396MW Search Results

TSOP 54 PIN

Contextual Info: IBM0165160B 4M x 16 DRAM Features • Low Power Dissipation - Active: 504mW/432mW/396mW max - Standby (LVTTL Inputs): 7.2mW (max) - Standby (LVCMOS Inputs): 720mW (max) • 4,194,304 word by 16 bit organization • Single 3.3 ± 0.3V power supply • 4096 refresh cydes/64ms

Contextual Info: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608

MSM51V17100

Contextual Info: O K I Semiconductor MSM51V17100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V 17I00 is a new generation dynam ic organized as 16,777,216-word x 1-bit. The technology used to fabricate the M SM 51V I7100 is OKI's CM O S silicon gate process technology.

msm51v17800b

Abstract: MSM51V17800 SOJ28 bsl 100
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

SOJ28

Abstract: bsl 100 MSM51V16800B
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

17800

Contextual Info: GM71V17800C GM71VS17800CL 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM Description Features The GM71V S 17800C/CL is the new generation dynamic RAM organized 2,097,152 x 8 bit. GM71V(S)17800C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process

HY51VS

Contextual Info: HY51V S 16160HG/HGL 1M x 16Bit Fast Page DRAM PRELIMINARY DESCRIPTION The HY51V(S)16160HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)16160HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)16160HG/HGL offers Fast Page Mode as a high

Contextual Info: HY51V S 65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal

Contextual Info: HY51V S 16163HG/HGL 1M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)16163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)16163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)16163HG/HGL offers Extended Data Out PageMode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)16163HG/HGL to be

Contextual Info: HM51W16400 Series HM51W17400 Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-649A Z Rev. 1.0 Oct. 14, 1996 Description The Hitachi H M 51W 16400 Series, H M 51W 17400 Series are CMOS dynamic RAMs organized 4 ,194,304word X 4-bit. They employ the m ost advanced 0.5 Jim CMOS technology for high performance and low

S5400A

Abstract: RO3035
Contextual Info: •« Y U M D H I • HY51 V64400A,HY51 V65400A 16Mx4, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow

A6070M

Abstract: 780sa 7805A PI 81V17805 81v17805a
Contextual Info: P R E L IM IN A R Y - - August 1996 Edition 2.0 FUJITSU PRODUCT PROFILE SHEET MB 81 V 1 7 8 0 5 A -6 0 /7 0 /6 0 L /7 0 L CMOS 2M X 8BIT HYPER PAGE MODE DYNAMIC RAM CMOS 2,097,1 52x 8BIT Hyper Page Mode Dynamic RAM The Fujitsu MB81V17805A is a fully decoded CMOS Dynamic RAM DRAM that contains

Contextual Info: SM572013001Q4GU August 1996 Rev 0 SMART Modular Technologies SM572013001Q4GU 8MByte 1M x 72 , 5.0V, CMOS DRAM Module - Buffered General Description Features The SM572013001Q4GU is a high performance, 8-megabyte dynamic RAM module organized as 1M words by 72 bits, in a 168-pin, dual-in-line (DIMM)

Contextual Info: SM53616100UP3UU October 1996 Rev 2A SMART Modular Technologies SM53616100UP3UU 64MByte 16M x 36 CMOS DRAM Module General Description Features The SM53616100UP3UU is a high performance, 64-megabyte dynamic RAM module organized as 16M words by 36 bits, in a 72-pin, leadless, single-in-line

m51171

Contextual Info: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.

RS560C

Abstract: RS560 common base amplifier circuit common emitter amplifier
Contextual Info: Issued July 1983 004-591 Data Pack J RF amplifier IC RS560C Data Sheet RS stock number 303-214 A high performance low noise RF amplifier i.c. in an 8 pin DIL package. The large number of circuit nodes accessible from the outside of the package affords great flexibility, enabling the operating currents and

RT-6

Contextual Info: MITSUBISHI LS Is M5M4V4280J,TP,RT-6,-7,-8,-6S,-7S,-8S PAGE MODE 4718592-BIT 262144-WORD BY 18-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 262144-word by 18-bit dynamic RAMs, fabricated with the high performance CMOS process, and is

GM71V64403C

Abstract: GM71VS64403CL
Contextual Info: GM71V64403C GM71VS64403CL 16,777,216 WORDS x 4 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 64403C/CL is the new generation dynamic RAM organized 16,777,216 words by 4bits. The GM71V(S)64403C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as

16mx4

Abstract: HY51V64400A
Contextual Info: HY51V64400A,HY51V65400A 16Mx4, Fast Page mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow

Contextual Info: GM71V64403C GM71VS64403CL 16,777,216 WORDS x 4 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 64403C/CL is the new generation dynamic RAM organized 16,777,216 words by 4bits. The GM71V(S)64403C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as

Contextual Info: HY51V64800A,HY51V65800A 8Mx8, Fast Page mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 8,388,608 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow

MSM51V17100

Abstract: 724540
Contextual Info: O K I Semiconductor MSM5 1 V1 7 1 0 0 _ 16,777,216-Word x 1-Bit D Y N A M IC RA M : FAST PAGE M O D E TYPE DESCRIPTION The MSM51V17100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V17100 is OKI's CMOS silicon gate process technology.

TI AIH

Abstract: R 161 730 000
Contextual Info: O K I Semiconductor MSM51 V17160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM51V17160 is OKI's CMOS silicon gate process technology.

STR06

Contextual Info: MITSUBISHI M E M O R Y / A S I C blE D • b 2 4 cifiSS O O l V b ? 1* 5 3 ^ ■ M I T I M ITSUBISHI L S Is M 5 M 4 V 4 2 6 0 J , L , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM \T A f i