4n4001
Abstract: I4N4
Text: G E SOLID 01 STATE DE~J 3fl750fll DDlltflS 0 optoelectronic specification« 7 W / - Î7 “ ’ MILLIMETERS SVM0OI T T nT T m a k . 8 3B Bag A 7.62 REF. B _ 8 64 C .406 .606 E 6 03 t.Ol 1.78 2 26 G 2.60 2.16 H ,203 306 2.64 K M 16 .381 N P 6.63 ft 2.92 3.43
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3fl750fll
4n4001
I4N4
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TRANSISTOR 2n697
Abstract: RCA-2N697 2N697 Transistor Data chart QQ170 25C06
Text: G E SOLID STATE 38 750 81 01 G E SOLID STATE DeT J 3fl750fll 0 0 1 7 0 5 4 3 0 1E 17084 D T -}$ r-l'7 High-Speed Power Transistors_ File Num ber 2N697 16 TERMINAL DESIGNATIONS Silicon N-P-N Planar Transistor For High-Speed Switching Service in Electronic Data-Processing Systems
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2N697
QQ170A4
O-205AD
RCA-2N697
30011s,
TRANSISTOR 2n697
2N697
Transistor Data chart
QQ170
25C06
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Silicon unilateral switch
Abstract: DG1U SUS GE 2N4987 2N4987 equivalent 2N4987 GE 2N4988 2n498 2N4988 soli capacitors
Text: "ÏÏÏ G E SOLID STATE DE|3fl750fll DGlflDll 3 | 0 1E 18011 387 5 08 1 G E S O L I D ST A T E D Unijunction Transistors and Switches 2N4987, 2N4988, 2N4989, 2N4990 T 'Z S -c ^ Silicon Unilateral Switch Applications: • SCR Triggers ■ Frequency Drivers
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3fl750fll
2N4987,
2N4988,
2N4989,
2N4990
2N4987-90
19--Overvoltage
3S750S1
Silicon unilateral switch
DG1U
SUS GE 2N4987
2N4987 equivalent
2N4987
GE 2N4988
2n498
2N4988
soli capacitors
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175C
Abstract: BUX10A RCA-BUX10A transistor hh 06
Text: DI G E SOLI» STATE 387 5081 G E SOLID STATE DÈn|3fl750fll 0017515 0 | ~ ~ 0 T e '~17592 '~ ’ "0 ~ ? > - 7 .J -— ' File Number Kro tieciron t-ower Transistors 1216 High-Current, High-Power
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750ai
O-204AA
RCA-BUX10A
T0-204AA
91cs-ihs2r1
92C3-IZ441R1
3fl750fll
D017STS
BUX10A
175C
BUX10A
transistor hh 06
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RCA-2N6249
Abstract: 2n62501 2N6250 2N6251 clare mercury relay HGP-I004 2N6249 solid state relay 220V 220V 30A Relay i947
Text: 3875081 G E SOLID STATE □ 1 DE I 3fl750fll OOlTlfiT L. High-Voltage Power Transistors File Number 523 2N6249, 2N6250, 2N6251 450-V, 30-A, 175-W Silicon N-P-N Switching Transistors F or S w itc h in g A p p lic a tio n s in Ind ustrial and C o m m e rc ia l E q u ip m e n t
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3fl750fll
1710e!
2N6249,
2N6250,
2N6251
2N6251)
2N6250)
2N6249)
RCA-2N6249,
2N6250
RCA-2N6249
2n62501
2N6251
clare mercury relay
HGP-I004
2N6249
solid state relay 220V
220V 30A Relay
i947
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13001 TRANSISTOR
Abstract: CNY30 CNY30-CNY34 GE SCR 1000 1000C AN006 CNY34 INS080I4
Text: G E SOLI» STATE 01 Optoelectronic Specifications DE|3fl750fll OanflBG 0 | T ^ h 3-7 Photon Coupled Isolator CNY30-CNY34 Ga As Infrared Emitting Diode & light Activated SCR The GE Solid State CNY30 and CNY34 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon con
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3fl750Ã
T-V/-77
CNY30-CNY34
CNY30
CNY34
220VAC
13001 TRANSISTOR
CNY30-CNY34
GE SCR 1000
1000C
AN006
INS080I4
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CDP1804
Abstract: CDP6805
Text: G E SOLID STATE D l D E I 3fl750fll O P l b b ? 1! fi _ :_ CDP68HC68R1, CDP68HC68R2 CMOS 128-Word CDP68HC68R1 and 'rWi>‘ 35 256-Word (CDP68HC68R2) by 8-Bit Static RAMs Product Preview TO P Random-Access Memories (RAMs) -
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3fl750fll
CDP68HC68R1,
CDP68HC68R2
128-Word
CDP68HC68R1)
256-Word
CDP68HC68R2)
92CS-37865
CDP68HC68R2
CDP1804
CDP6805
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ITE4391
Abstract: No abstract text available
Text: DI E SOLI» STATE DE 3fl750fll DD1D17S 1 | 3875081 G E SOLID STATE 2 N 4 3 9 1 -2 N 4 3 9 3 , IT E 4 3 9 1 -IT E 4 3 9 3 G 01E 10978 D 2N4391 - 2N 4393, ITE4391- ITE4393 & N-Channel JFET Switch FEATURES ABSOLUTE MAXIMUM RATINGS • rd5(on <300 Ohms (2N4391)
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3fl750fll
DD1D17S
2N4391
ITE4391-
ITE4393
2N4391)
100Pa
10VAC
2N4392,
2N4393)
ITE4391
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4011-S
Abstract: No abstract text available
Text: G E SOLID STATE 01 m T | 3fl750fll D01 401 1 S | f- ï - 0 ? - 0 ï Data Conversion C ir c u its CA3338 CMOS High-Speed R-2R D/A Converter Product Preview Features: • ■ ■ ■ ■ ■ ■
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3fl750fll
CA3338
16-lead
CA3338
4011-S
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CA747CE
Abstract: CA747E CA741 LM741 null adjustment LM748 10-kilohm RCA-CA1458 CA741CA 942e CA1458
Text: G E SOLID STATE DI 3875081 G E SOLID STATE D E :J 3fl750fll 0Dmi7t, M 01E 14176 D uperanonai Amplifiers CA741, CA747, CA748, CA1458, CA1558, LM741*, LM748*, LM1458*, LM1558* - 7 P - O 5 - J - 0 Operational Amplifiers H ig h -G ain Sing le and Dual O perational Am plifiers
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CA741,
CA747,
CA748,
CA1458,
CA1558,
LM741*
LM748*
LM1458*
LM1558*
RCA-CA1458,
CA747CE
CA747E
CA741
LM741 null adjustment
LM748
10-kilohm
RCA-CA1458
CA741CA
942e
CA1458
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CA3055
Abstract: RCA 7946 i8096
Text: G E SOLI» STATE Power Control Circuits 01 DE|3fl750fll -. QD14S37 ._ ._ _ — CA3085, CA3085A, CA3085B 5 2 -1 /-Z Z Positive Voltage Regulators For Regulated Voltages from 1.7 V to 46 V at Currents up to 100m A Features
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3fl750fll
QD14S37
CA3085,
CA3085A,
CA3085B
CA3085B
CA3085
18--Typical
RCA-2N3772
CA3055
RCA 7946
i8096
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74hct922
Abstract: 74HCT32G 54hct32
Text: T G E SOLI» STATE 01 d F | 3fl750fll 0011403 1 Technical D a ta _ T-43-21 CD54/74HC32 CD54/74HCT32 F ile N u m b e r 1643 High-Speed CMOS Logic Quad 2-Input OR Gate Type Features: • Typical propagation delay - 7 ns @ V co = S V, C l = 15 pF,
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CD54/74HC32
CD54/74HCT32
3fl750fll
T-43-21
RCA-CD54/74HC32
CD54/74HCT32
CD54HC/HCT32
14-lead
CD74HC/HCT32
74hct922
74HCT32G
54hct32
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H11AV1A
Abstract: H11AV1 H11AV2 H11AV3 H11AV2A H11AV3A 0730-2P
Text: G E SOLID STATE 01 DE|3fl750fll 0an70fa O p to e le c tr o n ic s p e c ific a tio n s . Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State HllAV series consists of a gallium arsenide, infrared
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3fl750fll
0an70fa
0730-2P.
H11AV1A,
11AV2A
11AV3A
H11AV2
H11AV3.
H11AV1,
H11AV2,
H11AV1A
H11AV1
H11AV3
H11AV2A
H11AV3A
0730-2P
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2C337
Abstract: 92C5-37555 RFL2N05 RFL2N06 RFP4N05 RFP4N06
Text: 01 3fl750fll 0010113 □ 3 8 7 5 0 8 1 G E S O L ID STATE Standard Power MOSFETs - 01E 18113 RFL2N05, RFL2N06, RFP4N05, RFP4N06 File Number 1497 N-Channel Enhancement-Mode Power Field-Effect Transistors 2 and 4 Amperes, 50 V - 60 V rDs on = 0.60 and 0.750
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3fl750fll
RFL2N05,
RFL2N06,
RFP4N05,
RFP4N06
9ZCS-33741
RFL2N05
RFL2N06
RFP4N05
RFP4N06*
2C337
92C5-37555
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BUY69A
Abstract: RCA-BUY69 BUY69 BUY69B BUY69C SOLID STATE TRANSISTORS C633H
Text: E SOLID STATE" ~0l 3875081 G E SOLID STATE 5T~|3fl750fll D017faBfi fa J - 01E 17628 D Y -Ï3-C Z Pro Electron Power Transistors File Num ber 1237 BUY69A, BUY69B, BUY69C H ig h V o lta g e S ilic o n N - P - N * P o w e r T ra n s is to rs terminal designations
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BUY69A,
BUY69B,
BUY69C
00-1000V
O-204AA
RCA-BUY69
MCS-31034
DD17b31
BUY69A
BUY69
BUY69B
BUY69C
SOLID STATE TRANSISTORS
C633H
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lt 6249
Abstract: Lt 6251
Text: 3875081 G E SOLID STATE □ 1 DE |3fl750fll 0 0 1 7 I M t> | High-Voltage Power Transistors File Number 523 2N6249, 2N6250, 2N6251 450-V, 30-A, 175-W Silicon N-P-N Switching Transistors For S w itchin g A p plications in Industrial and C o m m ercial Equipm ent
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3fl750fll
2N6249,
2N6250,
2N6251
lt 6249
Lt 6251
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2N4990
Abstract: 2N4987 SUS 2N4987 SUS GE 2N4987 2N4989 2N4988 Silicon unilateral switch 42322 DETJ3075001 2N4987-90
Text: G E SOLID STATE □1 DE I 3fl750fll □□1ÛD11 3 | 0 1E 18011 3875081 G E SOLID STATE D . Unijunction Transistors and Switches 2N4987, 2N4988, 2N4989, 2N4990 T ' Z S - c ^ Silicon Unilateral Switch Applications: • SCR Triggers ■ Frequency Drivers ■ Ring Counters
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3fl750fll
2N4987,
2N4988
2N4989
2N4990
2N4987-90
2N4969
S2CS-42T47
J2N2647
001JJF
2N4987
SUS 2N4987
SUS GE 2N4987
Silicon unilateral switch
42322
DETJ3075001
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t1is
Abstract: U202 U200 U201 N-Channel JFET Switch
Text: SOLI» STATE □1 DE [ 3fl750fll 0D11DS5 01E 11052 D U200-U202 N-Channel JFET Switch FEATURES APPLICATIONS • Low Insertion Loss • Good OFF Isolation • Analog Switches • Commutators • Choppers PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted
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0D11DS5
oU200-U202
10seo)
10mW/Â
NOT150
300/i8,
t1is
U202
U200
U201
N-Channel JFET Switch
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2704 eprom
Abstract: eprom 2704 CDP1832 CDP1832C
Text: E SOLI» STATE 17E D • 3fl750fll ÜG25110 7 ■ High-Reliability CMOS LSI Devices CDP1832/3, CDP1832C/3 High-Reliability CMOS 512-Word x 8-Bit Static Read-Only Memory MA7 MA6 M A5 MA4 MA3 M A2 MAI M AO
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3fl750fll
G25110
CDP1832/3,
CDP1832C/3
512-Word
CDP1800
CD4000-series
Specific-55°
2704 eprom
eprom 2704
CDP1832
CDP1832C
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2N3441 RCA
Abstract: No abstract text available
Text: - G E SOLID STATE 3875081 ÔÏE~D~j| 3fl750fll 00173SS fl G E SOLID STATE 17355 0 1 E D J / w 3?“0? General-Purpose Power Transistors •File Number 529 2N3441, 2N6263, 2N6264 Medium-Power Silicon 'N-P-N Transistors Rugged Devices for Intermediate, Power Applications
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3fl750fll
00173SS
2N3441,
2N6263,
2N6264
2N6264:
2N3441
2N6264
2N3441 RCA
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transistor A05
Abstract: 2N6388 npn darlington 2N6386 2N6387 2N6666 2N6667 2N6668 Complementary Darlington Audio Power Amplifier 079V
Text: ÏÏÏ 38 75081 dF | 3 fl? S D Û l Q Q l7E 4fl 7 G E S OL ID S T A T E Darlington Power Transistor» 01E 17248 D T - 3 3 - Z 1 _ ._ 2N6386, 2N6387, 2N6388 File Number 10-Ampere N-P-N Darlington
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2N6386,
2N6387,
2N6388
10-Ampere
2N6388)
2N6386)
O-220AB
transistor A05
npn darlington
2N6386
2N6387
2N6666
2N6667
2N6668
Complementary Darlington Audio Power Amplifier
079V
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C2688
Abstract: TA7270 TA7290 2n5784 pnp transistor 2N5784 2N5783 2n5783 rca RCA-2N5781 2n5782 RCA tRANSISTOR c2688
Text: Öl E SOLI» STATE 387 508 1 G E SOLID STATE General-Purpose Power Transistors ' DE | 3fl750öl □□173Tb □ X " 01E 17396 " D T ' ?S '- f f " T ' 2 T * ' 1 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786
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3a750Ã
2N5781,
2N5782,
2N5783,
2N5784,
2N5785,
2N5786
RCA-2N5781
2N5783
C2688
TA7270
TA7290
2n5784 pnp transistor
2N5784
2n5783 rca
2n5782 RCA
tRANSISTOR c2688
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T4700B RCA
Abstract: T4700D T4700N T4700 T4700B T4700D RCA 17814 T4700M I342
Text: G E SOLI» STATE "□1 D E | 3fi7S0fll DD17fim 3 0 1E 17814 3875081 G E S O L I D S T A T E D J £ _ Trfacs File Number 300 T4700 Series 15-Ampere Silicon Triacs For Phase-Control and Load-Switching Applications Features: TERMINAL DESIGNATIONS
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DD17fim
T4700
15-Ampere
3fl750fll
92LS-I749R2
92LS-I342R3
T4700B RCA
T4700D
T4700N
T4700B
T4700D RCA
17814
T4700M
I342
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H22B4
Abstract: H22B5 H22B6 H22B CEUS
Text: G E SOLI» STATE DE 1 3fl7S0fll 01 4 | Optoelectronic Specifications. T - V / - 7 J 1mm Aperture Photon Coupled Interrupter Module H22B4,H22B5,H22B6 T he G E Solid State H22B Interrupter M odule is a gallium arse nide infrared emitting diode coupled to a silicon darlington con
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H22B4
H22B5
H22B6
750li
H22B6
H22B
CEUS
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