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Linear Integrated Systems 3N163-SOT-143-4L-ROHS P-CHANNEL, SINGLE ENHANCEMENT MO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	3N163-SOT-143-4L-ROHS	Cut Tape	7,071		1	1 $6.05 10 $4.052 100 $2.9214 1000 $2.8917 10000 $2.8917	Buy Now
	3N163-SOT-143-4L-ROHS	Digi-Reel	6,000		1	1 $6.05 10 $4.052 100 $2.9214 1000 $2.8917 10000 $2.8917	Buy Now
	3N163-SOT-143-4L-ROHS	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $2.3625	Buy Now
Linear Integrated Systems 3N163-TO-72-4L-ROHS P-CHANNEL, SINGLE ENHANCEMENT MO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	3N163-TO-72-4L-ROHS	Bulk	680		1	1 $9.71 10 $6.67 100 $4.9532 1000 $4.425 10000 $4.425	Buy Now
Vishay Siliconix 3N163 MOSFET P-CH 40V 50MA TO72
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	3N163	Tube			200	1 - 10 - 100 - 1000 $14.5 10000 $14.5	Buy Now
ES Components	3N163		13,758			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix 3N163-2 MOSFET P-CH 40V 50MA TO72
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	3N163-2	Tube			20	1 - 10 - 100 $47.5 1000 $47.5 10000 $47.5	Buy Now
Vishay Siliconix 3N163-E3 MOSFET P-CH 40V 50MA TO72
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	3N163-E3	Bulk			200	1 - 10 - 100 - 1000 $14.5 10000 $14.5	Buy Now

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3N163 Datasheets (29)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
3N163	Calogic	40 V, P-Channel enhancement mode JFET general purpose amplifier switch	Original	PDF	27.13KB	2
3N163	Linear Integrated Systems	P-CHANNEL ENHANCEMENT MODE MOSFET	Original	PDF	15.25KB	2
3N163	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 50MA TO-72	Original	PDF		5
3N163	Vishay Telefunken	TRANS MOSFET P-CH 40V 0.05A 4TO-206AF	Original	PDF	48.45KB	4
3N163	Calogic	P-Channel Enhancenment mode MOSFET General Purpose Amplifier Switch	Scan	PDF	63.52KB	2
3N163	General Instrument	Short Form Data 1976	Short Form	PDF	77.79KB	1
3N163	Intersil	Shortform Data Book 1983/4	Short Form	PDF	38.98KB	1
3N163	Intersil	P-channel enchancement mode MOSFET general purpose amplifier/switch.	Scan	PDF	72.93KB	2
3N163	Intersil	Data Book 1981	Scan	PDF	47.19KB	1
3N163	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	29.97KB	1
3N163	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	111.55KB	1
3N163	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	33.07KB	1
3N163	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	165.65KB	1
3N163	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	155.93KB	1

3N163	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	83.41KB	1
3N163	Siliconix	MOSPOWER Design Data Book 1983	Scan	PDF	80.98KB	2
3N163	Siliconix	FET Design Catalogue 1979	Scan	PDF	48.35KB	1
3N163	Vishay Siliconix	Shortform Siliconix Datasheet	Short Form	PDF	182.74KB	1
3N163-2	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 50MA TO-72	Original	PDF		5
3N163-2	Vishay Telefunken	TRANS MOSFET P-CH 40V 0.05A 4TO-206AF	Original	PDF	48.45KB	4

