3A2 DIODE Search Results

3A2 diode

Abstract: 30-FRAME 1daz
Contextual Info: TENTATIVE 3A2 DATA - TUN6S0L -\ DIODE MINIATURE r ~ 8 UN I P O T E N T I A L ~ TYPE C A T H O DE M A X. HEATER ~T 5.15 VOLTS T -6 ^ 0.22 AMP. AC MAX. ANY M O U N T I N G P O S I T I O N MAX. BOTTOM VIEW SMALL 9 BUTTON NOVAL P I N BASE

surge lightning to smps

Abstract: 3A2065ELJ
Contextual Info: V er s io n 2 . 2 , 3 0 J u n 2 0 1 1 I CE 3A2 065 ELJ O ff - L in e S M P S Cu r r e n t M o d e C o n tr o lle r wit h in t e g r a te d 6 5 0 V C o o lM OS ® a n d S ta r t u p C e ll L a tc h e d a n d fr e q u e n c y jit te r Mode Po we r M an a ge me nt & Su pp l y

3A2 zener diode

Abstract: zener 3a2 a51 ZENER DIODE Diode zener 3a A43 ZENER DIODE a51 zener ZENER A43 3a20 DAM3A18 Zener Diode 3A2
Contextual Info: SURGE SUPPRESSOR DIODE DAM3A OUTLINE DRAWING Unit in mm inch 7.5 (0.295) φ 1.2 (0.047) Type mark (Red) 27CA 26MIN. (1.02) 59MIN. (2.32) 26MIN. (1.02) Direction of polarity Cathode band (Red) • High transient reverse power capability suitable for protecting automobile electronic

DAM3A18

Abstract: DAM3A10 DAM3A11 DAM3A12 DAM3A13 DAM3A15 DAM3A16 DAM3A20 DAM3A22 for zener DIODE
Contextual Info: SURGE SUPPRESSOR DIODE DAM3A OUTLINE DRAWING Unit in mm inch 7.5 (0.295) φ 1.2 (0.047) Type mark (Red) 27CA 26MIN. (1.02) 59MIN. (2.32) 26MIN. (1.02) Direction of polarity Cathode band (Red) • High transient reverse power capability suitable for protecting automobile electronic

DAM3A18

Abstract: DAM3A10 DAM3A HITACHI a51 ZENER DIODE DAM3A11 DAM3A12 DAM3A13 DAM3A15 DAM3A16 DAM3A20
Contextual Info: SURGE SUPPRESSOR DIODE DAM3A OUTLINE DRAWING Unit in mm inch 7.5 (0.295) φ 1.2 (0.047) Type mark (Red) 27CA 26MIN. (1.02) 59MIN. (2.32) 26MIN. (1.02) Direction of polarity Cathode band (Red) • High transient reverse power capability suitable for protecting automobile electronic

a51 ZENER DIODE

Abstract: A43 ZENER DIODE Zener Diode 3A DIODE zener A43 ZENER A43 DAM3A10 DAM3A47 DAM3A27 zener 3a2 DAM3A18
Contextual Info: SURGE SUPPRESSOR DIODE DAM3A OUTLINE DRAWING 26MIN. 1.02 Direction of polarity 27CA 26MIN. (1.02) 59MIN. (2.32) • 大きな逆方向損失が許容できます。 （自動車電装品の保護用等） • 拡散接合形レジンモールド構造 Type mark (Red)

IDTQS3VH16244

Abstract: QS3VH16244
Contextual Info: IDTQS3VH16244 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH IDTQS3VH16244 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc − Isolation under power-off conditions

Contextual Info: IDTQS3VH16244 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16244 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc − Isolation under power-off conditions

IDTQS3VH16244

Abstract: QS3VH16244
Contextual Info: IDTQS3VH16244 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH IDTQS3VH16244 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc − Isolation under power-off conditions

Contextual Info: IDTQS3VH16244 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH IDTQS3VH16244 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc − Isolation under power-off conditions

Contextual Info: IDTQS3VH16244 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16244 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc − Isolation under power-off conditions

