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    3N164 Price and Stock

    Suntsu Electronics Inc STC22K33N16-40.000M

    XTAL OSC TCXO 40.0000MHZ SNWV
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    DigiKey STC22K33N16-40.000M Bulk 100 1
    • 1 $2.63
    • 10 $2.571
    • 100 $2.1426
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    Vishay Siliconix 3N164

    MOSFET P-CH 30V 50MA TO72
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    DigiKey 3N164 Tube 200
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    Bristol Electronics 3N164 10 1
    • 1 $18.72
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    Quest Components 3N164 159
    • 1 $2.25
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    3N164 42
    • 1 $40
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    3N164 8
    • 1 $20.28
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    Vishay Sfernice RSK33N164KFB0325

    SFERNICE THIN FILMS
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    DigiKey RSK33N164KFB0325 Tray 100
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    Vishay Intertechnologies RSK33N164KFB0325

    RSK 33N 164K 1% 0,1% R0325 E - Waffle Pack (Alt: RSK33N164KFB0325)
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    Avnet Americas RSK33N164KFB0325 Waffle Pack 23 Weeks 100
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    Newark RSK33N164KFB0325 Bulk 100
    • 1 -
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    Calogic Inc 3N164

    P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch
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    Future Electronics 3N164 Bag 500
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    Karl Kruse GmbH & Co KG 3N164 500
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    NAC 3N164 500
    • 1 $7.47
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    Find more 3N164 price and stock on Findchips.com

    3N164 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3N164 Calogic 40 V, P-Channel enhancement mode JFET general purpose amplifier switch Original PDF
    3N164 Linear Integrated Systems P-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    3N164 Vishay Intertechnology P-Channel Enhancement-Mode MOSFET Transistor Original PDF
    3N164 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 50MA TO-206AF Original PDF
    3N164 Calogic P-Channel Enhancenment mode MOSFET General Purpose Amplifier Switch Scan PDF
    3N164 General Instrument Short Form Data 1976 Short Form PDF
    3N164 Intersil P-channel enchancement mode MOSFET general purpose amplifier/switch. Scan PDF
    3N164 Intersil Shortform Data Book 1983/4 Short Form PDF
    3N164 Intersil Data Book 1981 Scan PDF
    3N164 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    3N164 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    3N164 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N164 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N164 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3N164 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    3N164 Siliconix FET Design Catalogue 1979 Scan PDF
    3N164 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    3N164CHP Unknown Shortform Datasheet & Cross References Data Short Form PDF

    3N164 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    electrometer

    Abstract: 3N163 3N164
    Text: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18


    Original     		PDF 3N163/3N164 3N163 3N164 3N163/164 18-Jul-08 electrometer 3N163 3N164

    3N164

    Abstract: 3N163
    Text: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18


    Original     		PDF 3N163/3N164 3N163 3N164 3N163/164 P-37404--Rev. 04-Jul-94 3N164 3N163

    3N163

    Abstract: 3N164
    Text: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18


    Original     		PDF 3N163/3N164 3N163 3N164 3N163/164 P-37404--Rev. 04-Jul-94 3N163 3N164

    3N163

    Abstract: 3N164
    Text: 3N163/164 Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 -40 -2 to -5 250 -5 0.7 18 3N164 -30 -2 to -5 300 -3 0.7 18 Features


    Original     		PDF 3N163/164 3N163 3N164 3N163/164 P37404Rev. 3N163 3N164

    ultra low igss pA

    Abstract: electrometer ultra low igss High Conductance Low Leakage Diode To-206AF 3N163 3N164
    Text: 3N163/3N164 P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18 Features


    Original     		PDF 3N163/3N164 3N163 3N164 3N163/164 P-37404--Rev. 04-Jul-94 ultra low igss pA electrometer ultra low igss High Conductance Low Leakage Diode To-206AF 3N163 3N164

    Untitled

    Abstract: No abstract text available
    Text: 3N164 P-CHANNEL MOSFET The 3N164 is an enhancement mode P-Channel Mosfet The 3N164 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		PDF 3N164 3N164 375mW

    3N163

    Abstract: 3N164
    Text: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage


    Original     		PDF 3N163, 3N164 3N163 375mW RIN10M 300ms. 3N163 3N164

    Untitled

    Abstract: No abstract text available
    Text: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise stated Drain-Source or Drain-Gate Voltage 3N163 -40V


    Original     		PDF 3N163, 3N164 3N163 375mW2 OT-143 350mW3 OT-143

    3N163

    Abstract: 3N164
    Text: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18


    Original     		PDF 3N163/3N164 3N163 3N164 3N163/164 08-Apr-05 O206AF 06-Jul-01 S-03946--Rev. 09-Jul-01 3N163 3N164

    3n164 equivalent

    Abstract: 3N163 3N163-64 3N164
    Text: P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch CORPORATION 3N163 / 3N164 ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) FEATURES • Very High Input Impedance • High Gate Breakdown Switching • Fast • Low Capacitance


    Original     		PDF 3N163 3N164 3N163. 3N164. -10mA, 3N163 3n164 equivalent 3N163-64 3N164

    Untitled

    Abstract: No abstract text available
    Text: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18


    Original     		PDF 3N163/3N164 3N163 3N164 3N163/164 08-Apr-05

    M116 CALOGIC

    Abstract: No abstract text available
    Text: Calogic, LLC 237 Whitney Place Fremont, CA 94539 Tel: 510-656-2900 Fax: 510-651-1076 M OSFET'S lgss V gs t h r ds( on ) cr ss P/ N ( pA( m a x ) ) ( V( m ax) ( oh m ( m a x ) ) ( pf( m a x ) ) 3N163 - 10 -5 250 .7 3N164 - 10 -5 300 .7 3N165 - 10 -5 300


    Original     		PDF 3N163 3N164 3N165 3N166 3N170 3N171 3N172 3N173 3N190 3N191 M116 CALOGIC

    3N163

    Abstract: 3N163-64 3N164
    Text: P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch LLC 3N163 / 3N164 ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) FEATURES • Very High Input Impedance • High Gate Breakdown Switching • Fast • Low Capacitance


    Original     		PDF 3N163 3N164 3N163. 3N164. 3N163 -10mA 200ns 3N163-64 3N164

    Untitled

    Abstract: No abstract text available
    Text: jre s ft 3N163 SERIES P-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY B O T T O M VIEW TO -7 2 TO-206AF PART NUM BER V (BR|DSS 3N163 -40 250 -50 3N164 -30 300 -50 "W 1 • d (A) 1 2 3 4 Performance Curves: MRA DRAIN G ATE SUBSTR ATE, C A S E SO URCE


    OCR Scan     		PDF 3N163 O-206AF) 3N164

    3N163

    Abstract: 3N164 3N170
    Text: D M üm 3N163, 3N164 P-Channel Enhancem ent Mode MOS FIET FEATURES • V ery High Input Impedance • High Gate Breakdown • Fast Switching • Low Capacitance PIN CONFIGURATION CHIP TOPOGRAPHY 1503- 2! MAXIMUM RATINGS @ 2 5 °C ambient unless noted} 3 N 163


    OCR Scan     		PDF 3N163, 3N164 3N163 3N164 1503-Z -10mA 3N170

    Untitled

    Abstract: No abstract text available
    Text: 3N163. 3N164. LINEAR SYSTEMS P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted)


    OCR Scan     		PDF 3N163. 3N164. 3N163 3N164 375mW 300ms.

    3N163-3N164

    Abstract: No abstract text available
    Text: 3N163. 3N164 LINEAR SYSTEMS P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage 3N163 3N164 Transient G-S Voltaae (NOTE 1) Drain Current Storage Temperature


    OCR Scan     		PDF 3N163. 3N164 3N163 3N164 375mW 200ns 300ms. 3N163-3N164

    3n164

    Abstract: No abstract text available
    Text: TY P ES 3N163, 3N164 P-C H A N N EL EN H A N C EM EN T-T YP E IN S U L A T E D -G A T E F IE L D -E F F E C T T R A N S IS T O R S B U L L E T I N N O . D L -S 7 2 1 1 7 5 0 , J U L Y 1 9 7 2 - R E V 1 S E D N O V E M B E R 1 9 7 2 ENHANCEMENT-TYPE"!" MOS SILIC O N TRAN SISTO RS


    OCR Scan     		PDF 3N163, 3N164

    3N163

    Abstract: 3N163-64 3N164
    Text: P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch 3N163/3N164 ABSOLUTE MAXIMUM RATINGS Note 1 (Ta = 25°C unless otherwise specified) FEATURES • • • • Very High Input Impedance High Gate Breakdown Fast Switching Low Capacitance Drain-Source or Drain-Gate Voltage


    OCR Scan     		PDF 3N163/3N164 to-72 3N163 3N164. 3N163. 3N164 -10mA 200ns 3N163 3N163-64 3N164

    Untitled

    Abstract: No abstract text available
    Text: 3N163. 3N164 LINEAR SYSTEMS P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted)


    OCR Scan     		PDF 3N163. 3N164 3N163 3N164 375mW 3N163) 3N164) 200ns 300ms.

    3N163

    Abstract: 3N164 3N165 3N166 3N169 3N172 3N173 3N188 3N189 3N190
    Text: » M © Ï F ©Ä¥Ä[L© LOW P O W E R FIELD E FFE C T T R A N S IS T O R S Typ« Number Case Style (TO - 3N163 3N164 3N172 3N173 72 72 72 72 Igss Max (PA) Min Geometry V(Br)da* Min (V) FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 10 10 200 200 2.0 2.0


    OCR Scan     		PDF 3N163 3N164 3N172 3N173 2000u 1500u 4000u 3N165 3N166 3N169 3N188 3N189 3N190

    Untitled

    Abstract: No abstract text available
    Text: Tem ic 3N163/3N164 S e m i c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min VGS(th) (V) r DS(on) Max (V) (Q) IiKon) Min (mA) C-rss Max (pF) toN Typ (ns) 3N163 -40 - 2 to -5 250 -5 0.7 18 3N164 -30 -2 to -5


    OCR Scan     		PDF 3N163/3N164 3N163 3N164 3N163/164 P-37404-- 04-Jul-94

    FMN1

    Abstract: No abstract text available
    Text: M M © ¥ © M M .© LOW POW ER FIELD EFFECT TRANSISTORS m m nnn Cam Styla T O - Geometry V(Br)da Min (V) 3N163 3N164 3N172 3N173 72 72 72 72 FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 3N190 3N191 99 99 99 99 99 99 Mas Max (nA) Max (ohms) 5.0 5.0 5.0 5.0


    OCR Scan     		PDF 3N163 3N164 3N172 3N173 2000u 1500u 4000u 4000u FMN1

    Untitled

    Abstract: No abstract text available
    Text: JU MRA1 DIE P-Channel Enhancement-Mode MOS Transistors in c o r p o r a te d MRA1CHP* 3N163 3N164 "Meets or exceeds specification for all part numbers listed below For additional design information please consult the typical performance curves MRA. DESIGNED FOR:


    OCR Scan     		PDF 3N163 3N164