7T2TE37 Search Results

GG3L

Contextual Info: SbE J> m 7T2TE37 GG3li74b 'ÎSB • S G T H SCS-THOMSON ' S G M54HCT04 M74HCT04 S-THOMSON HEX INVERTER ■ LOW POWER DISSIPATION Ice = 1 MAX. at Ta = 25°C ■ HIGH NOISE IMMUNITY V n IH = VNIL = 28% Vcc (MIN.) ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS

irf720

Abstract: diode ko 474
Contextual Info: 7T2TE37 ÜOMSb?^ 752 • S G T H IRF720 IRF720FI SGS-THOMSON ULIKgTO«! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF720 IRF720FI ■ . ■ ■ « V dss R D S on Id 400 V 400 V < 1.8 £2 < 1 .8 0 4.2 A 3 A TYPICAL RDs(on) = 1.65 £2 AVALANCHE RUGGED TECHNOLOGY

2N3553

Abstract: 2N3375 2N3733 2N 3375
Contextual Info: s 'G S-THOMSON ÜSC D | 7T2TE37 GOQanQ 5 Ì o T ~ ? $ r ? SOLID STATE MICROWAVE 2N 3375 2N 3632 THOMSON-CSF COMPONENTS CORPORATION 2N3553 2N 3733 ‘Montgomeryville, PA 1893Ç • 215 362-8500 ■ TWX 510-661-7299 2.5 W /3.0 W /1 0 W /l 3.5 W, 28 V, DESCRIPTIO N:

Contextual Info: 7T2TE37 m ÜD4bl73 bl? • S G T H _ r Z 7 SCS-THOMSON m 7# STP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N 60FI V dss RDS on Id 600 V < 2 .2 Q 2 .7 A . TYPICAL RDS(on) = 2 i i m AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

BTB12CW

Contextual Info: 3DE D • 7T2TE37 DÜ3172fl 3 T O '15 SGS-THOMSON B T B 12 C W kT # S G S-THOMSON SNUBBERLESS TRIACS ■ It rm s = 12 A at Tc = 95 °C. ■ V drm : 200 V to 800 V. ■ Ig t = 35 m A Q l-ll-lll . ■ GLASS PASSIVATED CHIP. ■ HIGH SURGE CURRENT : It s m = 120 A.

Contextual Info: 7T2TE37 ÜOMSb?^ 752 • S G T H IRF720 IRF720FI SGS-THOMSON ULIKgTO«! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF720 IRF720FI ■ . ■ ■ « V dss R D S on Id 400 V 400 V < 1.8 £2 < 1 .8 0 4.2 A 3 A TYPICAL RDs(on) = 1.65 £2 AVALANCHE RUGGED TECHNOLOGY

74hct07

Abstract: 74LS07 74ls07 buffer TTL 74ls07 74LS07 TTL M74HCT07 M54HCT07 M74HCT07B1
Contextual Info: S G S-THONSON 07 C HS-G2MOS r t - ^ zi D ~\ I 7T2TE37 0015333 0 INTEGRATED CIRCUITS PRODUCT PREVIEW HEX BUFFER DESCRIPTION Thé M54/74HCT07 is a high speed CMOS HEX BUFFER fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL

74LS195 truth table

Contextual Info: 5bE D • 7^537 ODHOOaa 77T MSiSTH_ SCS-THOM SON tH Tls! ö liSD@S M54HC195 M74HC195 S-THOMSON T - H i- O f- O 4 BIT PIPO SHIFT REGISTER ■ HIGH SPEED tPD = 14 ns (TYP.) at V c c = 5V ■ LOW POWER DISSIPATION |cc = 4 pA (MAX.) at TA = 25°C 6V

Contextual Info: £ Z 7 ^ 7/ SG S "T H O M S O N R LKgTTMDtEi ESM1600B QUAD COMPARATOR INTERFACE CIRCUIT . MINIMUM HYSTERESIS VOLTAGE AT EACH INPUT: 0.3V • OUTPUT CURRENT : 15 mA . LARGE SUPPLY VOLTAGE RANGE : + 10V to + 35V ■ INTERNAL THERMAL PROTECTION . INPUT AND OUTPUT CLAMPING PROTEC­

Contextual Info: 7421237 0 G 2 Ô 4 CÎ7 b • 'T '3 } > - 0 3 SGS-THOMSON iLdtmnfMOûS S G S- TH OM SON BSW67 BSW68 3QE D HIGH VOLTAGE SWITCH DESCRIPTIO N The BSW 67 and BSW 68 are silicon epitaxial pla­ nar NPN transistors in Jedec TO-39 metal case. They are intended for high voltage inductive load

Contextual Info: * r z z 7/. S G S -T H O M S O N S T H 221 M U L D E X IC FO R M U L T IM E D IA T E L E S E R V IC E S • HCMOS SEA OF GATE TECHNOLOGY ■ 64 PINS QUAD FLAT PACKAGE ■ TWO MODES OF OPERATION: STAND­ ALONE, MICROPROCESSOR ■ INTERFACE FOR 8/16/32 BIT MICROPRO­

Contextual Info: SbE D 7TETE37 ÜÜ400ÔÔ T -£ ? -Z l-S l M54HC257/258 M74HC257/258 713 ISGTH SGS-THOMSON Kiö D [^ @ [1 tLEKSTTt^OlRO D© S HC257 QUAD 2-CHANNEL MULTIPLEXER 3-STATE HC258 QUAD 2-CHANNEL MULTIPLEXER (3-STATE, INVERTING) s G S- THOMSON HIGH SPEED tPD = 12 ns (TYP.) at VCc = 5V

transil 428

Contextual Info: SGS-THOMSON M ^©iy! gïïM KiO(gi sm4T6V8, A/220, a SM4T6V8C,CA/220C,CA TRANSIL FEATURES . PEAK PULSE POWER= 400 W @ 1ms. • BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V. ■ UNI AND BIDIRECTIONAL TYPES. . LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR).

