362-0 TRANSISTOR Search Results

362-0 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

362-0 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Q62702-F395 Abstract: bf363 Q62702-F396 BF 362 BF362 Contextual Info: ESC D • ÖSBSbOS Q0Q4M7? ô H S I E 6 T- 3 NPN Silicon RF Transistors - SIEMENS AKTIENGESELLSCHAF - BF 362 BF 363 for UHF TV tuners BF 362 and BF 363 are NPN silicon planar RF transistors in a plastic package similarto T 0 119 (50 B3 DIN 41867 . BF 362 is particularly suitable for gain-controlled input stages, and	OCR Scan	Q0QHM77 T0119 Q62702-F395 Q62702-F396 fl23SbQS -BF363 bf363 Q62702-F396 BF 362 BF362	PDF
SD1229-1 Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2 watt carbon resistor THOMSON-CSF, RF TRANSISTOR Contextual Info: S G S-THOMSON G4C 0 I 7=12=1237 0 0 0 0 0 4 1 T 1~ ' D T ^S3 - / / SOLID STATE MICRUWAVE SD1229-1 THOMSON-CSF COMPONENTS CORPORATION î Montgorrieryville, P A 18936 * Ï215 362-8500 • TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR .230 .320 DESCRIPTION	OCR Scan	SD1229-1 SD1229-1 D0D0Q42 electrolytic35 J25/16" VK2K/07-3B RF NPN POWER TRANSISTOR 1000 WATT 2 watt carbon resistor THOMSON-CSF, RF TRANSISTOR	PDF
SD1303 Abstract: thomson microwave transistor THOMSON-CSF MICROWAVE TRANSISTORS SD-1303 Contextual Info: S G S —THOMSON _ _ _ Q l,C _ D • 0 0 0 0 3 .3 0 ^ J P T '" 5 t '" / S ' SOLID STATE MICROWAVE ^ SD1303 THOMSON-CSF COMPONENTS CORPORATION ^^ontgomwyvUle, PAJ8936 » 2 Î5 362-8500 ■ TWX 510-661-7299 , ' , - /, f .; 'j VHF/UHF COMMUNICATIONS TRANSISTOR	OCR Scan	PAJ8936 SD1303 SD1303 thomson microwave transistor THOMSON-CSF MICROWAVE TRANSISTORS SD-1303	PDF
2N5591 Abstract: 2N5590 2N5589 transistor 2N5589 2n5591_ Contextual Info: S G S-"THOMSON Q5C Q \| ?cia clS 3 7 T-JS'-u 0 0 0 0 jb fl2 SOLID STATE MICROWAVE 2N 5589 2N 5590 2N5591 THOMSON-CSF COMPONENTS CORPORATION Montgomeryviile, PA 18936 • 215 362-8500 ■ T W X 510-661-7299 3 W /1 0 W /2 4 W, 12.5 V VHF POWER TRANSISTOR DESCRIPTION:	OCR Scan	PA18936 2N5589 2N5590 2N5591 MT-71 N5590 transistor 2N5589 2n5591_	PDF
Contextual Info: 2SA1362 T O SH IB A 2 S A 1 362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • + 0 .5 2 . 5 - 0 .3 High DC Current Gain : hpE —120~400 Low Saturation Voltage	OCR Scan	2SA1362 400mA,	PDF
SD1451 Abstract: transistor sd1451 CQ 730 SD1451-2 TWX510-661-7299 Solid State Microwave Contextual Info: S G S— THOMSON ' ” 0 MC~D ?*=1ETE37 aoaaQ7fl 0 SOLID STATE MICROWAVE SD1451 THOMSON-CSF COMPONENTS CORPORATION ; Montgomeryvifle, PA 18936• (215? 362-8500« TWX 510-661-7299 2-30 MHz, 12.5 V SSB POWER TRANSISTOR DESCRIPTION The SD1451 is a 12.5 volt epitaxial silicon NPN planar transistor	OCR Scan	TWX510-661-7299 SD1451 SD1451 transistor sd1451 CQ 730 SD1451-2 TWX510-661-7299 Solid State Microwave	PDF
transistor j304 Abstract: thomson microwave transistor Contextual Info: S G S— THOMSON OSC D \| 7 = ^ 2 3 ? OüGQlt.0 7 \| ~ 0 T ~ ? 3 ' ûj SOLID STATE MICROWAVE SD1012-3 RF 2128 THOMSON-CSF COMPONENTS CORPORATiON Montgomeryville, P A 18936 • ¡215) 362-8500 ■ TWX 510-661-7299 6 W, 12.5 V VHF POWER TRANSISTOR DESCRIPTION	OCR Scan	SD1012-3 SD1012-3 18awg. /07-3B transistor j304 thomson microwave transistor	PDF
