3N80 RDS Search Results

3N80G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

3n80

Contextual Info: IXFA 3N80 IXFP 3N80 HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS = 800 V ID25 = 3.6 A RDS on = 3.6 W trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

utc 3n80l

Abstract: 3n80 3N80G 3N80L-TF1-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

"VDSS 800V" mosfet

Abstract: 3N80
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

3N80

Abstract: to-220 weight
Contextual Info: IXFA 3N80 IXFP 3N80 HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS = 800 V ID25 = 3.6 A RDS on = 3.6 W trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800

3n80

Abstract: 3n80 data sheet 400v 3a ultra fast recovery diode 3n80 rds
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N80 Preliminary Power MOSFET 2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

3N80

Abstract: utc 3n80l ULTRA FAST diode 400v 5a transistor 3N80 IGS TECHNOLOGIES MOSFET 400V TO-220 MOSFET 800V 3A 25V 1A power MOSFET TO-220 3n80 rds 400v 3a ultra fast recovery diode
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N80 Preliminary Power MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

P3N80

Abstract: 3N80 MTP3N75 mtp3n80 3N75 MOSFET 3N 200
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 3N75 M TM 3N80 M T P 3N 75 M T P 3N 80 Designer's Data Sheet Power Field Effect Transistor IM-Channel Enhancem ent-M ode Silicon G ate TM O S These TM O S P ow er FETs are designed fo r high vo ltag e , high speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g regu la to rs,

Contextual Info: 3VD329800YL 3VD329800YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD329800YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ 3 1 Advanced termination scheme to provide enhanced

3n80

Contextual Info: 3VD329800YL 3VD329800YL 高压MOSFET芯片 描述 ¾ 3VD329800YL为采用硅外延工艺制造的N沟道增强型 800V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； 3 1 ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；

CHINA TV FBT

Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
Contextual Info: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,