35B DIODE Search Results

Contextual Info: H U^i5 B 35B 300Vin / 3.3Vout / 75Watts Features Model Number V300C3V3C75A DC-DC Converter Module • DC input range: 180 - 375V • Input surge withstand: 400V for 100ms • DC output: 3.3V 2.5V with external trim * • Programmable output: 10 to 110% • Regulation: +0.4% no load to full load

2SK2235

Abstract: DDS3400 44t transistor DDS34
Contextual Info: TOSHIBA TDTTSSO DDS 3 4 0 0 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2235 35b SILICON N CHANNEL MOS TYPE tt-M OSIII 5 2SK2235 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: • 1R7MS03 G0Q04Ô0 35b ■ : « i .* r o f « i r Product Specifications January 1996 CMM2306 SOOto 2700 MHz Broadband Driver Amplifier 1 o f 4 Features □ +17.5 dBm Output Power □ Low Current: 70 mA, Typ. □ 800 - 2700 MHz Operation □ Single +3V to +6V Supply

74HC245

Contextual Info: • 5bE D 7^237 0040072 35b fî. T - f Z - Z Z - v T M54HC245/640/643 M74HC245/640/643 S G S -T H O M S O N £ ISGTH iy OCTAL BUS TRANSCEIVER 3-STATE HC245 NON INVERTING, HC640 INVERTING, HC643 INVERTING/NON INVERTING PRELIMINARY DATA S G S-THOMSON HIGH SPEED

ZENER 34b

Abstract: zener diode 33B marking 43b zener 35b 52B zener 46B zener Zener diode 81A MARKING 46B 47B diode 43B diode
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B

Contextual Info: SIEMENS BAR66 Silicon PIN Diode Array • • • Surge protection device Two PIN diodes, series configuration Designed for surge overvoltage clamping in antiparallel connection Type Marking BAR66 PMs Ordering Code taped Pin Configuration 1 2 A1 Q62702-A1473

ZENER 34b

Abstract: 5252B 5255B zener diode 33B CMBZ52XX 43B MARKING 8f zener CMBZ-5252B 40b marking diode 43b
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B

PLC water heater plc

Abstract: G3PF225B-CTB PLC RELAY OMRON G3PF225B g3pf G32A-EA relay dc24v omron
Contextual Info: Solid State Relays with Built-in Current Transformer G3PF CSM_G3PF_DS_E_6_1 A New-concept SSR with Built-in Current Transformer. Heater Burnout and SSR Shortcircuit Failure Detection. • Built-in Current Transformer CT helps reduce wiring steps. • Detects the burnout of any one of a group of heaters.

Contextual Info: Solid State Relays with Built-in Current Transformer G3PF CSM_G3PF_DS_E_7_2 A New-concept SSR with Built-in Current Transformer. Heater Burnout and SSR Shortcircuit Failure Detection. • Built-in Current Transformer CT helps reduce wiring steps. • Detects the burnout of any one of a group of heaters.

diode marking 63s SOT23

Contextual Info: SIEMENS BAT 64 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage Pin Configuration A1/A2 m nr Ordering Code Pin Configuration

G32AE

Abstract: PLC water heater plc
Contextual Info: Solid State Relays with Built-in Current Transformer G3PF CSM_G3PF_DS_E_7_1 A New-concept SSR with Built-in Current Transformer. Heater Burnout and SSR Shortcircuit Failure Detection. • Built-in Current Transformer CT helps reduce wiring steps. • Detects the burnout of any one of a group of heaters.

PLC water heater plc

Contextual Info: Solid State Relays with Built-in Current Transformer G3PF CSM_G3PF_DS_E_3_1 A New-concept SSR with Built-in Current Transformer. Heater Burnout and SSR Shortcircuit Failure Detection. • Built-in Current Transformer CT helps reduce wiring steps. • Detects the burnout of any one of a group of heaters.

