35 A 35 V BJT Search Results
35 A 35 V BJT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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OPA2863DGKEVM |
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Evaluation module for OPA2863 very low-power BJT-input, wide-supply range, RRIO high-speed op amp |
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LM3485Q1MM/NOPB |
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Automotive Grade 4.5-35V, Hysteretic Non-Synchronous PFET Buck Controller 8-VSSOP -40 to 125 |
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LM3485MMX/NOPB |
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4.5-35V, Hysteretic Non-Synchronous PFET Buck Controller 8-VSSOP -40 to 125 |
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LM3485MM/NOPB |
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4.5-35V, Hysteretic Non-Synchronous PFET Buck Controller 8-VSSOP -40 to 125 |
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TPSM846C24MOLR |
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4.5V to 15V Input, 0.35V to 2.0V Output, 35A Power Module 59-QFM -40 to 105 |
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35 A 35 V BJT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2N3462 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)70n¥ @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V).35 @I(C) (A) (Test Condition)5.0m |
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2N3462 Freq10M | |
2SD1077Contextual Info: 2SD1077 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2SD1077 | |
Contextual Info: 2N1469+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N1469 | |
2SC1737Contextual Info: 2SC1737 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2SC1737 Freq150M | |
Contextual Info: 2N1231 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m |
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2N1231 | |
Contextual Info: 2N1026A Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).02u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N1026A | |
Contextual Info: 2N1469 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N1469 | |
Contextual Info: QD204-78 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)20m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100pØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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QD204-78 Freq100M | |
Contextual Info: 2N1230 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m |
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2N1230 | |
2SC1213-CContextual Info: 2SC1213C Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)500m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2SC1213C 2SC1213-C | |
Contextual Info: 2N1025+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N1025 | |
Contextual Info: 2N1241 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m |
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2N1241 | |
Contextual Info: 2N325 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)100õ I(CBO) Max. (A).50mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N325 Freq150k | |
Contextual Info: 2SC2405 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2SC2405 | |
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2N1025Contextual Info: 2N1025 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N1025 | |
Contextual Info: 2N1026 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N1026 | |
Contextual Info: 2N1240 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)12 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m |
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2N1240 | |
Contextual Info: 2N3469 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)35 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)200# I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)1.0 |
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2N3469 Freq20M | |
Contextual Info: 2N938 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)5.0m |
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2N938 | |
Contextual Info: 2SC284 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)70 I(C) Max. (A)100m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC) I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.35 h(FE) Max. Current gain. |
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2SC284 Freq200M | |
Contextual Info: PE1003 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)35â V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)200nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain. |
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PE1003 Freq200M | |
Contextual Info: 2SC1162D Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.160 h(FE) Max. Current gain.320 |
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2SC1162D Freq180M StyleTO-126 | |
Contextual Info: 2SC2639 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)17 V(BR)CBO (V)35 I(C) Max. (A)3.5 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain. |
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2SC2639 Freq300M Code4-28 | |
2n1009Contextual Info: 2N1009 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35ã V(BR)CBO (V)35 I(C) Max. (A)300m Absolute Max. Power Diss. (W)400m# Maximum Operating Temp (øC)85þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain. |
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2N1009 |