355 MOSFET Search Results

D2Pak Package dimensions

Abstract: MOSFET 355 2X transistor transistor 355 355 data
Contextual Info: Super-D 2Pak Package Outline 4.0 [.157] 3.0 [.119] 10.9 [.429] 9.9 [.390] 9.02 [.355] 8.65 [.341] 0.9 [.035] 0.7 [.028] 3 3 15.2 [.598] 14.2 [.560] 13.0 [.511] 12.0 [.473] 1 9.2 [.362] 9.0 [.355] 2 1 2X 2.54 [.100] 1.2 [.047] 0.8 [.032] 0.25 [.010] 2X B A

Contextual Info: Analog Power AM5400N N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed • Small Footprint DFN3x2-8L package VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 280 @ VGS = 10V 355 @ VGS = 4.5V

Contextual Info: Analog Power AM2370N N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 280 @ VGS = 10V 355 @ VGS = 4.5V ID(A) 1.5 1.3 Typical Applications:

MOSFET

Abstract: 2N6845
Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm (inches) P-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 864(034) 9 40 (0 37) 801 (0315) 9,01 (0 355)

Contextual Info: Analog Power AM20N10-250D N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 280 @ VGS = 10V 355 @ VGS = 4.5V ID(A) 11 10 Typical Applications:

CS16

Abstract: ctn 4.7 RM-1 datasheet ITO-220 CD16 CS14 CS28 cx sot-353 DFN33 SOT-26 ci
Contextual Info: Packing of IC & MOSFET TUBE PACK Outline Code Outline Packing Code Static electricity bag 靜電袋 Box (PCS) Box # Box Size (mm) CTN # CTN (PCS) CTN Size (mm) G.W. (kgs) N.W. (kgs) CZ TO-220 (50pcs/tube) C0 1,000 2,000 VENDOR 600*166*96 VENDOR 8,000 630*355*233

CFL inverter circuit schematic diagram

Abstract: uv Photocell LF156 HE LF155 LF157 LF257 LF355 LF357 rs 355 integrated circuits LF157A
Contextual Info: r z 7 S G S -T H O M S O N Ê l f i 55/255/355 SERIES J-FET INPUT SINGLE OPERATIONAL AMPLIFIERS • REPLACE HYBRID AND MODULE FET OP AMPs. RUGGED J-FETs ALLOW BLOW-OUT FREE HANDLING COMPARED WITH MOSFET INPUT DEVICES ■ EXCELLENT FOR LOW NOISE APPLICATIONS

lucent DC-DC POWER MODULE

Contextual Info: ALH25AF48 N Series Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V&3.3V Dual Output 100W DC-DC Converter (Rev01) TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44-(0)1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662 852-2402-4426 -1Publishing Date: 20020624

k 3531 transistor

Contextual Info: ALH25AF48N Half-brick Series Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V/3.3V Dual Output 100W DC-DC Converter Rev02 TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44- 0 1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662 852-2402-4426 Publishing Date: 20040928

k 3531 transistor

Contextual Info: ALH25AF48 Half-brick Dual Output Series Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V/3.3V Output 100 Watt DC-DC Converter TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44- 0 1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662 852-2402-4426 www.astec.com

IXFD21N100F-8F

Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
Contextual Info: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005

IXFH32N50Q equivalent

Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
Contextual Info: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω

NEM0899F01-30

Abstract: BL 130 301
Contextual Info: VHF Silicon MOSFET for Broadcast/Base Station T Y H Ç tt. ¡m t :fittaafar • iw u y i I V»* : ■m' w h iá * NEM0899F01-301 NEM0995F01-301 new> F011 F011 460 to 860 820 to 960 Poirr P out dBm (W) Gain Efficienc (dBm) (%) 30 AB 50 100 12 30 AB 49.8 95

SSD20N10-250D

Abstract: MosFET ssd20n10 250d
Contextual Info: SSD20N10-250D N-Ch Enhancement Mode Power MOSFET 11A, 100V, RDS ON 280mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFETs utilize a high cell density trench

4425 8-pin

Abstract: 4425 mosfet mosfet 4423 NCP4425DWR2 NCP4423 NCP4423DWR2 NCP4423P NCP4424 NCP4424DWR2 NCP4424P
Contextual Info: NCP4423, NCP4424, NCP4425 3 A Dual High-Speed MOSFET Drivers The NCP4423/4424/4425 are MOSFET drivers that are capable of giving reliable service in demanding electrical environments. Although primarily intended for driving power MOSFETs, these drivers are well–suited for driving other loads capacitive, resistive,

HP4432B

Abstract: UPF21010
Contextual Info: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.110 to 2.170 GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers

Contextual Info: NCP4423, NCP4424, NCP4425 3 A Dual High-Speed MOSFET Drivers The NCP4423/4424/4425 are MOSFET drivers that are capable of giving reliable service in demanding electrical environments. Although primarily intended for driving power MOSFETs, these drivers are well–suited for driving other loads capacitive, resistive,

mosfet 4423

Abstract: 4425 8 P-N mosfet NCP4423 NCP4423DWR2 NCP4423P NCP4424 NCP4424DWR2 NCP4424P NCP4425 NCP4425DWR2
Contextual Info: NCP4423, NCP4424, NCP4425 3 A Dual High-Speed MOSFET Drivers The NCP4423/4424/4425 are MOSFET drivers that are capable of giving reliable service in demanding electrical environments. Although primarily intended for driving power MOSFETs, these drivers are well–suited for driving other loads capacitive, resistive,

POWER MOSFET 4600

Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90
Contextual Info: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X

4425 mosfet

Abstract: mosfet 4423 TC4423 TC4424 mosfet 4425 DRIVERS high-speed power MOSFET TC4425 TC4423COE TC4423CPA MOSFET 355
Contextual Info: TC4423 TC4424 TC4425 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS 2 FEATURES GENERAL DESCRIPTION • ■ ■ The TC4423/4424/4425 are higher output current versions of the new TC4426/4427/4428 buffer/drivers, which, in turn, are improved versions of the earlier TC426/427/428

4425 8 P-N mosfet

Abstract: 4425 mosfet DRIVERS high-speed power MOSFET Matching MOSFET Drivers to MOSFETs mosfet 4423 TC4424 transistor mosfet 4425 4425 8-pin TC4425 TC4423
Contextual Info: 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4423 TC4423 TC4424 TC4424 TC4425 TC4425 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ The TC4423/4424/4425 are higher output current versions of the new TC4426/4427/4428 buffer/drivers, which, in

TC4425

Abstract: TC4423 TC4423COE TC4424 4425 8-pin mosfet 4423 4425 mosfet mm73a
Contextual Info: 3A DUAL HIGH-SPEED MOSFET DRIVERS TC4423 TC4423 TC4424 TC4424 TC4425 TC4425 3A DUAL HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ The TC4423/4424/4425 are higher output current versions of the new TC4426/4427/4428 buffer/drivers, which, in

ultrarf

Abstract: UPF18045-159 2200PF 470PF 47UF MBD701 MMBTA64 1UF 50V SMT CASE C diode gp 805
Contextual Info: UPF18045-159 45W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a typical output power of 50 W PEP for high peak-to-average signals , this device is well suited in

AON6240

Abstract: 40ida
Contextual Info: AON6240 40V N-Channel MOSFET General Description Product Summary VDS The AON6240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of