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    3N189 Search Results

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    3N189 Price and Stock

    Solitron Devices Inc 3N189

    SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.03A I(D), 25V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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    3N189 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3N189 Calogic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier Scan PDF
    3N189 General Instrument Short Form Data 1976 Short Form PDF
    3N189 Intersil Shortform Data Book 1983/4 Short Form PDF
    3N189 Intersil Dual P-channel enchancement mode MOSFET general purpose amplifier. Scan PDF
    3N189 Intersil Data Book 1981 Scan PDF
    3N189 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    3N189 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    3N189 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N189 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3N189 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N189 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    3N189 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3609

    Abstract: 2N4120 2N4067 2N5548 diode 600m nec 500t 3sj11a 3n156 3N155 to99 mosfet
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (S) Max (V) elN Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style P-Chann I Enhanc ment-Typ , (Cont'd) 5 10 15 20 25 30 TP0102N3 TPOS02N3


    Original     		PDF TP0102N3 TPOS02N3 TP0102N2 TP0602N2 2N3609 MFE823 2N4352 3N208 2N4120 2N4067 2N5548 diode 600m nec 500t 3sj11a 3n156 3N155 to99 mosfet

    2N4351 MOTOROLA

    Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
    Text: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132


    Original     		PDF 2SK355 IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 2N4351 MOTOROLA MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76

    7157B

    Abstract: C108D
    Text: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 D12345678926ABCDDDEFFFDE D DDDDDDDD D DDDDDDDD D D FD7 D8DEDEFEDD F!DFD"#$D  "F%D8&D'FD5 3 *+,-D5()&D.27B9D.E&D8D *+DFFFE


    Original     		PDF 12345678926ABCD 27B9D. 34516789A 1BC8DE9C5181F C55791 4D31C 7E1D71C854 D13851C D397E 79D1D38D18 7157B C108D

    3N188

    Abstract: 3N190 3N189 3N191
    Text: □1 SOLID S T A T E DEJ3Ö750Ö1 0 0 1 1 D E 3 fl ^ 7 T - - 2 .7 3N188-3N191 3N188-3N191 Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • Very High Input impedance • High Gate Breakdown 3N190-3N191 • Zener Protected Gate 3N188-3N189


    OCR Scan     		PDF 3N188-3N191 3N188 3N189 3N190, 3N191 10sec) 300mW 300ns; 3N190 3N189 3N191

    Untitled

    Abstract: No abstract text available
    Text: CALOGIC CORP MAE J> 1Ö4M322 00003SM 3 • C G C vJ 3N188-3N181 'T Z FEATURES • • • • l- 'Z I ABSOLUTE MAXIMUM RATINGS Ta - 25°C unless otherwise specified Very High Input Impedance High Gate Breakdown 3N190-3N191 Zener Protected Gate 3N188-3N189


    OCR Scan     		PDF 4M322 00003SM 3N188-3N181 3N190-3N191 3N188-3N189 3N188, 3N189 3N190, 3N191 -500nA,

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    3N188

    Abstract: 3N190 3N183 3N183-3N191 AGSA 50 3N189 3N191 AGSA
    Text: O M IÜ m 3N188-3N191 Dual P-Channel Enhancem ent M o d e MOS F È T FEA TU RES • V ery High Input Im pedance • • High Gate Breakdow n 3N 1 9 0 -3 N 191 « V g & T H Matched Zener Protected gate 3 N 188-3N 189 • Vg & (TH) Tracking • Lo w Capacitance


    OCR Scan     		PDF 3N183-3N191 3N190-3N191 3N188-3N189 2506C 3N188 3N190 3N189 3N191 --15V, 3N190 3N183 AGSA 50 3N191 AGSA

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    2N4044

    Abstract: 2N4045 2N4100 2N4878 3N165 3N166 3N188 3N189 3N190 3N191
    Text: 1. DISCRETES Differential Amplifiers — Dual Monolithic P-Channel MOSFETS Enhancement Ordering Information Preferred P irt Number V osi th) min/max V Package BVd s s min/max ta s s max •g s s max V PA PA Vg S 1-2 max r C)S(on) max !) talon) min/max mA