Contextual Info: SGS'THOMSON m : H E O T M 0 i S D 1726 T H A I 5 RF & M ICROW AVE TRANSISTO RS HF SSB APPLIC ATIO N S OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD -3 0 dB COMMON EMITTER GOLP METALLIZATION P o ut = 150 W PEP MIN. WITH 14 dB GAIN DESCRIPTION The SD1726 is a 50 V epitaxial silicon NPN planar

Contextual Info: / T 7 SGS-IHOMSON *J M , H D Ê œ ttJ lC T M D Ê g S T V 0 1 1 7 PAL/NTSC DIGITAL ENCO DER ADVANCE DATA • NTSC-M, PAL-M, PAL-B, D, G, H, I, PAL-N EASILY PROGRAMMABLE VIDEO OUTPUTS ■ UN AND Q/l MATRIXING FOR RESPEC­ TIVELY PAL AND NTSC ENCODING ■ DIGITAL FRAME SYNC INPUT/OUTPUT

Contextual Info: /7 7 S C S -T H O M S O N ^ 7 # . R ia D g lE (ô I!U l(ê T [S li!!ll(ê i T D A 7313 DIGITAL CONTROLLED STEREO AUDIO PROCESSOR WITH LOUDNESS ADVANCE DATA • INPUT MULTIPLEXER: -3 STEREO INPUTS - SELECTABLE INPUT GAIN FOR OPTIMAL ADAPTION TO DIFFERENT SOURCES

M74HC174

Contextual Info: SbE D • 7 ^ 2 =1237 0 0 3 ^ 0 0 ^ûû « S 6 T H Æ 7 S C S -T H O M S O N • 7 # , MMÖ illieir iMO(gS M54HC174 M74HC174 s G S-THOriSON r - i l - c r - l ù HEX D-TYPE FLIP-FLOP WITH CLEAR HIGH SPEED «MAX = 48 MHz (TYP.) at VCC= 5V LOW POWER DISSIPATION

Contextual Info: SGS-THOMSON Q g^(ô g[L[l TO(Q)iQ©S M27C256B 256K (32K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE - LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 10OjiA

Contextual Info: S G S -T H O M S O N l f o M D S B m iC T IF M O lg S o a b / c S E R IE S VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT PRELIMINARY DATA . . . . . . . . . • V E R Y LO W D R O PO U T VO LTA G E 0.45V V E R Y LO W Q U IE S C E N T C U R R EN T (TYP. 50 \xA IN O F F M O D E, 500|aA IN ON

62T53

Contextual Info: /T 7 S G S -T H O M S O N *J M , IMlD^MIILligWMnigf_ ST62T53B 8-BIT OTP MCUs WITH A/D CONVERTER & AUTO-RELOAD TIMER • 3.0 to 6.0V Supply Operating Range ■ 8 MHz Maximum Clock Frequency ■ -40 to +85°C Operating Temperature Range ■ Run, Wait and Stop Modes

Contextual Info: rZ J SGS-THOMSON GS-R4840NV 36 W NEGATIVE SWITCHING REGULATOR Type Vi v0 *0 GS-R4840NV - 40 to - 60 V -22 to -6 0 V - 600 mA FEATURES • ■ ■ ■ ■ ■ ■ Digital input for voltage selection Short-circuit protection Overvoltage protection Thermal protection

Contextual Info: SGS"THOMSON 5 7 . TMMBAT 46 [H g ilLI(g¥lS(S lüia(gi SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose, metal to silicon diode featuring high breakdown voltage low tum-on voltage. ABSOLUTE RATINGS (limiting values) Parameter Symbol V rrm Repetitive Peak Reverse Voltage

Contextual Info: £ ÿ j S G S -T H O M S O N • 100,000 ERASE/WRITE CYCLES ■ 10 YEARS DATA RETENTION ■ SINGLE 4.5V to 5.5V SUPPLY VOLTAGE ■ SPI BUS COMPATIBLE SERIAL INTERFACE ■ 2 MHz CLOCK RATE MAX ■ BLOCK WRITE PROTECTION ■ STATUS REGISTER ■ 16 BYTE PAGE MODE

74AC574

Abstract: 74AC574M AC574 S020
Contextual Info: SGS-THOMSON ilLllCT^OlDeS 74AC574 OCTAL D-TYPE FLIP FLOP WITH 3 STATE OUTPUT NON INVERTING . HIGHSPEED: fMAX = 220 MHz TYP. at Vcc = 5V • LOW POWER DISSIPATION: Ice = 8 \iA (MAX.) at T a = 25 °C . HIGH NOISE IMMUNITY: V n ih = V n il = 28% V c c (MIN.)