FLE35BOS Search Results

bts 43202

Abstract: BTS432E2-E3062A BTS 732 3H DIODE smd smd transistor jst BTS432E2 E3062A SMD code E2 thermal overload relay fas E3043 Q67060-S6202-A2
Contextual Info: • 0235bOS ODfilMTb TTT SIEMENS PROFET BTS 432 E2 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • • Load dump and reverse battery protection1 80 M_oad dump Clamp of negative voltage at output 58 V bb-VouT Avalanche Ciatnp

Q67100-H5092

Abstract: SDA 2516-5
Contextual Info: S IE M E N S Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features • • • • • • • • • • W ord-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V

tca 335 A

Abstract: tca 765 TCA335A
Contextual Info: 47E ]> • fl23SbOS □□3L b4fl 5 ■ SIEG SIEMENS AKTIENGESELLSCHAF T -1 ^ - O lSingle Operational Amplifier with Darlington Input O TCA 332 TCA 335 Features • • • • • • • • • \ Bipolar 1C High input impedance Wide common-mode range Large supply-voltage range

Contextual Info: SIEMENS 256 K x 16-Bit Dynamic RAM HYB 514171BJ-60/-70 Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-60/-70 Advanced Inform ation 262 144 w ords by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time Low Power dissipation

Contextual Info: ÔSaSbQS D D 3 2 m b 4?E ì> SIEMENS 4 • S IE G SIEMENS AKTIENGESELLSCHAF Token Bus Modem TBM SAB 82511 Advanced Information • • • • • Carrier-band modem fully compatible with IEEE 802.4 and MAP Standard 5 and 10 Mbit/s data rate using phase-coherent FSK modulation

Contextual Info: SIEMENS 1M X 72-Bit Dynamic RAM Module ECC - Module HYM 721000GS-60/-70 Prelim inary Inform ation • 1 048 576 w ords by 72-bit ECC - mode organization • All inputs, outputs and clock fully TTL compatible • Fast access and cycle time 60 ns access time

Contextual Info: SIEMENS IS D N S u b s c rib e r A c c e s s C o n tro lle r fo r U pn-In te rfa c e T e rm in a ls S m a rtL in k -P PSB 2197 Preliminary Data 1 CMOS 1C Features • Cost/performance-optimized Upn-interface transceiver, compatible to PEB 2096 OCTAT-P and

Contextual Info: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212

3Tg 21 10 siemens

Abstract: 3TG siemens smd transistor ng ha T72 diode of 45 kv BTS432 BTS 432 E3062A siemens 3TG BTS432F* smd Q67060-S6203-A4 3Tg 21 20 siemens
Contextual Info: SIEMENS ö23SbüS OOTclfibO ] i b 3 WË PROFET BTS 432 F2 Smart Highside Power Switch Features • • • • • • • • • • • • Product Summary Load dump and reverse battery protection1 H-oad dump 80 Clamp of negative voltage at output Vbb- V o u t Avalanche Clamp

Siemens b41306

Abstract: Siemens B43306
Contextual Info: Capacitors with Solder Pins GP Grade B 41 306 B 43 306 Standard version with high ripple current capability Rated voltage up to 500 Vdc Construction • • • • Charge-discharge proof, polar Aluminum case, fully insulated Overload protection by preset break point in case

VOC sensor

Abstract: vbb resistor 45VTYP RXJ Series
Contextual Info: Preliminary data SIEMENS BTS 620 TWO CHANNEL PROFET Description PROFET R an intelligent power switch with integrated Two independent high-side switches Overtemperature protection for each channel Overload protection for each channel Short circuit protection by overtemperature protection 2

SIEMENS 3 TB 40 12 - 0A

Abstract: BTS555P BTS555 siemens profet siemens 12V small relays BTS current sense siemens SIEMENS 3 TB 40 10 - 0A
Contextual Info: flEBSbDS SIEM ENS □ D ‘ì 2 c142 GET PROFET Target Data Sheet BTS 555 P Smart Highside High Current Power Switch Features • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Overtemperature protection

