H11AV1 Search Results

H11AV2

Abstract: H11AV1A H11AV1M
Contextual Info: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum

H11AV2A

Abstract: h11av2 H11AV1A harris H11AV1 H11AV3 H11AV1A H11AV3A 0730-2P H11AV3T
Contextual Info: Optofsolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e H I IAV series consists o f a gallium arsen id e, in fra re d em itting d io d e co u p led with a silicon p h o to tra n sisto r in a dual in-line

H11AV1

Contextual Info: MOTOROLA O rder this docum ent by H11AV1/D SEMICONDUCTOR TECHNICAL DATA & ® TO VDE UL CSA SETI SEMKO DEMKO NEMKO BABT H11AV1,A* H11AV2,A [C TR = 100% Min] GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [C TR = 50% Min] 'M o to ro la Preferred Devices

BSI approved - Certificate No. 8001

Contextual Info: H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l l l 2.54 7.0 6.0 VDE 0884 in 3 available lead form : - STD - G form

H11AV1M

Abstract: circuit infrared phototransistor for tv H11A h11av H11AV1AM H11AV1AVM H11AV1SM H11AV1SR2M H11AV2AM H11AV2M
Contextual Info: H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Phototransistor Optocouplers Features Description • H11AV1M and H11AV2M feature 0.3" input-output The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line white package.

H11AV1

Abstract: E244343 OPTO611
Contextual Info: Global Supplier of Optoelectronic Solutions H11AV1 ALL Product Lead Free, RoHs Compliant UL # E244343 Features: Schematic: 1 6 2 5 3 4 1. Current transfer ratio CTR 100-300% at IF=10mA Vce=10V 2. High isolation voltage between input and output (Viso = 5300Vrms, 7500Vpk).

H11AV1A

Abstract: H11AV1 H11AV2 H11AV2A h11av2 equivalent
Contextual Info: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum

H11AV1M

Contextual Info: H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Phototransistor Optocouplers Features Description • H11AV1M and H11AV2M feature 0.3" input-output The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line white package.

transistor c1684

Abstract: h11av2 equivalent H11AVI OPTOCOUPLER 636 H11AV3 H11AV2A H11AV3A 113t CL685
Contextual Info: QUALITY TECHNOLOGIES TRANSISTOR OUTPUT OPTOCOUPLER H11AV1 H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A PACKAGE DIMENSIONS I G.8G 6.36 I ¥ J W The H11AV series consists of a gallium arsenide infrared emitting diode coupled with an NPN silicon phototransistor in a dual-in-line package. The H11AV1A,

1AV3A

Contextual Info: Ö U AL IT Y TECHNOLOGIES CORP S7E P 74bbfl51 0 0 0 4 1 7 b OOfl • ö T Y Optoisolator Specifications_ H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The HI 1AV series consists o f a gallium arsenide, infrared emitting

H11AV1

Abstract: H11AV2 H11AV1A H11AV2A H11AV1M
Contextual Info: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum

Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M PACKAGE OUTLINE H11AV2A-M SCHEMATIC 1 6 2 5 6 6 3 1 NC 4 H11AV1S-M, H11AV2S-M 1 H11AV1-M, H11AV2-M PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 H11AV1A-M, H11AV2A-M DESCRIPTION

H11AV1A

Abstract: H11AV2A AV2A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO VDE UL & ® ® ® ® C8A 8ET1 SEMKO DEMKO NEMKO BABT H11AV1.A* H11AV2,A [CTR X100% Min GlobalOptoisolator 6-Pln DIP Optoisolators Transistor Output [CTR » 60% Min] ’ Motorola Preferred Devices The H11AV1 ,A and H11 AV2.A devices consist of a gallium arsenide infrared

smd transistor 662

Abstract: h11av2 equivalent H11AV3 E91231 H11AV H11AV1 H11AV1X H11AV2 H11AV2X H11AV3X
Contextual Info: H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm APPROVALS z UL recognised, File No. E91231 Package System " GG " 'X' SPECIFICATION APPROVALS z z VDE 0884 in 3 available lead form : - STD - G form

Contextual Info: MOTOROLA Order this document by H11AV1/D SEMICONDUCTOR TECHNICAL DATA ® TO VDE UL CSA SE TI SEM KO DEM KO NEMKO BABT H11AV1,A* H11AV2,A [C TR = 100% Min] G lo b a l O p to iso la t o r 6-Pin DIP Optoisolators Transistor Output [C TR = 50% Min] ’ M otorola Preferred Devices

H11AV3

Abstract: H11AV1A H11AV2A H11AV3A AN978 VDE0160 VDE0832 VDE0833 H11AV2
Contextual Info: MOTOROLA B SEM ICONDUCTOR TECHNICAL DATA H11AV1,A H11AV2,A H11AV3,A 6-Pin D IP O p to iso la to rs T ransisto r Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. •

H11AV2 8360

Abstract: H11AV1 Application H11AV1A H11AV1-M H11AV1SV-M h11av2 equivalent H11AV2A H11AV1 H11AV1A-M H11AV1S-M
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M PACKAGE OUTLINE H11AV2A-M SCHEMATIC 1 6 2 5 6 6 3 1 NC 4 H11AV1S-M, H11AV2S-M 1 H11AV1-M, H11AV2-M PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 H11AV1A-M, H11AV2A-M DESCRIPTION

1AV3A

Abstract: H11AV1A H11AV1 H11AV2A H11AV2 H11AV3 H11AV3A 1av3 0730-2P ic 5304 1a
Contextual Info: G E SOLI» 01 STATE 3>E § 3 f l ? 5 0 ö l ODIITDb O ptoelectronic specifications . Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A G a As Infrared Emitting D iode & N P N Silicon Photo-T ransistor T he G E Solid State H11AV series consists of a gallium arsenide, infrared

H11AV1M

Abstract: H11AV1AM H11AV1AVM H11AV1SM H11AV1SR2M H11AV2AM H11AV2M H11AV2SM
Contextual Info: H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Phototransistor Optocouplers Features Description • H11AV1M and H11AV2M feature 0.3" input-output The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line white package.

H11AV3A

Abstract: H11AV1A H11AVI H11AV1 H11AV2 H11AV3 H11AV2A
Contextual Info: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA & TO VDE UL CSA SETI SEM KO <§> B S DEM KO N EM KO BAB T H11AV1,A* H11AV2,A H11AV3,A [CTR = 1 0 0 % Min 6-Pin D IP O ptoisolators Transistor Output [C TR * 5 0 % Min] [CTR = 2 0 % Min] T he H11AV1.A, H 11A V 2.A and H 11A V 3.A devices consist of a gallium arsenide infrared

h11av2 equivalent

Abstract: H11AV1A-M H11AV1-M H11AV1S-M H11AV2 H11AV2A H11AV2A-M H11AV2-M H11AV2S-M H11AV1
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M PACKAGE OUTLINE H11AV2A-M SCHEMATIC 1 6 2 5 6 6 3 1 NC 4 H11AV1S-M, H11AV2S-M 1 H11AV1-M, H11AV2-M PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 H11AV1A-M, H11AV2A-M DESCRIPTION

h11av2 equivalent

Abstract: E91231 H11AV H11AV1 H11AV1X H11AV2 H11AV2X H11AV3 H11AV3X BSI approved - Certificate No. 8001
Contextual Info: H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l l l 2.54 7.0 6.0 VDE 0884 in 3 available lead form : - STD - G form

H11AV1A

Abstract: H11AV1 H11AV2 H11AV3 H11AV2A H11AV3A 0730-2P
Contextual Info: G E SOLID STATE 01 DE|3fl750fll 0an70fa O p to e le c tr o n ic s p e c ific a tio n s . Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State HllAV series consists of a gallium arsenide, infrared

eh11a

Abstract: 1AV Series H11AV1A H11AV1 H11AV2 H11AV3 H11AV2A H11AV3A 0730-2P 11AV2
Contextual Info: Optoisolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e H I 1AV series consists o f a gallium arsenide, in fra re d em itting d io d e co u p led w ith a silicon p h o to tra n sisto r in a dual in-line