3300V Search Results

thyristor YS 160 004

Abstract: SG700FXF11 Gate Turn-off Thyristor 600V 20A lt700 Thyristor ys 170
Contextual Info: GATE TURN-OFF THYRISTOR SG700FXF11 TENTATIVE DATA CHOPPER, INVERTER APPLICATION Unit in mm 3 -0 6 4 . Repetitive Peak Off-State Voltage V d RM=3300V . R.M.S On-State Current IT RMS =170A . Peak Turn-Off Current ITGQM=700A . Critical Rate of Rise of On-State Current

CM800HC-66H

Abstract: r 1241 transistor
Contextual Info: MITSUBISHI HVIGBT MODULES CM800HC-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HC-66H ● IC . 800A ● VCES . 3300V

a4506

Contextual Info: 配線の時は次の注意事項をお守りください。 配線上の注意事項 表12. MLFC の絶縁距離 （１）絶縁距離 口出し線は遮へいを設けると外径が太くなる No. 3300V 6600V １ 接地金属体と電線 表面の距離：R（mm）

LTC6409IUDB

Abstract: LTC6409 LTC2262-14 LTC6409C LTC6409CUDB LTC6409H LTC6409HUDB Marking C4 LTC6409UDB
Contextual Info: LTC6409 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver Description Features 10GHz Gain-Bandwidth Product n 88dB SFDR at 100MHz, 2V P-P n 1.1nV/√Hz Input Noise Density n Input Range Includes Ground n External Resistors Set Gain Min 1V/V n 3300V/µs Differential Slew Rate

g04 series

Abstract: TTL 7417 LT6411 ETC1-1TTR LT6411CUD single-ended to differential conversion LT6411IUD LTC2249 IMD310M
Contextual Info: LT6411 650MHz Differential ADC Driver/Dual Selectable Gain Amplifier DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 650MHz –3dB Small-Signal Bandwidth 600MHz –3dB Large-Signal Bandwidth High Slew Rate: 3300V/µs Easily Configured for Single-Ended to Differential

MJ1000

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DD1000S33HE3 IHM-B模块 IHM-Bmodule 初步数据/PreliminaryData VCES = 3300V IC nom = 1000A / ICRM = 2000A 典型应用 • 中压变流器 • 电机传动 • 大功率变流器 • UPS系统

DD1000S33HE3

Contextual Info: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules DD1000S33HE3 IHM-Bモジュール IHM-Bmodule 暫定データ/PreliminaryData VCES = 3300V IC nom = 1000A / ICRM = 2000A 一般応用 • 中圧コンバータ

DD1000S33HE3

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1000S33HE3 IHM-BModul IHM-Bmodule VorläufigeDaten/PreliminaryData VCES = 3300V IC nom = 1000A / ICRM = 2000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe

Contextual Info: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules DD500S33HE3 IHM-Bモジュール IHM-Bmodule 暫定データ/PreliminaryData VCES = 3300V IC nom = 500A / ICRM = 1000A 一般応用 • 中圧コンバータ

hvigbt diode

Abstract: Converter for Induction Heating CM800HB-66H M6 transistor
Contextual Info: MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-66H ● IC . 800A ● VCES . 3300V

iec 61287

Abstract: RM1200DG-66S RM1200DG high voltage diode
Contextual Info: 三菱半導体〈HIGH VOLTAGE DIODE モジュール〉 RM1200DG-66S 大電力スイッチング用 絶縁形 High Voltage Diode モジュール RM1200DG-66S ¡IF …………………………………………… 1200A ¡VRRM ……………………………………… 3300V

CM1200HA-66H

Contextual Info: 三菱半導体〈HVIGBTモジュール〉 CM1200HA-66H 大電力スイッチング用 絶縁形 HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール CM1200HA-66H ¡IC …………………………………………… 1200A ¡VCES ……………………………………… 3300V

100FXFG13

Abstract: 100FXFH13
Contextual Info: TOSHIBA 10OFXFG 13,1 OOFXFH13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100FXFG13, 100FXFH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage V r r m = 3300V Average Forward Current ÏF AV = 1(>0a Reverse Recovery Time (Tj = 25°C) tj»j»—3.1/¿s

SG2200GXH24

Abstract: SG2200FXF24 thyristor 2200A
Contextual Info: TOSHIBA SG2200FXF24,SG2200GXH24 TOSHIBA GATE TURN-OFF THYRISTOR SG2200FXF24, SG2200GXH24 Unit in mm INVERTER APPLICATION 2 - 0 3 . 5 + 0.2 DEPTH 2.1 ±0 .4 Repetitive Peak Off-State Voltage : V]}R]y[ = 4500V, 3300V R.M.S On-State Current : It RMS = 1000A

Hitachi DSA00281

Abstract: 330nf 250 v
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10002 R2 MBN1500E33E3 Silicon N-channel IGBT 3300V E3 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.

DIM400XCM33-F000

Contextual Info: DIM400XCM33-F000 IGBT Chopper Module DS5938-1.0 February 2009 LN26594 FEATURES Soft Punch Through Silicon Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8 V 400A

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HC-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-66H ● IC . 1200A ● VCES . 3300V

Contextual Info: MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-66H ● IC . 800A ● VCES . 3300V

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DD500S33HE3 IHM-B模块 IHM-Bmodule VCES = 3300V IC nom = 500A / ICRM = 1000A 典型应用 • 中压变流器 • 电机传动 • 牵引变流器 • UPS系统 • 风力发电机 TypicalApplications

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1000S33HE3 IHM-BModul IHM-Bmodule VCES = 3300V IC nom = 1000A / ICRM = 2000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe • Traktionsumrichter • USV-Systeme

ALSIC 145

Abstract: DFM400PXM33-F000
Contextual Info: DFM400PXM33-F000 Fast Recovery Diode Module DS5909- 1.1 May 2008 LN26124 . FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop KEY PARAMETERS VRRM VF (typ) IF (max) IFM (max) 3300V 2.9V 400A 800A Isolated AlSiC Base with AlN substrates

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ1500R33HL3 IHM-B模块采用第三代沟槽栅/场终止IGBT3和第三代发射极控制二极管 VCES = 3300V IC nom = 1500A / ICRM = 3000A

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FZ1000R33HE3 IHM-B模块采用第三代高速沟槽栅/场终止IGBT和第三代发射极控制二极管 VCES = 3300V

Contextual Info: MITSUBISHI HVIGBT MODULES CM400DY-66H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-66H • Ic . .400A • VCES . . 3300V • Insulated Type