3N163 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
3N163 Abstract: TO72 package Contextual Info: 3N163 P-CHANNEL MOSFET The 3N163 is an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.	Original	3N163 3N163 375mW TO72 package	PDF
Contextual Info: jre s ft 3N163 SERIES P-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY B O T T O M VIEW TO -7 2 TO-206AF PART NUM BER V (BR\|DSS 3N163 -40 250 -50 3N164 -30 300 -50 "W 1 • d (A) 1 2 3 4 Performance Curves: MRA DRAIN G ATE SUBSTR ATE, C A S E SO URCE	OCR Scan	3N163 O-206AF) 3N164	PDF
3N163 Abstract: 3N164 3N170 Contextual Info: G E SOLI» STATE DE\|3fl7S0fil D Gli DIS 1 \| DI 3875081 G E SOLID STATE 01E 11015 3N163, 3N164 3N163, 3N164 P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch FEATURES • • • • T - 3 7 - 3 5 ABSOLUTE MAXIMUMRATINGS Notei (Ta = 25°C unless otherwise noted)	OCR Scan	3N163, 3N164 T-37-35 3N163 -10mA 3N163 3N164 3N170	PDF
electrometer Abstract: 3N163 3N164 Contextual Info: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18	Original	3N163/3N164 3N163 3N164 3N163/164 18-Jul-08 electrometer 3N163 3N164	PDF
3N164 Abstract: 3N163 Contextual Info: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18	Original	3N163/3N164 3N163 3N164 3N163/164 P-37404--Rev. 04-Jul-94 3N164 3N163	PDF
3N163 Abstract: 3N164 Contextual Info: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18	Original	3N163/3N164 3N163 3N164 3N163/164 P-37404--Rev. 04-Jul-94 3N163 3N164	PDF
3n163 Abstract: P-Channel MOSFETs Contextual Info: Part No. 3N163-E3 P-Channel MOSFETs Single Configuration Package: TO-72 VDS (Max)(V): -70 ID (Max)(A): -30 RDS(on) Max (Ω) @ VGS=10V: 250 @ 20V PD (Max) (W): 0.375	Original	3N163-E3 3n163 P-Channel MOSFETs	PDF
3N163 Abstract: 3N164 Contextual Info: 3N163/164 Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 -40 -2 to -5 250 -5 0.7 18 3N164 -30 -2 to -5 300 -3 0.7 18 Features	Original	3N163/164 3N163 3N164 3N163/164 P37404Rev. 3N163 3N164	PDF
3N163 Abstract: 3N164 3N170 Contextual Info: D M üm 3N163, 3N164 P-Channel Enhancem ent Mode MOS FIET FEATURES • V ery High Input Impedance • High Gate Breakdown • Fast Switching • Low Capacitance PIN CONFIGURATION CHIP TOPOGRAPHY 1503- 2! MAXIMUM RATINGS @ 2 5 °C ambient unless noted} 3 N 163	OCR Scan	3N163, 3N164 3N163 3N164 1503-Z -10mA 3N170	PDF
Contextual Info: 3N163. 3N164. LINEAR SYSTEMS P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted)	OCR Scan	3N163. 3N164. 3N163 3N164 375mW 300ms.	PDF
3N163-3N164 Contextual Info: 3N163. 3N164 LINEAR SYSTEMS P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage 3N163 3N164 Transient G-S Voltaae (NOTE 1) Drain Current Storage Temperature	OCR Scan	3N163. 3N164 3N163 3N164 375mW 200ns 300ms. 3N163-3N164	PDF
ultra low igss pA Abstract: electrometer ultra low igss High Conductance Low Leakage Diode To-206AF 3N163 3N164 Contextual Info: 3N163/3N164 P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18 Features	Original	3N163/3N164 3N163 3N164 3N163/164 P-37404--Rev. 04-Jul-94 ultra low igss pA electrometer ultra low igss High Conductance Low Leakage Diode To-206AF 3N163 3N164	PDF
3n164 Contextual Info: TY P ES 3N163, 3N164 P-C H A N N EL EN H A N C EM EN T-T YP E IN S U L A T E D -G A T E F IE L D -E F F E C T T R A N S IS T O R S B U L L E T I N N O . D L -S 7 2 1 1 7 5 0 , J U L Y 1 9 7 2 - R E V 1 S E D N O V E M B E R 1 9 7 2 ENHANCEMENT-TYPE"!" MOS SILIC O N TRAN SISTO RS	OCR Scan	3N163, 3N164	PDF
Contextual Info: CT"Silicoriix MRA P-Channel Enhancement-Mode MOSFET in c o r p o r a te d lw l • TYPE PACKAGE DEVICE Single TO-72 T0206AF • 3N163,3N164 Single Chip • Available as MRA1CHP TYPICAL CHARACTERISTICS Output Characteristics Transfer Characteristics VDS (V)	OCR Scan	T0206AF) 3N163 3N164	PDF

