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    Bimba Manufacturing Company LT-5034-DBM

    Thruster, Linear Thruster Cylinder ; 2-1/2in Bore ; Stroke: 34 in; Double Actin | Bimba LT-5034-DBM
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    RS LT-5034-DBM Bulk 5 Weeks 1
    • 1 $362.59
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    Bimba Manufacturing Company LT-3134-DBM

    Thruster, Linear Thruster Cylinder ; 2in Bore ; Stroke: 34 in; Double Acting ; | Bimba LT-3134-DBM
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    RS LT-3134-DBM Bulk 5 Weeks 1
    • 1 $313.34
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    Panasonic Electronic Components WM-034DBM

    EOL!LTB(d/m/y):31/03/04;LTS:30/06/04; REPLAC.: (Alt: 3074457345656002552)
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    Avnet Abacus WM-034DBM 143 Weeks 100
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    34DBM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Teledyne Wireless

    Abstract: No abstract text available
    Text: Product Information ISO 9001 CERTIFIED 6001 5.150 to 5.300 GHz GaAs MMIC Hiperlan Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ +23 dBm Output Power @1 dB Gain Compression 23 dB Minimum Small Signal Gain 34dBm Third Order Intercept Point Surface Mount, Thermally Optimum


    Original     		PDF 34dBm 33dBm. Teledyne Wireless

    DB35T

    Abstract: mitsubishi lot code RF MOSFET MODULE MOSFET AMPLIFIER 3 Stage For MOBILE RADIO 869 MHz transistor marking zg Mitsubishi transistor rf final H46S RA02M8087MD RA02M8087MD-101 MOSFET AMPLIFIER For MOBILE RADIO 869 MHz
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA02M8087MD RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the


    Original     		PDF RA02M8087MD 806-869MHz 34dBm RA02M8087MD 34dBm 16dBm 300mA -26dBc DB35T mitsubishi lot code RF MOSFET MODULE MOSFET AMPLIFIER 3 Stage For MOBILE RADIO 869 MHz transistor marking zg Mitsubishi transistor rf final H46S RA02M8087MD-101 MOSFET AMPLIFIER For MOBILE RADIO 869 MHz

    spf-5043

    Abstract: SPF5043Z SPF 5043Z SPF5043 spf-5043z amplifier 900mhz
    Text: Preliminary SPF-5043Z 500-2500 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5043Z is a fully matched ultra-low noise, high linearity MMIC LNA designed for 500-2500 MHz operation. It delivers 1.0dB noise figure and 34dBm OIP3 at 1900 MHz 5V,45mA . It is housed in an industry standard


    Original     		PDF SPF-5043Z SPF-5043Z 34dBm OT-343 SPF5043Z 900MHz 900MHz 34dBm 1900MHz spf-5043 SPF 5043Z SPF5043 amplifier 900mhz

    5W 47 ohm

    Abstract: No abstract text available
    Text: 3.5 GHz InGaP HBT 5W Linear Power Amplifier CHV2711-QJ June 2006 - Rev 30-Jun-06 Features Internal Pre-matching Single Supply operation Power Gain 9.5dB Intermodulation Distortion -30dBc @ 34dBm per tone ESD Protection on board Current Control for multiple applications


    Original     		PDF 30-Jun-06 -30dBc 34dBm CHV2711-QJ CHV2710 CHV2711 5W 47 ohm

    walkie-talkie schematic

    Abstract: No abstract text available
    Text: RF6886 RF68863.6V, 100MHz to 1000 MHz Linear Power Amplifier 3.6V, 100MHz TO 1000MHz LINEAR POWER AMPLIFIER Features  100MHz to 1000MHz  Single 3.6V Power Supply  34dBm OP1dB   36.5dBm Saturated Output Power >50% Efficiency 23 22 21 20 Vreg1


    Original     		PDF RF6886 RF68863 100MHz 1000MHz 34dBm 1000MHz 24-Pin, DS140303 walkie-talkie schematic

    walkie-talkie schematic

    Abstract: RF6886 RF6886PCK-411 450MHz CDMA Handset Circuit Diagram RF6886PCK-410 walkie-talkie main components walkie-talkie diagram walkie-talkie 900Mhz 433MHZ amplifier schematic RF6886SR
    Text: RF6886 RF68863.6V, 100MHz to 1000 MHz Linear Power Amplifier 3.6V, 100MHz TO 1000MHz LINEAR POWER AMPLIFIER Features  100MHz to 1000MHz  Single 3.6V Power Supply  34dBm OP1dB   36.5dBm Saturated Output Power >50% Efficiency 23 22 21 20 Vreg1


