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    33CN10N Search Results

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    33CN10N Price and Stock

    Infineon Technologies AG IPD33CN10NGATMA1

    MOSFET N-CH 100V 27A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () IPD33CN10NGATMA1 Cut Tape 28,493 1
    • 1 $1.4
    • 10 $0.671
    • 100 $0.5008
    • 1000 $0.4509
    • 10000 $0.4509
    Buy Now
    IPD33CN10NGATMA1 Digi-Reel 28,493 1
    • 1 $1.4
    • 10 $0.671
    • 100 $0.5008
    • 1000 $0.4509
    • 10000 $0.4509
    Buy Now
    IPD33CN10NGATMA1 Reel 27,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.36838
    Buy Now
    Avnet Americas IPD33CN10NGATMA1 Reel 52,500 16 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.30545
    Buy Now
    Mouser Electronics IPD33CN10NGATMA1 4,156
    • 1 $1.39
    • 10 $0.597
    • 100 $0.451
    • 1000 $0.384
    • 10000 $0.368
    Buy Now
    Newark IPD33CN10NGATMA1 Bulk 554 1
    • 1 $1.37
    • 10 $0.658
    • 100 $0.491
    • 1000 $0.384
    • 10000 $0.368
    Buy Now
    Rochester Electronics IPD33CN10NGATMA1 17,313 1
    • 1 -
    • 10 -
    • 100 $0.499
    • 1000 $0.4142
    • 10000 $0.3693
    Buy Now
    Chip One Stop IPD33CN10NGATMA1 Cut Tape 2,500 0 Weeks, 1 Days 5
    • 1 -
    • 10 $0.549
    • 100 $0.544
    • 1000 $0.529
    • 10000 $0.464
    Buy Now
    EBV Elektronik IPD33CN10NGATMA1 17 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    IBS Electronics IPD33CN10NGATMA1 20,000 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.3445
    Buy Now
    Win Source Electronics IPD33CN10NGATMA1 80,000
    • 1 -
    • 10 -
    • 100 $0.8166
    • 1000 $0.5445
    • 10000 $0.5445
    Buy Now

    Infineon Technologies AG IPD33CN10NGBUMA1

    MOSFET N-CH 100V 27A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPD33CN10NGBUMA1 Reel
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 -
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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IPD33CN10NG 261 7
    • 1 -
    • 10 $0.75
    • 100 $0.4875
    • 1000 $0.2812
    • 10000 $0.2812
    Buy Now
    Win Source Electronics IPD33CN10NG 80,000
    • 1 -
    • 10 -
    • 100 $1.1625
    • 1000 $0.975
    • 10000 $0.975
    Buy Now
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IDP33CN10NG 18 2
    • 1 -
    • 10 $2.25
    • 100 $2.25
    • 1000 $2.25
    • 10000 $2.25
    Buy Now

    33CN10N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    33CN10N

    Abstract: IPP35CN10N 34cn
    Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original
    IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N PG-TO263-3 PG-TO252-3 33CN10N 34cn PDF

    DIODE D27

    Abstract: 2SC3115-TBD27 35CN10N
    Contextual Info: IPI35CN10N G OptiMOS 2 Power-Transistor IPB35CN10N G 33CN10N G IPP35CN10N G 33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original
    IPB35CN10N IPI35CN10N IPP35CN10N IPD33CN10N IPU33CN10N DIODE D27 2SC3115-TBD27 35CN10N PDF

    33CN10N

    Abstract: IPP35CN10N IEC61249-2-21 IPB34CN10N G
    Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original
    IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N IEC61249-2-21 PG-TO263-3 33CN10N IEC61249-2-21 IPB34CN10N G PDF

    Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 33 mW ID 27 A • Very low on-resistance R DS(on)


    Original
    IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N IEC61249-2-21 PG-TO263-3 PDF

    33CN10N

    Abstract: to262 pcb footprint IPP35CN10N IPD33CN 34cn 33cn10 34CN10N 35CN10
    Contextual Info: OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original
    IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N PG-TO263-3 PG-TO252-3 33CN10N to262 pcb footprint IPD33CN 34cn 33cn10 34CN10N 35CN10 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original
    B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    33cn10n

    Abstract: DIODE D27 IPD33CN10N D27D27 35CN10N d804 IPP35CN10N marking 27.A 2SC3115-TBD27
    Contextual Info: IPI35CN10N G OptiMOS 2 Power-Transistor IPB35CN10N G 33CN10N G IPP35CN10N G 33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 34 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original
    IPB35CN10N IPI35CN10N IPD33CN10N IPP35CN10N IPU33CN10N 33cn10n DIODE D27 D27D27 35CN10N d804 marking 27.A 2SC3115-TBD27 PDF

    33CN10N

    Abstract: D27D27 33cn10 IPD33CN10N
    Contextual Info: IPI35CN10N G OptiMOS 2 Power-Transistor IPB34CN10N G 33CN10N G IPP35CN10N G 33CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 33 mΩ ID 27 A • Very low on-resistance R DS(on)


    Original
    IPB34CN10N IPI35CN10N IPP35CN10N IPD33CN10N IPU33CN10N 33CN10N D27D27 33cn10 PDF