TACAN transistor Abstract: transistor Common Base amplifier Contextual Info: S G S-THOMSON _ T 'Ji d 04C D \| T'ìETEB? 0 0 0 0 1 3 3 M -o r SOLID STATE MICROWAVE SD1524 . THOMSON-CSF COMPONENTS CORPORATION \| Montgomeryville, PA 18936 • 215 362-8500 » TWX 510-661-7299 MICROWAVE POWER TRANSISTOR IFF, DME, TACAN DESCRIPTION The SSM SD1524 is a gold metalized, silicon NPN power transistor. The	OCR Scan	SD1524 SD1524 IFF/28 DME/28 TACAN/28 TACAN transistor transistor Common Base amplifier	PDF
SD1408 Abstract: Arco 403 vk 200 Solid State Microwave 71-SE THOMSON-CSF, RF TRANSISTOR 50 50 mfd CAPACITOR Contextual Info: S G S-TH O M S O N Q5C D \| 7 1 S e1 2 3 7 0 a Q 0 3 .?M 7 \| D T - i ^ - / J _ SOLID STATE MICROWAVE SD1408 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville", PA 18936 • 215 362-8500 ■ TWX 510-661-7299 45 W, 1 2 . 5 V UHF POWER TRANSISTOR DESCRIPTION	OCR Scan	SD1408 00QQ175 Arco 403 vk 200 Solid State Microwave 71-SE THOMSON-CSF, RF TRANSISTOR 50 50 mfd CAPACITOR	PDF
sd1272 Contextual Info: 04C 0 \| _ 7 * ^ 2 3 7 ^ GOQOOMB 3 \| S G S-THOMSON SOLID STATE MICRUWAVE SD1272 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936» 215 362-8500 • TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type SD1272 is a 12.5 volt epitaxial silicon NPN planar	OCR Scan	SD1272 SD1272 Hz/12	PDF
2N6080 Abstract: 2N6081 2N6084 2N6083 Contextual Info: S G S-THOM SON _ _ DMC I 7 ^ 5 3 ? Q 0 Q D DT 7 SOLID STATE MICROWAVE 4 \| _ D _7% ’ ?5l7 2N6080 2N6081 2N6082 2N6083 2N6084 : THOMSON-CSF COMPONENTS CORPORATION : MontgomeryviUe, PA 18936 • 215 362-8500 ■ TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR	OCR Scan	2N6080 2N6081 2N6082 2N6083 2N6084 2N6084	PDF
Contextual Info: Ordering num ber:EN 572D SA\YO No.572D 2SA1016,1016K/2SC2362,2362K PNP/ NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp _Applications : 2 S A 1 0 1 6 ,1 0 1 6 K 2 S A 1 0 1 6 ,2 S C 2 362 2 S A 1 0 1 6 K ,2 S C 2 3 6 2 K u n i t	OCR Scan	2SA1016 1016K/2SC2362 2362K	PDF
2n6080 Abstract: 2N6083 2N6081 2N6084 2N6082 Thomson-CSF Contextual Info: SOLID STATE MICROWAVE 2N 6 08 0 2N6081 2N 6082 2N 6083 2N 6 08 4 THOMSON-CSF COMPONENTS CORPORATION MontgomeryyiUe, PA 18936 • 215 362-8500 ■ TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR DESCRIPTION: This line o f epitaxial silicon NPN-planar transistor is designed primarily	OCR Scan	2N6080 2N6081 N6082 2N6083 N6084 250mA 100mA 200mHz 175mHz, 2N6084 2N6082 Thomson-CSF	PDF
transistor 2N5 Abstract: 2N5641 2000C 2N5642 2N5643 MT-72 2n56 Contextual Info: s G S-THOMSQN ~ OSC D \| 7151537 □□□Ol'lfl T J ~ 0 ^ SOLID STATE MICROWAVE 2N5641 2N 5642 THOMSON-CSF COMPONENTS CORPORATION « N5643 Montgomeryville, RA 18936 • 215 362-8500 ■ TW X 510-661-7299 ° 7 W /20 W /40 W, 28 V, VHF POWER TRANSISTOR DESCRIPTION:	OCR Scan	2N5641 2N5642 2N5643 transistor 2N5 2000C 2N5642 2N5643 MT-72 2n56	PDF

