH32N120A3 1
    • 1 $10.97
    • 10 $10.97
    • 100 $6.68
    • 1000 $6.68
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    Littelfuse Inc IXGT32N120A3-TRL

    IGBTs Disc IGBT Low Vsat PT 1200V 32A TO-268
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    Mouser Electronics IXGT32N120A3-TRL
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    RS IXGT32N120A3-TRL Bulk 8 Weeks 400
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    32N120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs IXFN 32N120 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = 1200V = 32A Ω = 0.35Ω D G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR


    Original     		32N120 728B1 123B1 728B1 065B1 PDF

    Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs IXFN 32N120 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = 1200V = 32A Ω = 0.35Ω D G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR


    Original     		32N120 OT-227 E153432 728B1 123B1 728B1 065B1 PDF

    32N12

    Abstract: 32N120A3
    Contextual Info: Preliminary Technical Information High Voltage IGBT IXGH 32N120A3 IXGT 32N120A3 VCES = 1200 V IC25 = 75 A VCE sat ≤ 2.35 V Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1200 V VCER TJ = 25°C to 150°C, RGE = 1 MΩ 1200 V VGES Continuous


    Original     		32N120A3 IC110 O-247 O-268 32N12 32N120A3 PDF

    32N12

    Abstract: 32N120
    Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs IXFN 32N120 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = 1200V = 32A Ω = 0.35Ω D G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR


    Original     		32N120 728B1 123B1 728B1 065B1 32N12 32N120 PDF

    max2852

    Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs IXFN 32N120 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = 1200V = 32A Ω = 0.35Ω D G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR


    Original     		32N120 OT-227 E153432 728B1 max2852 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF