SG2200GXH24 Search Results

SG2200GXH24

Abstract: SG2200FXF24 thyristor 2200A
Contextual Info: TOSHIBA SG2200FXF24,SG2200GXH24 TOSHIBA GATE TURN-OFF THYRISTOR SG2200FXF24, SG2200GXH24 Unit in mm INVERTER APPLICATION 2 - 0 3 . 5 + 0.2 DEPTH 2.1 ±0 .4 Repetitive Peak Off-State Voltage : V]}R]y[ = 4500V, 3300V R.M.S On-State Current : It RMS = 1000A

Contextual Info: TOSHIBA GATE TU RN -O FF THYRISTOR SEMICONDUCTOR T O SH IB A TECHNICAL SG2200FXF24, SG2200GXH24 DATA SG2200FXF24 INVERTER APPLICATION U nit in mm 2- ^3.5 ±0.2 • Repetitive Peak Off-State Voltage : V d r m ;= 4500V, 3300V • R.M.S On-State C urrent •

Contextual Info: TOSHIBA SG2200FXF24, SG2200GXH24 Unit in mm Inverter Application I -¿3.5 ±0.2 • Repetitive Peak Off-State Voltage: VDrm=4500V, 3300V • R.M.S. On-State Current: h rm s = 1 0 0 0 A • Peak Turn-Off Current: it g q m = 2 2 0 0 A • Critical Rate of Rise of On-State Current:

snubber diode

Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Contextual Info: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11

thyristor 2200A

Abstract: GXH24 650v thyristor
Contextual Info: SG2200 FXF,GXH 24 TOSHIBA GATE TURN-OFF THYRISTOR SG2200 (FXF, GXH) 24 (SG2200FXF24) INVERTER APPLICATION U n it in mm 2-#3.5±0.2 DEPTH 2.1 ± 0 .4 Repetitive P eak Off-State Voltage : V d r m = 4500V, 3300V R.M.S O n-State C urrent : IT(RMS) = 1000A Peak Turn-Off C urrent

500EXH21

Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Contextual Info: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that

100EXG11

Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
Contextual Info: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26

gate turn off thyristors

Abstract: 500EXH21 800gxhh21 800exh21
Contextual Info: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that