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    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS F U J IT S U 23E D • 374T7t2 OOOölöi 3 ■ E C 4 Ö 9 0 & B J B IP O L A R R A N D O I ACCESSMEMOR 4096-B IT BIPOLAR ECL RANDO M ACCESS M EM O RY The Fujitsu M B M 1 0 4 7 0 A is fu lly decoded 4 0 9 6 -b it E C L read /w rite random


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    PDF 374T7t2 4096-B 37417L2 T-46-23-05 0470A-10 70A-15 0470A-20

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MI C ROE L E C T R ONI C S 23E D 374T7t i S Q012Ö45 3 ASSP • Data Exchange C O D E C IC MB6020A Series Device Number Function Law MB6021A M-law MB6022A A-law Sync/Async Analog Outut (k fì) Supply Voltage (V) Package Alternate Source HD44234 ±5V±5%


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    PDF 374T7t MB6020A MB6021A HD44234 DIP-16P-M03 DIP-16C-C04 DIP-16G-M04

    ssi 117

    Abstract: MB3857 SSI104 ssi117
    Text: FUJITSU M I C R O E L E CT RO NI CS FU JITSU ll lilBHlllllBli 23E D 374T7ti5 0012033 2 ASSP FLOPPY AND HARD DISK V F O for F D D Device Number Function V C O Free Run Frequency typ VFO 2M H z Supply Voltage V Supply Current typ M B4107 70m A +5± 5 % M B4108


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    PDF 374T7ti5 B4107 B4108 DIP-24P-M02 FPT-24P-M02 B4120 FPT-44P-M01 MB4111 ssi 117 MB3857 SSI104 ssi117

    8464a

    Abstract: MBB464A 8464A-10 MB6464 3170L mb8464a
    Text: F UJITSU M I C R O E L E C T R ON I C S 7fl D E | 374T7t,2 □□□33ÖQ 1 3749762 FUJITSU MICROELECTRONICS 7ÖC 033ÖÜ u _-i T-46-23- Preliminary F U J IT S U M OS M em o rie s • M B 8464A -10-W , M B 8464A -15-W CM OS 65,536-Bit Static Random Access Memory


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    PDF 374T7t T-46-23- -10-W -15-W 536-Bit MB8464A-W 192-word u0033flY 28-Lead 8464a MBB464A 8464A-10 MB6464 3170L mb8464a

    C350AVB

    Abstract: full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder
    Text: FUJITSU MICROELECTRONICS F U JIT S U wmmm 7flC D B 37MT7bH □D03c]4b 3 • JZ CMOS Gate Array GENERAL INFORMATION The Fujitsu CM O S gate array fam ily consists of tw en tyeight device types which are fabricated w ith advanced silicon gate CMOS technology. And more than 14 devices


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    PDF 37MT7bH 74LS175 74LS181 74LS183 74LS190 74LS191 74LS192 74LS193 74LS194A 74LS195A C350AVB full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder

    2TT 4.00 MG

    Abstract: MB81464-12 81464-12 MB81464 equivalent b1464 MB81464 DIP-18P-M03 HM50464 ZIP-20P-M01 UPD41254
    Text: T-4 é>~2 ô - / 7 FUJITSU MICROELECTRONICS 47E D • 374=571=2 001*1311 7 BFNI FUJITSU October 1990 Edition 6.0 DATA SHEET MB81464-12/-15 MOS 262,144 B IT DYNAMIC RANDOM ACCESS M EM O R Y 65,536 x 4 Bits Dynamic Random Access Memory The Fujitsu MB81464 Is a fully decoded, dynamic random access memory


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    PDF MB81464-12-15 MB81464 18-pin 20-pin Z20001S-4C MB81464-12 MB81464-15 18-LEAD 2TT 4.00 MG 81464-12 MB81464 equivalent b1464 DIP-18P-M03 HM50464 ZIP-20P-M01 UPD41254

    MB8841

    Abstract: P20-P23
    Text: FUJITSU MIC RO EL EC TR ON IC S T7 FU JITSU DE § 3 7 ^ 7 ^ 2 0004LDS 4 | NMOS -INPUT/OUTPUT EXPANDER T -&-33 - o 3 MB 88304 MB 88305 April 1986 Edition 1.1 NMOS INPUT/OUTPUT EXPANDER The Fujitsu MB 8 8 3 0 4 /M B 8 8 3 0 5 are peripheral integrated circuits that can be


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    PDF 88304/MB 37417b5 T-52-33-03 24-LEAD DIP-24PM01) D24009S-1C J012I0 195I4 96IMAX MB8841 P20-P23

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS 47E D • 374T7b2 fi ■Fill May 1990 Edition 1.0 MB82B79-1S/-20 72K-BIT HIGH-SPEED BiCMOS SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory The Fujitsu MB82B79 is a 8,192 words x 9 bits static random access memory fabricated


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    PDF 374T7b2 MB82B79-1S/-20 72K-BIT MB82B79 FPT-28P-M02 374T7bE MB82B79-15 MB82B79-20

    MB8167A

    Abstract: B8167A-4S
    Text: FUJITSU MIC RO EL E C T R ON I C S 7ö » Ê 1 3 7 M “ì7t,a DD03410 b I — — 3 7497 62 FUJIT SU M I C R O E L E C T R ON I C S - — y ' 7ÖC 0 34 10 F U J IT S U MOS Memories • M B 8 1 6 7 A -5 5 , M B 8 1 6 7 A - 7 0 NMOS 16,384-Bit Static Random Access Memory


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    PDF DD03410 384-Bit MB8167A 20-Lead DIP-20C-C03 BB167A-4S MB8167A-65 B8167A-70 374T7t 00D3415 B8167A-4S

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU M I C RO EL EC TRON IC S 23E D 374T7b2 DQQ7hSb 3 T ^ k -2 S -0 S FU JITSU CMOSV262,144jBll STATICS RANDOM 900202024801010101010000000202010201 a c c e s s ím e m o r May 1988 Edition 1.0 262,144 WORDS X 1 BIT HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY


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    PDF 374T7b2 CMOSV262 144jBll MB81C81A 24030S 374T7bB T-46-23-05 MB81C81A-35

    B3603

    Abstract: Fujitsu MB3609
    Text: FUJ I TS U M I C R O E L E C T R O N I C S 31E D Bi 3 ? M ^ 7 b 2 Q Q 15 b 3 2 7 B H FMI -f~7?-0£r-|£7 O P E R A T IO N A L A M P L IF IE R The Fujitsu MB3603/3609 are high gain monolithic operational amplifiers. The MB3603/3609 are suitable for industrial measurement instrument or


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    PDF MB3603/3609 MB3609 /iA741 ASSIGNMEN010 D01Sh3fl MB3603 B3609 MB3609) DIP-08P-M01) B3603 Fujitsu MB3609

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MIC ROE LECTRONIC S 47E D • 374^71^ OOlflflD? 1 ■ May 1990 Edition 1.0 FUJITSU DATA SHEET ~ p 4 tr-J L 3 -Q MB81C81A-25/-35 CMOS 256K-BIT HIGH-SPEED SRAM 256K Words x 1 Bit High-Speed CMOS Static Random AccfeSs Memory Th» Fujitsu MB81C81A is a 262,144 words x 1 bit static random access memory


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    PDF MB81C81A-25/-35 256K-BIT MB81C81A 500mV MB81C81A-25 MB81C81A-35 24-LEAD DIP-24P-M03)

    ZC40

    Abstract: sz05 SZ05A-10 8265A
    Text: FUJITSU MICROELECTRONICS 7fl DE I 3 7 ^ 7 ^ 2 □ OGE'ìflD T . _ 78C 02980_ 3749762 FUJITSU MICROELECTRONICS 1^0Sÿ5536lBIT M FUJITSU DYNAMIOiRANDOM ÄO ESSl/IEM ORY MB 8265A-10 MB 8265A-12 MB 8265A-15 65,536-BIT DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB 8265A is a fully decoded, dynamic random access memory


