36N50P Search Results

I 508 V

Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 36N50P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 24 A ≤ 200 mΩ Ω ≤ 250 ns (Electrically Isolated Back Surface) Symbol

123B16

Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N50P IXFT 36N50P IXFV 36N50P VDSS ID25 RDS on = 500 V = 36 A Ω = 170 mΩ N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR

36n50P

Abstract: PLUS220SMD V36N50P
Contextual Info: Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode VDSS ID25 IXTH 36N50P IXTT 36N50P IXTQ 36N50P IXTV 36N50P IXTV 36N50PS RDS on = 500 V = 36 A Ω = 170 mΩ TO-3P (IXTQ) Symbol Test Conditions

Contextual Info: PolarHVTM Power MOSFET IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 500 V = 36 A Ω ≤ 170 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C

plus220smd

Abstract: 36N50P IXFH36N50P
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode VDSS ID25 = 500 V = 36 A Ω = 170 mΩ RDS on TO-247 AD (IXFH) (TAB) Symbol Test Conditions

36n50P

Abstract: 36N50 IXTH36N50P 4515 n 36n50P equivalent QG SMD TRANS IXTV36N50P PLUS220SMD IXTQ36N50P FS25
Contextual Info: PolarHVTM Power MOSFET IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 500 V = 36 A ≤ 170 mΩ Ω TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C

36N50P

Abstract: IXTQ36N50P
Contextual Info: Advanced Technical Information IXTQ 36N50P IXTT 36N50P PolarHVTM Power MOSFET VDSS ID25 = 500 V = 36 A ≤ 170 mΩ Ω RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

IXFH36N50P

Abstract: 36N50PS 36N50 36n50P PLUS220SMD
Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS VDSS ID25 RDS on trr = 500 V = 36 A ≤ 170 mΩ Ω ≤ 200 ms TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings

Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS = 500 ID25 = 19 RDS on ≤ 190 ≤ 200 trr IXFC 36N50P IXFR 36N50P (Electrically Isolated Back Surface) V A mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N50P IXFT 36N50P IXFV 36N50P VDSS ID25 RDS on = 500 V = 36 A Ω = 170 mΩ N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR

36n50P

Abstract: ISOPLUS247
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 36N50P IXFR 36N50P VDSS ID25 = = RDS on ≤ ≤ trr (Electrically Isolated Back Surface) 500 18 190 250 V A Ω mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol

36N50

Abstract: 36N50P ISOPLUS247
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFC 36N50P IXFR 36N50P VDSS = 500 ID25 = 19 RDS on ≤ 190 ≤ 200 trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C

36n50P

Contextual Info: Advanced Technical Information IXTQ 36N50P IXTT 36N50P PolarHVTM Power MOSFET VDSS ID25 = 500 V = 36 A ≤ 170 mΩ Ω RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

2n60p

Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Contextual Info: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond

STW20N60

Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal