PIMD3
Abstract: No abstract text available
Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power
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NPT35050A
3A001b
750mA,
NDS-003
PIMD3
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Untitled
Abstract: No abstract text available
Text: TGC4406-SM 14 - 17 GHz Packaged Doubler with Amplifier Key Features • • • • • • • Measured Performance Bias conditions: Vd = 5 V, Id = 150 mA, Vg = -0.5 V Typical, Vdbl = -0.8 V Fixed RF Output Frequency Range: 28 - 34 GHz Input Frequency Range: 14 - 17 GHz
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TGC4406-SM
TGC4406-SM
3A001b
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TGC4406-SM
Abstract: power amplifier 5 ghz
Text: TGC4406-SM 14 - 17 GHz Packaged Doubler with Amplifier Key Features • • • • • • • Measured Performance Primary Applications Bias conditions: Vd = 5 V, Id = 150 mA, Vg = -0.5 V Pout at 2x Input Freq dBm • • Typical, Vdbl = -0.8 V Fixed 25
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TGC4406-SM
3A001b
TGC4406-SM
power amplifier 5 ghz
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Untitled
Abstract: No abstract text available
Text: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 50.5 dBm Nominal PSAT at 3 GHz 70.5% Maximum PAE
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TGF2023-2-20
TQGaN25
TGF2023-2-20
DC-18
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PIMD3
Abstract: No abstract text available
Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power
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PDF
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NPT35050A
3A001b
750mA,
NPT35050A
NDS-003
PIMD3
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Untitled
Abstract: No abstract text available
Text: TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 46.7 dBm Nominal PSAT at 3 GHz 60% Maximum PAE 17.5 dB Nominal Power Gain at 3 GHz
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TGF2023-2-10
TQGaN25
TGF2023-2-10
DC-18
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tgf2023-2-10
Abstract: No abstract text available
Text: TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 46.7 dBm Nominal PSAT at 3 GHz 55% Maximum PAE 17.5 dB Nominal Power Gain at 3 GHz
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TGF2023-2-10
TQGaN25
TGF2023-2-10
DC-18
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7824 MA datasheet
Abstract: No abstract text available
Text: TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 43 dBm Nominal PSAT at 3 GHz 78.3% Maximum PAE
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TGF2023-2-05
TQGaN25
TGF2023-2-05
DC-18
7824 MA datasheet
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tgf2023-2-05
Abstract: No abstract text available
Text: TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 43.9 dBm Nominal PSAT at 3 GHz 62% Maximum PAE
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TGF2023-2-05
TQGaN25
TGF2023-2-05
DC-18
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MC8087-2/GaN 100 watt
Abstract: No abstract text available
Text: TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 43.9 dBm Nominal PSAT at 3 GHz 56% Maximum PAE
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TGF2023-2-05
TQGaN25
TGF2023-2-05
DC-18
MC8087-2/GaN 100 watt
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Untitled
Abstract: No abstract text available
Text: TGC4406-SM 14 - 17 GHz Packaged Doubler with Amplifier Key Features • • • • • • • Measured Performance Bias conditions: Vd = 5 V, Id = 150 mA, Vg = -0.5 V Typical, Vdbl = -0.8 V Fixed RF Output Frequency Range: 28 - 34 GHz Input Frequency Range: 14 - 17 GHz
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PDF
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TGC4406-SM
TGC4406-SM
3A001b
April2012
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PIMD3
Abstract: No abstract text available
Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power
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Original
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PDF
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NPT35050A
3A001b
750mA,
NDS-003
PIMD3
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tgf2023-2-20
Abstract: No abstract text available
Text: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 49.6 dBm Nominal PSAT at 3 GHz 58% Maximum PAE
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TGF2023-2-20
TQGaN25
TGF2023-2-20
DC-18
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Untitled
Abstract: No abstract text available
Text: TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 47.3 dBm Nominal PSAT at 3 GHz 69.5% Maximum PAE 19.8 dB Nominal Power Gain at 3 GHz
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TGF2023-2-10
TQGaN25
TGF2023-2-10
DC-18
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EAR99
Abstract: GaN 100 watt GaN TRANSISTOR GaN matching 100 watt RF3934 Gan hemt transistor RFMD GaN amplifier RF393X RF3931 RF3932
Text: RFMD . 120 Watt GaN Wideband Power Amplifier The RF3934, the newest of RFMD’s series of unmatched power transistors, is a 48 volt, 120-watt high power discrete amplifier designed for commercial wireless infrastructure, military, industrial/ scientific/medical, and general purpose broadband amplifier
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RF3934,
120-watt
RF3934
EAR99
GaN 100 watt
GaN TRANSISTOR
GaN matching 100 watt
Gan hemt transistor RFMD
GaN amplifier
RF393X
RF3931
RF3932
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Untitled
Abstract: No abstract text available
Text: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 49.6 dBm Nominal PSAT at 3 GHz 53% Maximum PAE
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TGF2023-2-20
TQGaN25
TGF2023-2-20
DC-18
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