    OCR Scan     		PDF 3N165 T0-99 3N166 3N188 3N189 3N190 2N4044 2N4045 2N4100 2N4878 3N191

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    3N188

    Abstract: X3N189 3N189 3N190 3N191 X3N188 X3N190 X3N191
    Text: CA LO GI C CORP 4ÖE ]> lflMM3E2 0 0 G 0 3 S M 3 • C G C h 3N188-3N191 Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N188-3N191 'T Z 't- 'Z n FEATURES • • • • A B S O L U T E MAXIMUM RATING S T a - 25°C unless otherwise specified


    OCR Scan     		PDF 00G03SM 3N188-3N191 3N188, 3N189 3N190, 3N191 10sec) -500nA, -500pA -500HA, 3N188 X3N189 3N189 3N190 3N191 X3N188 X3N190 X3N191

    IN5314

    Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
    Text: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)


    OCR Scan     		PDF UC4250* UC42500 MIL-STD-883C, 19S00/ 2N7109* SDF8200 FMN35 SDF8201Â FMNZ35 SDF8202 IN5314 IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297

    2NB906

    Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
    Text: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style


    OCR Scan     		PDF UC4250» UC4250C» MIL-STD-883C, 2N2609 2N3821 2N3822 2N3823 2N4856 2N4857 2N48S8 2NB906 IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92

    3N188

    Abstract: 3N189
    Text: -Jolitron P -C H A N N E L E N H A N C E M E N T DUAL M O S FET Devices. Inc. CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum .035" 0.869mm Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .029" (0.737mm) It is advisable that; a) the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan     		PDF 889mm) 737mm) 0254mm) 3N188 3N189

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    2M5457

    Abstract: SOT-23 Rod MOSFET P channel SOT-23 N JFET
    Text: Discretes continued Low Leakage Diodes JFET Amplifier Applications High G ain P/N P/N Id s s •g s s m A (m in ) pA(m a x) gis m S (m in ) N 3.0 3.5 4.0 4.0 6.0 20 20 20 5 5 5 20 20 5 TO-92 TO-92 TO-92 TO-92 TO-92 N N N N N N P P 5 5 10 20 20 5 TO-92 TO-92


    OCR Scan     		PDF 2N4416/A 2N5484 2N5485 2N5486 PN4416 SST271 2M5457 2N5458 2N5459 DPAD10 SOT-23 Rod MOSFET P channel SOT-23 N JFET

    Untitled

    Abstract: No abstract text available
    Text: M [D yj© T © ä t ä [l ( P -C H A N N E L E N H A N C E M E N T DUAL M O S FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ( 0 .i ASSEMBLY RECOMMENDATIONS .029" (0.737mm) It is advisable that:


    OCR Scan     		PDF 0254mm) -10jiA -10mA, -100/iA 2m55b 000M0L

    TIS88A equivalent

    Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
    Text: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.


    OCR Scan     		PDF 20x40 111x109 TIS88A equivalent 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent

    3N163

    Abstract: 3N164 3N165 3N166 3N169 3N172 3N173 3N188 3N189 3N190
    Text: » M © Ï F ©Ä¥Ä[L© LOW P O W E R FIELD E FFE C T T R A N S IS T O R S Typ« Number Case Style (TO - 3N163 3N164 3N172 3N173 72 72 72 72 Igss Max (PA) Min Geometry V(Br)da* Min (V) FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 10 10 200 200 2.0 2.0


    OCR Scan     		PDF 3N163 3N164 3N172 3N173 2000u 1500u 4000u 3N165 3N166 3N169 3N188 3N189 3N190

    2N4360

    Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
    Text: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.


    OCR Scan     		PDF MFE2001 MFE2C04 MFE2005 MFE2006 MFE2133 MPF102 MPF108 MPF109 MPF111 MPF112 2N4360 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451

    FMN1

    Abstract: No abstract text available
    Text: M M © ¥ © M M .© LOW POW ER FIELD EFFECT TRANSISTORS m m nnn Cam Styla T O - Geometry V(Br)da Min (V) 3N163 3N164 3N172 3N173 72 72 72 72 FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 3N190 3N191 99 99 99 99 99 99 Mas Max (nA) Max (ohms) 5.0 5.0 5.0 5.0


    OCR Scan     		PDF 3N163 3N164 3N172 3N173 2000u 1500u 4000u 4000u FMN1

    e420 dual jfet

    Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
    Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF