33 DB AT 2 GHZ Search Results

FP750SOT343

Abstract: MIL-HDBK-263
Contextual Info: PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 33 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS

transistor npn c 6073

Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)

SAV-541

Abstract: SAV-541 S-PARAMETER MODEL ATF-54143 MMM1362 N8975A
Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

TAV-541

Abstract: FG873 N4000A N8975A tav 541
Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

SAV-541

Abstract: SAV-541 S-PARAMETER MODEL SAV541 avago marking -2
Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

TAV-541

Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

TAV-541

Abstract: FG873 N4000A N8975A vgd schematic diagram tav 541 V1525
Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

SAV-541

Abstract: SAV-541 S-PARAMETER MODEL "3570 1210" ATF-54143 MMM1362 N8975A ATF-54143 application notes
Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

TMD0708-2

Contextual Info: TOSHIBA POWER GaAs MMIC MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD0708-2 Features * • HIGH POWER BROAD BAND INTERNALLY MATCHED Pi dB— 33 dBm at 7. 1 to 8. 5 GHz ■ HIGH GAIN HERMETICALLY SEALED PACKAGE GldB= 22 dB at 7. 1 to 8. 5 GHz ABSOLUTE MAXIMUM RATINGS Ta=25°C

Contextual Info: Wcinschel Model 33 dc to 8.5 GHz MEDIUM POWER FIXED COAXIAL ATTENUATOR 25 WATTS Type N Connectors F X PRESS 8 0 0 -5 4 2 -4 4 5 7 POWER COEFFICIENT: <0.002 dB/dB/watt TEMPERATURE COEFFICIENT: <0.0004 dB/dB/°C TEMPERATURE RANGE: -55 °C to 125 °C. CALIBRATION: Insertion loss test data supplied at dc,

gali-3

Abstract: Gali-6 GALI-52 marking code 4f amplifier DF782
Contextual Info: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz NEW! Gali all specifications at 25°C low power, up to +13.4 dBm output J u MODEL NO. Gali Gali Gali Gali Gali Gali 1 21 2 33 3 S66 MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz* GAIN , dB Typical FREQ.

TMD0507-2

Contextual Info: TOSHIBA • TD^EM? Q0214Ö7 b33 H POWER GaAs MMIC MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD0507-2 Features: ■ HIGH POWER ■ BROAD BAND INTERNALLY MATCHED PldB= 33 dBm at 5. 1 to 7. 2 GHz ■ HIGH GAIN ■ HERMETICALLY SEALED PACKAGE GldB= 22 dB at 5. 1 to 7. 2 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1213-2 TECHNICAL DATA FEATURES: • HIGH POWER PidB = 33-5 dBm at 12.7 GHz to 13.2 GHz ■ HIGH GAIN GidB = 7.5 dB at 12.7 GHz to 13.2 GHz ■ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE

Contextual Info: TOSHIBA • 0 0 2 1 4 0 7 b33 H ^ J j POWER GaAs MMIC MICROWAVE SEMICONDUCTOR TMD0507-2 TECHNICAL DATA Features^ ■ BROAD BAND INTERNALLY MATCHED ■ HIGH POWER PldB= 33 dBm at 5. 1 to 7. 2 GHz ■ HERMETICALLY SEALED PACKAGE ■ HIGH GAIN GldB= 22 dB at 5. 1 to 7. 2 GHz

Contextual Info: TOSHIBA POWER GaAs MMIC MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD0507-2 • Features• ■ HIGH POWER ■ BROAD BAND INTERNALLY MATCHED PldB= 33 dBm at 5. 1 to 7. 2 GHz ■ HIGH GAIN ■ HERMETICALLY SEALED PACKAGE GldB= 22 dB at 5. 1 to 7. 2 GHz ABSOLUTE MAXIMUM RATINGS Ta=25°C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs MMIC S9751 PRELIMINARY Features • High power - Po = 33 dBm at Pin = 2 dBm • Super low distortion - Padj = -65 dBc at Po = 32 dBm, 600 kHz offset • High gain - Gp = 31 dB at Pin = 2 dBm • Input/output port matched to 5 0 ii

Contextual Info: TOSHIBA 1 C10CI7247 0 0 2 1 4 0 ^ 40b • POWER GaAs MM 1C MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD0708-2 Features* ■ HIGH POWER ■ BROAD BAND INTERNALLY MATCHED PldB= 33 dBm at 7.1 to 8. 5 GHz ■ HIGH GAIN ■ HERMETICALLY SEALED PACKAGE GldB= 22 dB at 7. 1 to 8.5 GHz

2SA1977

Abstract: NE68133 NE97733 S21E
Contextual Info: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz 33 SOT 23 STYLE