IXFH40N50Q Search Results

Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs VDSS = 500 V ID25 = 40 A RDS on = 0.135 Ω IXFH40N50Q2 IXFK40N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C

IXFH40N50Q2

Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs IXFH40N50Q2 VDSS = 500 V = 40 A ID25 RDS on = 0.14 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr IXFH40N50Q2 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol Test Conditions 500V 40A Ω 160mΩ 250ns TO-247 (IXFH) Maximum Ratings VDSS TJ = 25°C to 150°C

IXFH40N50Q2

Contextual Info: HiPerFETTM Power MOSFETs IXFH40N50Q2 VDSS = 500 V = 40 A ID25 RDS on = 0.16 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

IXFH40N50Q2

Abstract: IXFK40N50Q2
Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs VDSS = 500 V ID25 = 40 A RDS on = 0.14 Ω IXFH40N50Q2 IXFK40N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C

40n50

Abstract: IXFH40N50Q2 IXFH40N50 F40N
Contextual Info: HiPerFETTM Power MOSFETs Q2-Class IXFH40N50Q2 VDSS = = ID25 RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol Test Conditions 500V 40A Ω 160mΩ 250ns TO-247 (IXFH) Maximum Ratings VDSS TJ = 25°C to 150°C

IXTD08N100P-1A

Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

IXFD21N100F-8F

Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
Contextual Info: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005