3N163 Abstract: 3N163-64 3N164 Contextual Info: P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch 3N163/3N164 ABSOLUTE MAXIMUM RATINGS Note 1 (Ta = 25°C unless otherwise specified) FEATURES • • • • Very High Input Impedance High Gate Breakdown Fast Switching Low Capacitance Drain-Source or Drain-Gate Voltage	OCR Scan	3N163/3N164 to-72 3N163 3N164. 3N163. 3N164 -10mA 200ns 3N163 3N163-64 3N164	PDF
Contextual Info: 3N163. 3N164 LINEAR SYSTEMS P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted)	OCR Scan	3N163. 3N164 3N163 3N164 375mW 3N163) 3N164) 200ns 300ms.	PDF
3N163 Abstract: 3N164 Contextual Info: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage	Original	3N163, 3N164 3N163 375mW RIN10M 300ms. 3N163 3N164	PDF
Contextual Info: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise stated Drain-Source or Drain-Gate Voltage 3N163 -40V	Original	3N163, 3N164 3N163 375mW2 OT-143 350mW3 OT-143	PDF
3N163 Abstract: 3N164 Contextual Info: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18	Original	3N163/3N164 3N163 3N164 3N163/164 08-Apr-05 O206AF 06-Jul-01 S-03946--Rev. 09-Jul-01 3N163 3N164	PDF
3n164 equivalent Abstract: 3N163 3N163-64 3N164 Contextual Info: P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch CORPORATION 3N163 / 3N164 ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) FEATURES • Very High Input Impedance • High Gate Breakdown Switching • Fast • Low Capacitance	Original	3N163 3N164 3N163. 3N164. -10mA, 3N163 3n164 equivalent 3N163-64 3N164	PDF
3n163 Contextual Info: 3N163 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME \| CATALOG \| CART \|EXPRESS CHECKOUT \| PARTS WATCH \| NEW ITEMS \|RFQ\| Home 3N163 Availability Online Store Diodes	Original	3N163 3N163 STV3208 1N4510 500ns) LM3909N	PDF
3N163 Abstract: 3N164 3N165 3N166 3N169 3N172 3N173 3N188 3N189 3N190 Contextual Info: » M © Ï F ©Ä¥Ä[L© LOW P O W E R FIELD E FFE C T T R A N S IS T O R S Typ« Number Case Style (TO - 3N163 3N164 3N172 3N173 72 72 72 72 Igss Max (PA) Min Geometry V(Br)da* Min (V) FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 10 10 200 200 2.0 2.0	OCR Scan	3N163 3N164 3N172 3N173 2000u 1500u 4000u 3N165 3N166 3N169 3N188 3N189 3N190	PDF
Contextual Info: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18	Original	3N163/3N164 3N163 3N164 3N163/164 08-Apr-05	PDF
M116 CALOGIC Contextual Info: Calogic, LLC 237 Whitney Place Fremont, CA 94539 Tel: 510-656-2900 Fax: 510-651-1076 M OSFET'S lgss V gs t h r ds( on ) cr ss P/ N ( pA( m a x ) ) ( V( m ax) ( oh m ( m a x ) ) ( pf( m a x ) ) 3N163 - 10 -5 250 .7 3N164 - 10 -5 300 .7 3N165 - 10 -5 300	Original	3N163 3N164 3N165 3N166 3N170 3N171 3N172 3N173 3N190 3N191 M116 CALOGIC	PDF

3N163 Search Results

3N163 Price and Stock

Linear Integrated Systems 3N163-SOT-143-4L-ROHS

Linear Integrated Systems 3N163-TO-72-4L-ROHS

Vishay Siliconix 3N163

Vishay Siliconix 3N163-2

Vishay Siliconix 3N163-E3

3N163 Datasheets (29)

3N163 Datasheets Context Search

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M116 CALOGIC