3DD13002 Search Results

3DD13002B

Abstract: BR 610v
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR（ NPN ） TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13002N8D TRANSISTOR NPN TO-126 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251-3L TO-252-2L FEATURE • power switching applications 123 1. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251 TO-252-2L FEATURE • power switching applications 123 1. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/3DD13002B TRANSISTOR（ NPN ） FEATURE Power dissipation PCM : 3DD13002 ： 1.2 W （Tamb=25℃） 3DD13002B： 1 W （Tamb=25℃） Collector current ICM :

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TO-92 TRANSISTOR（NPN） FEATURE 1.EMITTER Power Switching Applications 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter 3. BASE

3DD13002B

Abstract: 3DD13002
Contextual Info: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn 3DD13002B TRANSISTOR（ NPN ） TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol

3DD13002

Contextual Info: Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13002 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1.25 1. BASE W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range

to-126 transistor

Abstract: 3DD13002 ib40
Contextual Info: 3DD13002 3DD13002 TO-126 TRANSISTOR NPN FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1.BASE Collector current ICM: 1 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range 2.COLLECTOR 3.EMITTER 123 TJ, Tstg: -55℃ to +150℃

Contextual Info: 3DD13002B Switch Mode NPN Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO

3DD13002

Contextual Info: MACROBIZES CO., LTD. TO-251 Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1.25 1. BASE W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13002 TO-126 TRANSISTOR NPN FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1.BASE Collector current 1 A ICM: Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002N46 TRANSISTOR（NPN） TO-92 FEATURE 3ower 6witching $pplications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value

Contextual Info: TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO:

3DD13002

Contextual Info: 华晶分立器件 3DD13002R6 低频放大管壳额定双极型晶体管 1 概述与特点 4.4max 3DD13002R6 硅 NPN 型功率开关晶体管 主要用于低压电子节能灯 电子镇流器的功率开关 电路 其特点如下 高温特性好 开关速度快

3DD13002

Contextual Info: 3DD13002 TO-126 Plastic-Encapsulate Transistors Transistor NPN FEATURES TO-126 Power dissipation o P CM :1.25 W (Tamb=25 C) Collector current I CM :1 A 1.BASE Collector-base voltage 2.COLLECTOR V (BR)CBO :600 V 3.EMITTER 1 2 3 ELECTRICAL CHARACTERISTICS o

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-126 Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-126 • power switching applications 1.BASE MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Value Unit Collector -Base Voltage 600

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251-3L TO-252-2L FEATURE Power Switching Applications 1. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter

3DD13002B

Contextual Info: 3DD13002B Switch Mode NPN Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO IC Value 400 600 6.0 1.0

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1.25 1. BASE W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage V(BR)CBO:

transistor 3540

Contextual Info: 3DD13002 NPN TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features power switching applications MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage

hfe1

Abstract: 3DD13002 npn 600v to92
Contextual Info: 华晶分立器件 3DD13002 B1 低频放大环境额定双极型晶体管 1 概述与特点 1.5 3DD13002 B1 硅 NPN 型功率开关晶体管 主要用于电子节能灯 电子镇流器及手机充电器的 功率开关电路 其特点如下 击穿电压高 反向漏电流小

hfe1

Abstract: 3DD13002
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251 TO-252-2L FEATURE • power switching applications 1 123 1. BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter

npn 600v to92

Abstract: 3DD13002B TRANSISTOR NPN 3DD13002 3DD13002B transistor 600v. 1a. to 92
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A