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    PDF 5536lBIT 536-BIT DIP-16P-M03) 118I3 265A-10 265A-12 265A-15 LCC-18C-F02) ZC40 sz05 SZ05A-10 8265A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS 7 ft D e J 37^ 7^5 O Q Q a W l | T"VC'2 2 ^ T Advanced Inform ation FU JITSU MOS Memories MB811001-12, MB811001-15 1,048,576-Bit Dynamic Random Access Memory Description The Fujitsu MB811001 is a fully decoded, dynamic NMOS random


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    PDF MB811001-12, MB811001-15 576-Bit MB811001 MB811001-12 37MT7L DIP-18C-A01)

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU fllCROELECTRONICS 7fl 3749762 FUJITSU MICROELECTRONICS DEi| FU JITSU MOS M em o rie s M B 8 52 01 -12 , M B 8 52 01 -15 1,048,576 X 1-Bit Dynamic Random Access Memory SIP Module Description The Fujitsu MB85201 is a fully decoded, 1,048,576 word x 1-bit


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    PDF MB85201 MB81256 18-pad 22-ptn MB85201-12 MB85201-1S B8S201-15 374T7t

    HIGHWAY 09 20 PIN IC PIN DIAGRAM

    Abstract: HIGHWAY 09 16 PIN IC PIN DIAGRAM HIGHWAY 09 16 PIN IC PIN MB6046
    Text: F U J I T S U M I C R O E L E C T R O N I C S TT F U J IT S U 3 7 4 ^ 7 ^ 2 O Q Q S O S O 1 | D T-75-IZ-09 MB MB MB MB :P C M C O D E C 6041 6042 6045 6046 N ovem ber 1986 E d itio n 1.0 SINGLE CHIP CO D EC WITH FILTER S The Fujitsu C M O S M B 6040 Series consists o f both /i-law and A -lo w single-chip


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    PDF T-75-IZ-09 374T7bE 20-LEAD DIP-20C-C03) HIGHWAY 09 20 PIN IC PIN DIAGRAM HIGHWAY 09 16 PIN IC PIN DIAGRAM HIGHWAY 09 16 PIN IC PIN MB6046

    MB8418-20L

    Abstract: MB8417-20L TC5518 HM6117 m8s4
    Text: FUJITSU MICROELECTRONICS 7B F U JIT S U M IC R O E L E C T R O N IC S . DEI 3 m ñ l \ o B 0003335 1 |~ T-46-23-12; MB8418-20 MB8418-20L INC. CMOS 16,384-BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION The M B8418 can be optimized for high perform ance applications


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    PDF T-46-23-12; MB8418-20 MB8418-20L 384-BIT MB8418 B8418 374T7t 00D333Ö MB8418-20/MB8417-20L 24-LEAD MB8418-20L MB8417-20L TC5518 HM6117 m8s4

    MBM27C64-25X

    Abstract: MBM-27C64-25-X MBM27C64-25-x SU fujitsu
    Text: FUJITSU MICROELECTRONICS 7Û D E B 37 MTThc! G G D B M ñ S 3749762 FUJITSU MI CR O E L E C T R ON I C S 78C 03485 Df* FU JITSU MOS M em o ries M B M 2 7C 6 4-2 5X , M B M 2 7C 6 4-3 0X , M B M 27C 64-30W CMOS 65,536-BIT UV Erasable and Electrically Programmable


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    PDF 4-30W 536-BIT MBM27C64 536-blt MBM2764-type MBM27C64-25X MBM27C64-30X MBM27C64-30W C-32C-A01 MBM-27C64-25-X MBM27C64-25-x SU fujitsu

    Untitled

    Abstract: No abstract text available
    Text: F U J I TS U M I C R O E L E C T R O N I C S 47E ]> • 374<i7b2 0 0 1 7 b l 2 0 ■ F M I "7^52.-33- C S C ontents SP A R C l i te U s e r ' s Guide K*Mt t ««KKMM«««K Chapter 1 : G eneral 1.1 F e a tu r e s . 1-1