Contextual Info: SFH 2212 SIEMENS INFRARED EMITTING DIODE T018PA C K A G E Prelim in ary Data Sheet P a c k a g e D im e n sio n s in m m Chip Loacation 035 0 25 Anode I.J. 1 27 Lead spacing : ée L Cathode GND 24 " T 15.0 120 FEATURES M a x im u m R a tin g s • InGaAsP/lnP PIN Photodiode

equivalent bav20

Abstract: BAV100 BAV103 BAV18 BAV19 BAV20 BAV21 DO-213AA smd BAV20 BKC Semiconductors
Contextual Info: DO-35 High Voltage Switching Diodes BAV18 thru BAV21 Applications High voltage, Fast switching silicon diodes, high performance replacement for small signal devices. Particularly useful in industrial and test equipment. Used in steering, biasing and coupling applications. Efficient switching in

Contextual Info: 3 . ¡S ^ ü Îx /W y a y I j. . i n - . / ; / j . lounting Device Surface Mounting ^ > s I -• Y Schottky Barrier Diode Twin Diode vÜ£E] OUTLINE DIMENSIONS DE10PC3 30V 10A •S M D • ¡ B Ì £ V f = 0 .4 V m & • n ''7 ^ u - ia s f f i± • D C tÜ ^ O R ffl

Contextual Info: SIEMENS 1300 nm Laser in Receptacle Package, High Power STH 51007X • • • • Designed for application in fiber-optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and

photoresistor LDR 1000

Abstract: Photoresistor photoresistor LDR Heimann LT2011 Heimann lt Diode LT 02 Siemens optocoupler IL ldr photocell Photocell LDR
Contextual Info: S I EM EN S A K T I E N G E S E L L S C H A F 47E T> fl23Sb05 4 • SIEG ~ M Ì - S I Opto-couplers Heimann op to-coupler consist of a com bi­ nation of extremely high-intensity light em it­ ting diodes LED as emitters and specific photocell as detectors. Both elements are

CMBZ-5240B

Contextual Info: 'IL CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1= ANODE 2= NC 3 = CATHODE 3.0_ ~ 2.8 0.14 0.48 538 3 2.6 2.4 _1.02 o.ar 2.00_ 1.80 0.60 0.40 Marking CMBZ5230B 31B

marking code 46B

Abstract: SMB5922B SMB5923B SMB5924B SMB5925B zener 35b SMB 234
Contextual Info: SMB5921B series Surface Mount Zener Diodes SURFACE MOUNT ZENER DIODES 3.0 WATTS P b Lead Pb -Free Features: * Glass passivated chip * Low leakage * Built-in strain relief * Low inductance * High peak reverse power dissipation * For use in stabilizing and clipping circuits with

Contextual Info: Philips Semiconductors Product specification Rectifier diodes PBYR1645B series schottky GENERAL DESCRIPTION Low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope suitable for surface

Contextual Info: Philips Semiconductors Product specification Rectifier diodes schottky barrier_ GENERAL DESCRIPTION Low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop, absence of stored

erm 38b

Abstract: 5252B
Contextual Info: CMBZ52XX series CDIL SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN nun Pin configuration 1= ANODE 2 = NC 3 = CATHODE 3.0 2.8 0.14 0.48 0.38 3 2.6 2.4 — I- T •FT 1.02 I 0.89 2 .00 _ 0,60 0.40 1.80

Contextual Info: Philips Semiconductors Product specification Rectifier diodes > \ PBYR745B series schottky barrier_ '_ GENERAL DESCRIPTION Low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope suitable for surface

h60V

Contextual Info: SCHOTTKY BARRIER DIODE FCH30A03L so a / sov FEATURES / lût liài OTO -220A B F ully M olded o D u a l D iodes - C athode C om m on o L ow F o rw a rd V o ltag e D rop O H igh S u rg e C apability 0 30 V o lts th ro u g h 60 V olts T y p e s A v ailable oTj = 150"C o p e ratio n