32R528 Search Results

H0Y-H13Y

Abstract: H13V
Contextual Info: SSI 32R5281AR M m M lm 14-Channel Two-Terminal Read/Write Device A TDK Group/Company Advance Information July 1992 DESCRIPTION FEATURES The SSI 32R5281AR Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low

Contextual Info: SSI 32R5281R M M M k m 14-Channel Two-Terminal Read/Write Device s A TDK G rou p /C om pany Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5281R Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low

32R528

Abstract: SSI32R5
Contextual Info: äiiconMkms SSI 32R528/528R 8 & 9-Channel Thin Film Read/Write Device Preliminary Data I 1 July, 1990 DESCRIPTION FEATURES The SSI 32R528/528R Read/Write devices are bipolar monolithic integrated circuits designed for use with two terminal thin film recording heads. They provide a

32R528R

Contextual Info: SSI 32R528R mMMfaflS 9-Channel Thin Film Read/Write Device A TDK Group/Company Preliminary Data November 1991 DESCRIPTION FEATURES The SSI 32R528R Read/Write device is a bipolar monolithic integrated circuit designed for use with two terminal thin tilm recording heads. It provides a low

MARK 5FT

Contextual Info: SSI 32R528/528R m M â t à n t s 8 & 9-Channel Thin Film Read/Write Device ' Prelimin ary Data I 1 July, 1990 DESCRIPTION FEATURES The SSI 32R528/528R Read/Write devices are bipolar monolithic integrated circuits designed for use with two terminal thin film recording heads. They provide a

H13Y

Contextual Info: SSI 32R5281R c w m M fc m A TDK Group/Company 14-Channel Two-Terminal Read/Write Device s Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5281R Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low

Contextual Info: S S I 32R5281AR mmsysbns 14-Channel Two-Terminal Read/Write Device A TDK Group/Company Advance Information July 1992 DESCRIPTION FEATURES The S S I 32R5281AR Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low

Contextual Info: SSI 32R528R csmmsiisfms 9-Channel Thin Film Read/Write Device A TDK Group/Company Preliminary Data November 1991 DESCRIPTION FEATURES The SSI 32R528R Read/Write device is a bipolar monolithic integrated circuit designed tor use with two terminal thin tilm recording heads. It provides a low

Contextual Info: dim Mions SSI 32R528/528R 8 & 9-Channel Thin Film Read/Write Device Preliminary Data I 1 July, 1990 DESCRIPTION FEATURES The SSI 32R528/528R Read/Write devices are bipolar monolithic integrated circuits designed for use with two terminal thin film recording heads. They provide a

VM313

Contextual Info: # a VTC.nc Value the Customer " V10-CHANNEL, M 3 1 3 HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEA TUR ES TWO/THREE TERMINAI 8 SERVO PREAMPLIFIERS • • • • • • • • • • • High Performance: - Read m ode gain = 150 V /V

Contextual Info: VM 313M Value the Customer 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1995 FE A T U R E S • • • • • • • • • • • CO N N EC TIO N DIAGRAM High Performance: - Read Mode Gain = 150 V/V - Low Input Noise = 0.8nV/VHz Maximum

DIODE H5y

Contextual Info: w VM 313 U3SJ2ESL- 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1994 D ESCRIPTIO N The VM313 is a high-performance, low-power, bipolar mono­ lithic read / write preamplifier designed for use with two-terminal

Contextual Info: VM313M YZSc!," ;» 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES • • • • • • • • • • • High Performance: - Read mode gain = 150V/V - Low input noise = 0.8nV /\fHz maxim um - Input capacitance = 25pF maxim um

DIODE H5X

Contextual Info: vC^vTcmc. Value the C ustom er V M 313 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1992 FEATURES The VM313 is a high-performance, low-power, bipolar mono­ lithic read / write preamplifier designed for use with twoterminal thin-film recording heads. It provides write current

vtc vm

Contextual Info: VM 313 August, 1995 FEATU R ES • CONNECTION DIAGRAMS High Performance: - Read Mode Gain = 150 V/V - Low Input Noise = O.SnV/VFiz Maximum - Input Capacitance = 25 pF Maximum - W rite C urrent Range = 10 mA to 40 mA - Head Inductance Range = 200 nH to 3 |iH

Contextual Info: v # X # „to1 Y I£ JLn± - VM 313 10-CHANNEL, HIGH PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1991 F E A TU R ES • High Perform ance: - Read mode gain = 150V/V D E S C R IP T IO N The VM313 is a high-perform ance, low-power, bipolar monolithic re a d /w rite pream plifier designed for use with

34-LEAD

Contextual Info: VM 313M £ £ l2 £ ~ 10-c h a n n e l , h ig h - p e r f o r m a n c e , THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1994 FE A T U R E S • High Performance: - Read Mode Gain = 150 V/V - Low Input Noise = 0.8nVA/Hz Maximum - Input Capacitance = 25 pF Maximum

Contextual Info: SSI 32R2040 ¿iim systems' 14-Channel Two-Terminal Read/Write Device A TDK Group/Company Advance Information January 1993 DESCRIPTION FEATURES The SSI 32R2040 Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low

Contextual Info: ^ V T C . n c Value the Customer V M 3 1 3 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES • High Performance: - Read mode gain = 150 V/V - Low input noise = 0.8nV/VHz maximum - Input capacitance = 25 pF maximum