340MJ Search Results

Intersil ignition IGBT

Abstract: 350VVGE
Contextual Info: HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet September 2000 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs Title This N-Channel IGBT is a MOS gated, logic level device GT1 which is intended to be used as an ignition coil driver in 4N4 automotive ignition circuits. Unique features include an

IRF044SM

Contextual Info: SEME IRF044SM LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 60V 34A 0.040W FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF

Intersil ignition IGBT

Contextual Info: HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet September 2000 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs Title This N-Channel IGBT is a MOS gated, logic level device GT1 which is intended to be used as an ignition coil driver in 4N4 automotive ignition circuits. Unique features include an

6718v

Abstract: IRF044
Contextual Info: IRF044 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)

IRFN5210

Contextual Info: IRFN5210 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6

diode IN 34A

Abstract: irfxxx
Contextual Info: SEME IRFN044 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 1.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 60V 34A Ω 0.040Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF

Contextual Info: IRF044 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)

to276

Contextual Info: SEME IRF044SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

IRFN5210

Abstract: IRF5210SMD
Contextual Info: IRFN5210 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6

IRF044

Contextual Info: IRF044 SEIN/IE LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET . _ 3ajsg.S73i 30.^0 (1 ’ 97) 30.15(i.iaf) i r.13(O.C75I ! (U.&55) I TS(0.tsi) V DSS 60V 1D(cont) 44A 7 è 1'; 2- dia. 2OK». ,-J ^D S (on) - â à

diode IN 34A

Abstract: IRF044SMD
Contextual Info: SEME IRF044SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

Contextual Info: n il É tti IN I IRF044 SEM E LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET V DSS 60V ID(cont) 44A 0.028Q ^D S (on) FEATURES M 20.32 (0.800) * 118.80 a an in i a <w (0.740) • HERMETICALLY SEALED T O -3 METAL PACKAGE ^ • SIMPLE DRIVE REQUIREMENTS

IRF044SM

Contextual Info: Illl E ^ i Illl SEME IRF044SM LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 4- V Dss 60V ^D(cont) 34A 3.0 ,r<” 3.5 •4 ► 0.25 I 2.0 0 .0 4 0 0 RpS(on) v r t1 1 ITT-1- FEATURES 3 • HERMETICALLY SEALED SURFACE MOUNT PACKAGE

Intersil ignition IGBT

Abstract: 14N41 555 igbt driver HGT1S14N41G3VLT HGT1S14N41G3VLS HGTP14N41G3VL TB334
Contextual Info: [ /Title HGT1 S14N4 1G3V LS, HGTP 14N41 G3VL /Subjec t (14A, 410V NChann el, Logic Level, Voltag e Clampi ng IGBTs ) /Autho r () /Keyw ords (14A, 410V NChann el, Logic Level, Voltag e Clampi ng IGBTs, HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet September 2001

RAD-HARD igbt

Abstract: transformers 14 H 1a 380 v radiation hardened IGBT Intersil ignition IGBT BTS 425 bts 425 l1 Rad Hard in Fairchild for Diodes Rad Hard in Fairchild for MOSFET 14N4 ASTRO 211 MOSFET
Contextual Info: HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet September 2000 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs Title This N-Channel IGBT is a MOS gated, logic level device GT1 which is intended to be used as an ignition coil driver in 4N4 automotive ignition circuits. Unique features include an

Contextual Info: S EM E IRF044SMD LA B MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

Contextual Info: S EM E IRFN044SMD LA B MECHANICAL DATA N–CHANNEL POWER MOSFET VDSS ID cont RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 )

Contextual Info: Illl W . mi SEME IRFN044 LAB MECHANICAL DATA Dim ensions in mm inches N-CHANNEL POWER MOSFET 60V 34A 0.040ft VDSS 11.5 0.25 I D(cont) 3.0 ^D S (on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

HGT1S14N41G3VLS

Abstract: HGT1S14N41G3VLS9A HGTP14N41G3VL TB334 intersil ignition Intersil ignition IGBT
Contextual Info: HGT1S14N41G3VLS, HGTP14N41G3VL TM Data Sheet September 2000 File Number 4887 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs Features This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in

HGT1S14N41G3VLS

Abstract: HGT1S14N41G3VLS9A HGTP14N41G3VL TB334 ignition coil
Contextual Info: HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet December 2001 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs Features This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an

Contextual Info: 1111 E^E INI SEM E IRF044 LAB MECHANICAL DATA D im ensions in m m inches N-CHANNEL POWER MOSFET 3 9 .9 5 ( 1 .5 7 3 ) 3 0 .4 0 ( 1 . 1 97 ) 30 .1 5 ( 1 . 1 87 ) 17.15 ( 0 . 6 7 5 ) 16.64 ( 0 .6 5 5 ) V DSS D(cont) R DS(on) 60V 44A 0.028Í2 FEATURES • HERMETICALLY SEALED TO-3 METAL

IRFN044SMD

Contextual Info: SEME IRFN044SMD LAB MECHANICAL DATA N–CHANNEL POWER MOSFET VDSS ID cont RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in .