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    PDF 37iCi7tS D017713 MB86940

    mb8841

    Abstract: fujitsu MB8841 MB88400 fujitsu DIP-42 fujitsu 42pin MBM2732A 001S07 fujitsu DIP-42 microcomputer
    Text: FUJITSU MICROELECTRONICS ìlllllllllllllllllllllllllllillll FUJITSU 23E D • NMOS SINGLE-CHIP 4-BIT MICROCOMPUTER 374l7ba 0G1205S 2 MB88400 SERIES NMOS SINGLE-CHIP 4-BIT MICROCOMPUTER The Fujitsu MB88400H series NMOS single-chip 4-bit microcomputer family is a upgrade version


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    PDF 374l7ba 0G1205S MB88400 MB88400H MB8840 MB88400 MB88401 MB88401H 42-pin 48-pin mb8841 fujitsu MB8841 fujitsu DIP-42 fujitsu 42pin MBM2732A 001S07 fujitsu DIP-42 microcomputer

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU M IC RO EL E C T R ON I C S F U J IT S U 23E D • 374=171=2 G0Gfl34S 2 ECb 16384-BITSfe BIPOLAR, RANDOMI ACCESS M EM O R Ò 'T - M f c ^ - O S 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu M B M 10484A is fully decoded 16384-bit E C L read/write random


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    PDF G0Gfl34S 16384-BITSfe 16384-BIT 0484A LCC-28C-F02) 28010Sâ

    74LS382

    Abstract: C1602A C350AVB 74LS08 fan-in 74ls517 74LS556 74LS183 74LS86 full adder MB64H 74LS381
    Text: ix u jD U Lu ra n ctiu F U JIT S U _ mmm CWiOS Gate Array GENERAL INFORMATION The Fujitsu CMOS gate array family consists of twentyeight devlcs types which are fabricated with advanced silicon gate CMOS technology. And more than 14devlc«s are coming. Fujitsu CMOS gate array are configured In a


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    PDF veF178 74LS181 74LS190 F191H 74LS191 74LS192 74LS193 74LS194A 74LS195A 74S260 74LS382 C1602A C350AVB 74LS08 fan-in 74ls517 74LS556 74LS183 74LS86 full adder MB64H 74LS381

    74LS167

    Abstract: F199 transistor 74LS382 74LS514 74LS76A 74LS183 transistor b1100 74LS204 74ls171 F199
    Text: L F U J I T S U M ICR OELECTRO N ICS • 76C D 13 374T?b2 0003=170 0 ■ n Î-4 2 -1 1 -0 5 " m zæm F U JIT S U @iÆ<§ ñ w m ^ is s E s i GENERAL INFORMATION •. o f standard SSI's and M STs such as 7 4 L S series are prepared as macros called " F - M A C R G " in the library.


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    PDF 74LS181 74LS183 74LS190 74LS191 74LS192 74LS193 74LS194A 74LS195A 74S260 74LS261 74LS167 F199 transistor 74LS382 74LS514 74LS76A transistor b1100 74LS204 74ls171 F199

    MB81C78A-35

    Abstract: MB81C78A ICE 47E fujitsu 1988 IP-28P-M
    Text: FUJITSU MICROELECTRONICS 47E D BTMTTbS 0G1B77S 0 « F M I /Z April 1990 Edition 3.0 DATA SHEET _ FUJITSU MB81C78A-35/-45 CMOS 64K-BIT HIGH-SPEED SRAM 8K Words x 8 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C78A is a 8,192 words x 8 bits static random access memory


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    PDF 0G1B77S MB81C78A-35/-45 64K-BIT MB81C78A T-46-23-12 MB81C78A-35 MB81C78A-45 C-28P- C28054S-1C MB81C78A-35 ICE 47E fujitsu 1988 IP-28P-M