MSD2310TXV

Abstract: MIL-D-87157 MSD2310 7 dot LED LEVEL METER DRIVER
Contextual Info: SIEMENS AKTIENGESELLSCHAF SIEM EN S 47E D • 053SbDS □027DGC| 2 « S I E G MSD231 O T X V / T X V B t - hv- 3 7 YELLOW MSD2311TXV/TXVB h ig h eff . r e d MSD2312TXV/TXVB HIGH EFF. GREEN MSD2313TXV/TXVB red .200" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display

1kt marking code

Abstract: tank if SMD MARKING CODE MCL T1-1T neosid 47 neosid NEOSID s4 smd marking code pp ITS03104 MARKING CODE SMD IC Q67000-A6084
Contextual Info: SIEM EN S Quadrature Phase Modulator PMB 2205 Preliminary Data Bipolar IC Features • • • • • • • • • • • • • • • • • Double-balanced mixers Direct modulation Linear modulating inputs Symmetrical circuitry Generation of orthogonal carriers within a wide

smd diode code b54

Abstract: smd transistor c015 BUZ101S E3045 Q67040-S4013-A2 smd code book 71ss TRANSISTOR SMD MARKING CODE c015 01333LA
Contextual Info: BUZ101S Infineon ta c h n ol o g ¡ u m p f ° v c d Ro8'°”’ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance R0S on • Avalanche rated Continuous drain current

Contextual Info: SIEMENS Extended Line Card Interface Controller ELIC 1 PEB 20550 PEF 20550 Features Switching EPIC®-1 • Non-blocking switch for 32 digital (e.g. ISDN) or 64 voice subscribers - Bandwidth 16, 32, or 64 kbit/s - Two consecutive 64-bit/s channels can be

Contextual Info: SIEMENS S/T Bus Interface Circuit Extended 1 PEB 2081 Features • Full duplex 2B+D S/T-interface transceiver according to the following specifications: - ITU Recommendation 1.430 - ETS 300 012 - ANSI T1.605 • 192 kbit/s transmission rate • Pseudo-ternary coding with 100 % pulse width

Contextual Info: BSO 220N Infineon t«ehneiog¡«i Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Dual N Channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 20 V ^fos on

TLE4216 G

Contextual Info: tDE D I fl235bOS OOSObMl Tb2 • SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF Intelligent Sixfold Low-Side Switch TLE 4216 Features • Double low-side switch, 2 x 0.5A • Quad low-side switch, 4 x 50 mA • Power limitation • Open-collector outputs • Overtemperature shutdown

siemens mov all range

Abstract: intel 80c535 n
Contextual Info: 47E D • 023SbDS OOaô'ID? b » S I E G SIEMENS AKTIENGESELLSCHAF T- s SAB 80C515/80C535 8-Bit CMOS Single-Chip Microcontroller Advance Inform ation SAB 80C515 / 80C515-16 CMOS microcontroller with factory mask-programmable ROM SAB 80CS35 / 80C535-16 CMOS microcontroller for external ROM

Contextual Info: SIEMENS 3 mm T1 LED, Non Diffused LS P380, LO P380, LY P380 LG P380, LP P380 Besondere Merkm ale • • • • • • farbloses, klares G ehäuse zur Einkopplung in Lichtleiter als optischer Indikator einsetzbar Lötspieße m it Aufsetzebene gegurtet lieferbar

smd marking YB

Abstract: Q67100-Q1557 405AJ 3164405AT-60 SMD MARKING CODE 09t P-SOJ-32-1 TSOP-32 ACS42
Contextual Info: SIEM ENS 16M 4-Bit Dynam ic RAM u X 4k & 8k-Refresh, EDO-version HYB 3164405AJ/AT(L) -40/-50/-60 «Y B 3165405AJ/AT(L) -40/-50/-60 X P r e lim in a r y In fo rm a tio n • • • • 16 777 216 words by 4-bit organization 0 to 70 ”C operating tem perature

SFH 462

Abstract: 462-L sfh462 7080C
Contextual Info: SIEMENS GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter SFH 462 Wesentliche Merkmale Features • Strahlung im sichtbaren Rotbereich ohne IRAnteil • Kathode galvanisch mit dem Gehäuseboden verbunden • S e h r hoher W irkungsgrad • Hohe Zuverlässigkeit

Contextual Info: SIEMENS BAS 170W Silicon Schottky Diode • • • • • General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Small package SOD-323 ESP: Electrostastic discharge sensitive device, observe handling précautions!