    Original     		PDF RF6886 RF68863 100MHz 1000MHz 34dBm 1000MHz 24-Pin, 450MHz walkie-talkie schematic RF6886 RF6886PCK-411 450MHz CDMA Handset Circuit Diagram RF6886PCK-410 walkie-talkie main components walkie-talkie diagram walkie-talkie 900Mhz 433MHZ amplifier schematic RF6886SR

    100C

    Abstract: TGA1141
    Text: Advance Product Information Feb 4, 2000 33-36 GHz 2W Power Amplifier TGA1141 Key Features • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ 1.5A Primary Applications • Military Radar Systems


    Original     		PDF TGA1141 33dBm 34dBm 880mA 0007-inch 100C TGA1141

    NN12

    Abstract: P35-4232-C06-200
    Text: P35-4232-C06-200 GaAs MMIC 2W SPDT REFLECTIVE SWITCH, DC - 6GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • Positive or negative voltage operation • High compression point; 34dBm typ


    Original     		PDF P35-4232-C06-200 34dBm P35-4232-C06-200 463/SM/00151/200 NN12

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information February 27, 2003 33-36 GHz 2W Power Amplifier TGA1141-EPU Key Features • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat


    Original     		PDF TGA1141-EPU 33dBm 34dBm 880mA 0007-inch

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information August 26, 2002 33-36 GHz 2W Power Amplifier TGA1141-EPU Key Features • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat


    Original     		PDF TGA1141-EPU 33dBm 34dBm 880mA 0007-inch

    Untitled

    Abstract: No abstract text available
    Text: RFSW6223 RFSW6223 F9999 DPDT SYMMETRIC SWITCH 10MHZ TO 6000MHZ NC NC V2 Package: QFN, 12-Pin, 3.0mmx3.0mm 9 8 7 Features Symmetric DPDT  Low Loss: 0.65dB 2GHz  Isolation: 33dB (2GHz)  High IP3: 56dBm  High P1dB: 34dBm at 3V  Positive Logic Control


    Original     		PDF RFSW6223 F9999 RFSW6223 10MHZ 6000MHZ 12-Pin, 6000MHz 56dBm 34dBm

    VP 1176

    Abstract: VP 1176 datasheet TGF4250-EEU TriQuint Semiconductor bvgs VP+1176
    Text: Product Data Sheet March 16, 2001 Discrete HFET TGF4250-EEU Key Features and Performance • • • • • • 4800µm x 0.5 µm FET Nominal Pout of 34dBm at 8.5GHz Nominal Gain of 8.5dB at 8.5GHz Nominal PAE of 53% at 8.5GHz Suitable for high reliability applications


    Original     		PDF TGF4250-EEU 34dBm TGF4250-EEU VP 1176 VP 1176 datasheet TriQuint Semiconductor bvgs VP+1176

    EUDYNA

    Abstract: FRM5W232FY
    Text: InGaAs-PIN/Preamp Receiver FRM5W232FY FEATURES • 5-pin coaxial ROSA Receiver Optical Subassembly with LC receptacle • InGaAs-PIN PD with 3.3V pre-amplfier • Wide Band: 2.2GHz • Data rate up to 2.7Gb/s • Differential Output • High Sensitivity: -34dBm typ.


    Original     		PDF FRM5W232FY -34dBm 550nm coa4888 EUDYNA FRM5W232FY

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER MMIC AMPLIFIER T M D 1925-3 MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pr e l i m i n a r y FEATURES n Suitable for Digital Communications n High Power P1dB=34dBm min @ 1.9 to 2.5GHz n Low Intermodulation Distortion n High Gain G1dB=27dB(min) @ 1.9 to 2.5GHz


    Original     		PDF 34dBm

    TMD2121-3A

    Abstract: No abstract text available
    Text: MICROWAVE POWER MMIC AMPLIFIER TMD2121-3A TMD2121-3A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ Suitable for W-CDMA „ High Gain G1dB=27dB min „ High Power P1dB=34dBm(min) „ Low Intermodulation Distortion ABSOLUTE MAXIMUM RATINGS ( Ta= 25°°C )