IDTQS3VH16244

Abstract: QS3VH16244
Contextual Info: IDTQS3VH16244 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16244 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc − Isolation under power-off conditions

IDTQS3VH16244

Abstract: QS3VH16244
Contextual Info: IDTQS3VH16244 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16244 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

Contextual Info: IDTQS3VH16244 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH IDTQS3VH16244 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc − Isolation under power-off conditions

diode 3a05

Abstract: 3a05 diode IN4142 3A05 Diode diode with PIV 200 1N4145 COLOR MARKING CODE ON DIODE 1N4142 1IN4139-1N4145 IN4142
Contextual Info: DIODES LIMITED 1N4139-1N4145 SERIES FAIRACRES ESTATE. DEDWORTH ROAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS SINGLE JUNCTION THREE AMPERE SILICON RECTIFIERS M E C H A N IC A L < 4 — .310 MAX - i .050

ALB16244

Abstract: SN74 SN74ALB16244
Contextual Info: SN74 ALB16244 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS SC B S 647A - AU G U S T 1995 - REVISED O C TO BE R 1996 • Member of the Texas Instruments W idebus Family • Schottky Diodes on All Inputs to Eliminate Overshoot and Undershoot 10E [ 1 • Industry Standard ’16244 Pinout

Contextual Info: Philips Semiconductors Product specification 3.3V 16-bit buffer/driver 3-State 74LVT16244B • No bus current loading when output is tied to 5V bus • Latch-up protection exceeds 500mA per JEDEC Std 17 • ESD protection exceeds 2000V per MIL STD 883 Method 3015

Contextual Info: Philips Semiconductors Product specification 3.3V 16-bit inverting buffer/driver 3-State 74LVT16240A • No bus current loading when output is tied to 5V bus • Latch-up protection exceeds 500mA per JEDEC Std 17 • ESD protection exceeds 2000V per MIL STD 883 Method 3015

Contextual Info: INTEGRATED CIRCUITS 74LVT16244B 3.3 V LVT 16-bit buffer/driver 3-State Product data Supersedes data of 1998 Oct 07 Philips Semiconductors 2002 Oct 31 Philips Semiconductors Product data 3.3 V LVT 16-bit buffer/driver (3-State) FEATURES 74LVT16244B DESCRIPTION

Contextual Info: 3.3V CMOS 16-BIT BUFFER/LINE DRIVER PRELIMINARY IDT54/74FCT163244/A Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CEMOS Technology The IDT54/74FCT163244/A 16-bit buffer/line drivers are built using advanced CEMOS, dual metal CMOS technology.

74LVT16244B

Abstract: 4a3 diode 4A2 diode
Contextual Info: INTEGRATED CIRCUITS 74LVT16244B 3.3V LVT 16-bit buffer/driver 3-State Prooduct specification Supersedes data of 1998 Feb 19 IC23 Data Handbook Philips Semiconductors 1998 Oct 07 Philips Semiconductors Product specification 3.3V 16-bit buffer/driver (3-State)

Contextual Info: INTEGRATED CIRCUITS 74LVT16244B 3.3 V LVT 16-bit buffer/driver 3-State Product data Supersedes data of 1998 Oct 07 File under Integrated Circuits, IC23 Handbook Philips Semiconductors 2001 Dec 03 Philips Semiconductors Product data 3.3 V LVT 16-bit buffer/driver (3-State)

Contextual Info: IDT54/74FCT16244T/AT/CT IDT54/74FCT162244T/AT/CT FAST CMOS 16-BIT BUFFER/LINE DRIVER Integrated Device Technology, Inc. FEATURES: • Common features: DESCRIPTION: - 0.5 MICRON CEMOS Technology - High-speed, low-power CEMOS replacement for ABT functions

SN74ALB16244

Contextual Info: SN74ALB16244 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS SCBS647A – AUGUST 1995 – REVISED OCTOBER 1996 D D D D D D D DGG OR DL PACKAGE TOP VIEW State-of-the-Art Advanced Low-Voltage BiCMOS Technology (ALB) Design for 3.3-V Operation Member of the Texas Instruments