2N325 Search Results

2N3251

Abstract: New England Semiconductor
Contextual Info: 0/V E F ^ IP 2N3251 NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL TRANSISTOR • H IG H V O L T A G E • H IG H C U R R E N T G A IN • H IG H FR E Q U E N C Y M A X IM U M R A TIN G S SY M BO L VcEO CO >U R A TIN G S Collector-Emitter Voltage Collector-Base Voltage

250M

Abstract: 2N3250A
Contextual Info: 2N3250A Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

2N3725

Abstract: complement to 2n3700 2N3253 TA100-F FTS03904 curve set t144 2N3700 2N3724 test 2N3700 tl 4013
Contextual Info: FAIRCHILD SEMICONDUCTOR _ A4 _ DE §341^1,74 GOSTSSl 3 FAIRCHILD 2N3253 A Schlumberger Company NPN Switching Type ABSOLUTE MAXIMUM RATINGS Note 1 Temperatures Storage Temperature -65° C to 200° C Operating Junction Temperature 200° C Power Dissipation (Notes 2 & 3)

2N3025

Abstract: 2N3026 2N3021 2N3022 2N3023 2N3024
Contextual Info: SOLID STATE DEVICES, INC PNP POWER & HIGH VOLTAGE Device Type 2N2983 2N2984 2N2985 2N2986 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3250 2N3250A 2N3251 2N3251A 2N3467 2N3468 2N3485 2N3485A 2N3486 2N3486A 2N3634 2N3635 2N3636 2N3637 2N3660 2N3661 2N3719 2N3720

250M

Abstract: 2N3250X
Contextual Info: 2N3250X Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

2n3253

Abstract: 2N3253 JANTX
Contextual Info: 2N3253 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

2N3261

Abstract: 2N3261A 2N3251A 2n3250A 2n3251
Contextual Info: 2N3250, A 2N3251, A MAXIMUM RATINGS Sym bol Rating Collector-Emltter Voltage 2N32E0 2N3250A 2N3251 2N3251A V C EO 40 Collector-Base Voltage V cB O 50 Emlt1er»Bass Voltage vebo Vdc 60 Vdc 5.0 Vdc Collector Current ic 200 m Adc Total Device Dissipation @ T^ = 25°C

2n3251a

Contextual Info: 2N3251A Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integ. Page 1 of 2 Enter Your Part # Home Online Store 2N3251A Availability Buy 2N3251A at our online store! Diodes Transistors Thyristors Category » Transistors Class » Transistors; Bipolar; Si PNP Low-Pwr HF

2N3251

Contextual Info: 2N3251 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3251 Availability Online Store

Contextual Info: DUAL PNP SWITCHING TRANSISTORS 2N3251DCSM • Dual Silicon Planer PNP Transistors • Hermetic Ceramic Surface Mount Package • Designed For Small Signal, General Purpose and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS Each Side, TA = 25°C unless otherwise stated

Contextual Info: 2N3251A Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

2N3251A

Abstract: 2N3250A
Contextual Info: TECHNICAL DATA 2N3250A JAN, JTX, JTXV 2N3251A JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/323 PNP SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

Contextual Info: 2N3250 2N3251,A* M AXIMUM RATINGS Symbol 2N3250 2N3251 2N3251A v CEO -4 0 -6 0 Vdc C o lle c to r-B a s e V o lta g e VCBO -5 0 -6 0 V dc E m itte r-B a s e V o lta g e Rating C o lle c to r -E m itte r V o lta g e Unit vebo -5 .0 Vdc C o lle c to r C u rre n t

2n3251a

Contextual Info: 2N3250 2N3251 2N3250A 2N3251A SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3250, 2N3251 series devices are silicon PNP transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER

Contextual Info: 2N3250A+JANTXV Transistors Si PNP LP HF BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nØ÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50

2N3250CSM

Contextual Info: SEME 2N3250CSM LAB GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) FEATURES 3 2 • SILICON PLANAR EPITAXIALPNP TRANSISTOR 0.76 ± 0.15

TO-18 amps pnp transistor

Abstract: BC107 BC108
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029

250M

Abstract: 2N3250DCSM
Contextual Info: 2N3250DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

MPQ3906

Abstract: 106V 2n3250 bsc 2N3906 die 2N3250 2N3905 2N3906 2n3906 equivalent transistor MPQ3906 equivalent
Contextual Info: MPQ3906 SILICON QUAD DUAL-IN-LINE PNP SILICON ANNULAR AMPLIFIER/SWITCH TRANSISTOR QUAD DUAL-IN-LINE PNP SILICON AMPLIFIER/SWITCH TRANSISTOR . .designed for low current amplifier and switching applications. Transistors Similar to 2N3905, 2N3906, 2N3250 Low CoHector-Emitter Saturation Voltage —

Contextual Info: m m w aien o w n , tvtA m M icro se m i 5oD Pleasant S t Watertown, MA 02172 PH: 817 926-0404 FAX: (617)924-1235 2N3251A Features • • • • 60 Volts 200 mAmps M e e ts M IL -S -1 9500/323 C o lle c to r-B a s e V o lta g e 6 0 V C o lle c to r Current: 2 0 0 m A

Contextual Info: 2N3253 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N3251A Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

Contextual Info: 2N3252 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N3251CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)