    Original     		PDF TMD2121-3A 34dBm TMD2121-3A

    FPD750SOT89

    Abstract: No abstract text available
    Text: EB750SOT89BB FPD750SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • 23.5dBm Output Power • 23dB Gain ¥ 0.6dB Noise Figure ¥ 34dBm OIP3 measured at 10dBm per tone ¥ Bias Vd = 5V, Id = 100mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original     		PDF EB750SOT89BB FPD750SOT89 34dBm 10dBm 100mA, FPD750SOT89; 30mil LL1608

    TMD5872-2

    Abstract: No abstract text available
    Text: MICROWAVE POWER MMIC AMPLIFIER TMD5872-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA PRELIMINARY FEATURES n High Power P1dB=34dBm TYP. n High Gain G1dB=28dB(TYP.) n High Power Added Efficiency ηadd=21%(TYP.) n Broadband Operation f=5.8-7.2GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25oC)


    Original     		PDF TMD5872-2 34dBm 11pin: 000pF TMD5872-2

    walkie-talkie schematic

    Abstract: RF6886 RF6886PCK-410 RF6886PCK-411 450MHz CDMA Handset Circuit Diagram walkie-talkie circuit walkie-talkie main components walkie-talkie 900Mhz RF68863 3000mA power bank
    Text: RF6886 RF68863.6V, 100MHz to 1000MHz Linear Power Amplifier 3.6V, 100MHz TO 1000MHz LINEAR POWER AMPLIFIER Features Vcc 100MHz to 1000MHz  Single 3.6V Power Supply  34dBm OP1dB  Vreg1 22 21 20 19 1 18 RFout Bias   23 NC 24 NC VBias Pwr Ref Package: QFN, 24-Pin, 4mmx4mm


    Original     		PDF RF68863 100MHz 1000MHz RF6886 24-Pin, 34dBm walkie-talkie schematic RF6886 RF6886PCK-410 RF6886PCK-411 450MHz CDMA Handset Circuit Diagram walkie-talkie circuit walkie-talkie main components walkie-talkie 900Mhz 3000mA power bank

    Untitled

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456367589 123456367589 RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the


    Original     		PDF 806-869MHz 34dBm RA02M8087MD 34dBm 300mA -26dBc 31dBm RA02M8087MD

    frm5w23

    Abstract: No abstract text available
    Text: InGaAs-APD/Preamp Receiver FRM5W232HZ FEATURES • InGaAs-APD with 3.3V pre-amplifier • Wide Band: 2.2GHz • Data rate up to 2.7Gb/s • Differential Output • High Sensitivity: -34dBm typ. • 5-pin coaxial package • Operating Case Temperature: -40°C to 85°C


    Original     		PDF -34dBm FRM5W232HZ 550nm FRM5W232HZ frm5w23

    InGaAs apd photodiode

    Abstract: EUDYNA FRM5W232HZ
    Text: InGaAs-APD/Preamp Receiver FRM5W232HZ FEATURES • InGaAs-APD with 3.3V pre-amplifier • Wide Band: 2.2GHz • Data rate up to 2.7Gb/s • Differential Output • High Sensitivity: -34dBm typ. • 5-pin coaxial package • Operating Case Temperature: -40°C to 85°C


    Original     		PDF FRM5W232HZ -34dBm 550nm FRM5W232HZ in4888 InGaAs apd photodiode EUDYNA

    DBC3

    Abstract: No abstract text available
    Text: 2nd 3rd Harmonic vs. Pout MAX3509 65MHz 2:1 Pin=34dBmV 70 65 60 dBc 55 dbc2 dbc3 50 45 40 35 30 57 59 61 63 65 Pout dBc 67 69 71


    Original     		PDF MAX3509 65MHz 34dBmV DBC3

    JAN 6418

    Abstract: CHA5350-99F
    Text: CHA5350-99F 17-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5350-99F is a four stage monolithic MPA that typically provides an output power of 26.5dBm at 1dB gain compression associated to a high IP3 output of 34dBm. It is designed for a wide range of


    Original     		PDF CHA5350-99F 17-24GHz CHA5350-99F 34dBm. 17-24GHz 34dBm DSCHA53503018 JAN 6418

    CGY 8 pin

    Abstract: 81541
    Text: SIEMENS CGY 0918 GaAs MMIC • • • • Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package Power ramp control ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


    OCR Scan     		PDF 35dBm 34dBm Q62702G0077 577ms 15ity CGY 8 pin 81541