37BFIS01 Search Results

Contextual Info: P35-4256 Features • • • • • Broadband performance High Isolation Ultra low DC power consumption Fast switching speed, 30ns MAX 10 Lead Gull winged Package G lis MMIC SWITCH High Isolation DC to 2GHz SPDT Terminated switch with TTL Control Typical Performance

Contextual Info: P35-1110 Features • General purpose amplifier in PIN FET Receiver • Transimpedance amplifier for wide band PIN FET Receiver • High gm, typically 45mS. • Low gate leakage current, typically lOnA at -5 volts. • No selection required • Low Cgs, typically 0.4pF.

P35-4210-0

Abstract: P35-4210 T05 Package
Contextual Info: P35-4210 Applications • R.F. switch to 1000MHz in T05 package 2000MHz in chip form • Ideal for PIN switch replacement where minimal current is required typically < 10jJ.A • Fast switching speeds ( < Ins) with driver waveform enhancement • Low loss signal routing

Contextual Info: P35-4101 Features • • • • • U ltra broad band Self biased. N o sep arate gate supply required 22d B m output pow er capability Inpu t and output pads m atched to 50Q A vailable as chip or in surface m ou n t package GaAs MONOLITHIC BROADBAND AMPLIFIER

Contextual Info: P35-5100 This GaAs MMIC is a low noise amplifier fabricated on the 0.25|j.m HEMT process. Its broadband performance with flat gain response is ideal for EW and test equipment applications GaAs MMIC LNA FOR 2-20GHZ OPERATION Features • • • • • •

Contextual Info: P35-4250-3 Features Broadband performance Low insertion loss Ultra low DC power consumption Fast switching speed, 3ns typical SOI 6 surface mount package GaAs MMIC SWITCH DC to 2GHz SP4T reflective switch in S 016 plastic package Typical Performance F re q ue ncy G Hz