BF363 Contextual Info: ESC D • ÖSBSbOS Q0Q4M7? ô H S I E 6 T- 3 NPN Silicon RF Transistors - SIEMENS AKTIENGESELLSCHAF - BF 362 BF 363 fo r U H F T V tuners BF 3 6 2 and BF 3 6 3 are NPN silicon planar RF transistors in a plastic package similarto T 0 119	OCR Scan	BF363 BF363	PDF
2N3553 Abstract: 2N3375 2N3733 2N 3375 Contextual Info: s 'G S-THOMSON ÜSC D \| 7T2TE37 GOQanQ 5 Ì o T ~ ? $ r ? SOLID STATE MICROWAVE 2N 3375 2N 3632 THOMSON-CSF COMPONENTS CORPORATION 2N3553 2N 3733 ‘Montgomeryville, PA 1893Ç • 215 362-8500 ■ TWX 510-661-7299 2.5 W /3.0 W /1 0 W /l 3.5 W, 28 V, DESCRIPTIO N:	OCR Scan	7T2TE37 2N3553 2N3733 2N3375 2N3733 2N 3375	PDF
thomson rf transistor Abstract: thomson microwave transistor sd1013 Contextual Info: 1 S G S-¡-THOMSON DSC D \| TTETEB? Q O D Q ltiE r T- 5 ? ' 0 . 7 SOLID STATE MICROWAVE SD1013 THOMSON-CSF COMPONENTS CORPORATION Montgomery ville, PA 18936 • 215 362-8500 ■ TW X 510-661-7299 10 W, 28 V VHF POWER TRANSISTOR DESCRIPTION SSM device type SD1013 is an epitaxial silicon NPN-planar transistor	OCR Scan	SD1013 SD1013 thomson rf transistor thomson microwave transistor	PDF
SD1438 Abstract: thomson microwave transistor Contextual Info: S G S -TH O M SO N □ SC 0 I 7T5TE37 G O O Q lâM T \| ° SOLID STATE MICROWAVE SD1438-2 THOMSON-CSF COMPONENTS CORPORATION Montgomeryviile, P A 18936 • 215 362-8500 ■ TWX 510-661-7299 100 W, 28 V VHF POWER TRANSISTOR DESCRIPTION ■230 SSM device type SD1438-2 is a 28 volt epitaxial silicon NPN planar	OCR Scan	7T5TE37 SD1438-2 SD1438-2 SD1438 thomson microwave transistor	PDF
Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1237H6PZ Microcontroller identical to LM4F132H5QC D ATA SHE E T D S -T M 4C 1237 H6 P Z - 1 4 6 0 2 . 2 6 4 8 S P M S 362 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright	Original	TM4C1237H6PZ LM4F132H5QC)	PDF
ferroxcube ferrite beads Abstract: N15W N25W thomson microwave transistor 2N5946 N5946 TWX510 THOMSON-CSF electrolytic vk 200 N30W Contextual Info: □4C D I 7 ^ 5 3 7 ' S G S-THOMSON T- ss - t t 00000^5 0 l > SSM S O L ID ST A T E M IC R O W A V E 2 N 5 9 4 6 ; !r THQMSON-CSF COMPONENTS CORPORATION I;Montgomeryvilie, PA 18936• 215 362-8500■ TWX510-661-7299 UHF C O M M U N IC A T IO N S T RA N SISTO R	OCR Scan	N5946 TWX510 2N5946 56-590-65/3B 200/19-4B ferroxcube ferrite beads N15W N25W thomson microwave transistor THOMSON-CSF electrolytic vk 200 N30W	PDF
Contextual Info: S G S— THOMSON OMC 0 \| 715^237 aGGGÜS3 b j S O L ID ST A T E M IC R O W A V E S D 1 410 :THOMSON-CSF COMPONENTS CORPORATION L Montgomeryville, PA 18936« 215 362-8500 • TWX 510-661-7299 800 M H z C O M M U N IC A T IO N S T R A N S IS T O R DESCRIPTION	OCR Scan	SD1410 -K-6098 K-6098	PDF
BF362 Abstract: TFK S 741 gain bandwidth product TFK 03 BF363 Contextual Info: BF 362 * BF 363 Silízium-NPN-HF-Planar-Transistoren Silicon NPN RF Planar Transistors Anwendungen: BF 362: Regelbare UHF/VHF-Eingangsstufen BF 363: Selbstschw ingende M ischerstufen Applications: BF 362: Gain co ntrolled UHF/VHF input stages BF 363: S elf oscillating m ixer stages	OCR Scan		PDF
RAYTHEON Abstract: Raytheon Company RMPA61810 2 watt rf transistor Contextual Info: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize	Original	RMPA61810 RMPA61810 RAYTHEON Raytheon Company 2 watt rf transistor	PDF
smd transistor 2f Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z Contextual Info: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.	OCR Scan	Tap15 FTO-220 S10VB S15VB S15VBA S25VB S50VB S10WB S15WB S20WB smd transistor 2f 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z	PDF

362-0 TRANSISTOR Search Results

362-0 TRANSISTOR Result Highlights (5)

362-0 TRANSISTOR Datasheets Context Search

Q62702-F395

SD1229-1

SD1303

2N5591

SD1451

transistor j304

TACAN transistor

SD1408

sd1272

2N6080

2n6080

transistor 2N5

BF363

2N3553

thomson rf transistor

SD1438

ferroxcube ferrite beads

BF362

RAYTHEON

smd transistor 2f