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    3N80 Search Results

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    3N80 Price and Stock

    STMicroelectronics STD3N80K5

    MOSFET N-CH 800V 2.5A DPAK
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    DigiKey STD3N80K5 Reel 5,000 2,500
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    Mouser Electronics STD3N80K5 2,484
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    Newark STD3N80K5 Cut Tape 6,879 1
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    STMicroelectronics STD3N80K5 2,484 1
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    STMicroelectronics STP3N80K5

    MOSFET N-CH 800V 2.5A TO220
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    DigiKey STP3N80K5 Tube 1,841 1
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    Mouser Electronics STP3N80K5 694
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    STMicroelectronics STF13N80K5

    MOSFET N-CH 800V 12A TO220FP
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    DigiKey STF13N80K5 Tube 1,655 1
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    Mouser Electronics STF13N80K5 1,155
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    Newark STF13N80K5 Bulk 4 1
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    STMicroelectronics STF13N80K5 1,155 1
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    Bristol Electronics STF13N80K5 90
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    STF13N80K5 20 2
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    Win Source Electronics STF13N80K5 30,700
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    STMicroelectronics STF3N80K5

    MOSFET N-CH 800V 2.5A TO220FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STF3N80K5 Tube 1,218 1
    • 1 $2.57
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    STMicroelectronics STF3N80K5 1
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    Avnet Silica STF3N80K5 15 Weeks 50
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    STMicroelectronics STP23N80K5

    MOSFET N-CH 800V 16A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STP23N80K5 Tube 1,105 1
    • 1 $6.26
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    Mouser Electronics STP23N80K5 975
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    STMicroelectronics STP23N80K5 975 1
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    Find more 3N80 price and stock on Findchips.com

    3N80 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3N80 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    3N80 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    3N80 Unknown Cross Reference Datasheet Scan PDF

    3N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3n80

    Abstract: No abstract text available
    Text: IXFA 3N80 IXFP 3N80 HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS = 800 V ID25 = 3.6 A RDS on = 3.6 W trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800


    Original     		PDF O-220 3n80

    3N80G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF 800Volts 3N80L-TA3-T 3N80G-TA3-T 3N80L-TF3-T 3N80G-TF3-T 3N80L-TF1-T 3N80G-TF1-T 3N80L-TF2-T 3N80G-at QW-R502-283 3N80G

    3n80

    Abstract: 3n80 data sheet 400v 3a ultra fast recovery diode 3n80 rds
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Preliminary Power MOSFET 2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		PDF 3N80L 3N80G 3N80-TA3-T 3N80-TF3-T QW-R502-283 3n80 3n80 data sheet 400v 3a ultra fast recovery diode 3n80 rds

    "VDSS 800V" mosfet

    Abstract: 3N80
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF 3N80L-TA3-T 3N80G-TA3-T 3N80L-TF3-T 3N80G-TF3-T 3N80L-TF1-T 3N80G-TF1-T O-220 O-220F O-22ues QW-R502-283 "VDSS 800V" mosfet 3N80

    3N80

    Abstract: utc 3n80l ULTRA FAST diode 400v 5a transistor 3N80 IGS TECHNOLOGIES MOSFET 400V TO-220 MOSFET 800V 3A 25V 1A power MOSFET TO-220 3n80 rds 400v 3a ultra fast recovery diode
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Preliminary Power MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		PDF 3N80L 3N80G 3N80-TA3-T 3N80-TF3-T QW-R502-283 3N80 utc 3n80l ULTRA FAST diode 400v 5a transistor 3N80 IGS TECHNOLOGIES MOSFET 400V TO-220 MOSFET 800V 3A 25V 1A power MOSFET TO-220 3n80 rds 400v 3a ultra fast recovery diode

    3N80

    Abstract: to-220 weight
    Text: IXFA 3N80 IXFP 3N80 HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS = 800 V ID25 = 3.6 A RDS on = 3.6 W trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800


    Original     		PDF O-220 3N80 to-220 weight

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF 3N80L-TA3-T 3N80G-TA3-T 3N80L-TF3-T 3N80G-TF3-T 3N80L-TF1-T 3N80G-TF1-T QW-R502-283

    utc 3n80l

    Abstract: 3n80 3N80G 3N80L-TF1-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF 800Volts 3N80L-TA3-T 3N80G-TA3-T 3N80L-TF3-T 3N80G-TF3-T 3N80L-TF1-T 3N80G-TF1-T 3N80L-TM3-T 3N80G-TM3-T 3N80L-TN3-T utc 3n80l 3n80 3N80G

    3n80

    Abstract: No abstract text available
    Text: 3VD329800YL 3VD329800YL 高压MOSFET芯片 描述 ¾ 3VD329800YL为采用硅外延工艺制造的N沟道增强型 800V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； 3 1 ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；


    Original     		PDF 3VD329800YL 3VD329800YL 3VD329800YLN 800VMOS O-220, X586m O-220 3n80

    CHINA TV FBT

    Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
    Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV


    Original     		PDF O-92M KRC102M KRC112M O-92L KTN2369, KTC3194 KTC3197, KTC3198 KTC945B KIA431 CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS

    1N80

    Abstract: utc 3n80l 3N80 mosfet 10a 800v mosfet 10a 800v high power
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N80 Power MOSFET 1A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum


    Original     		PDF O-220 O-220F O-220F1 O-252 QW-R502-491 1N80 utc 3n80l 3N80 mosfet 10a 800v mosfet 10a 800v high power

    3N80C

    Abstract: FQPF*3N80C DATE CODE FAIRCHILD
    Text: TM 3N80C/3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP3N80C/FQPF3N80C O-220 FQPF3N80C O-220F-3 FQPF3N80CYDTU 3N80C FQPF*3N80C DATE CODE FAIRCHILD

    Untitled

    Abstract: No abstract text available
    Text: 3VD329800YL 3VD329800YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD329800YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ 3 1 Advanced termination scheme to provide enhanced


    Original     		PDF 3VD329800YL 3VD329800YL O-220 24mmtion

    Untitled

    Abstract: No abstract text available
    Text: 3N80K5, 3N80K5, 3N80K5, 3N80K5 N-channel 800 V, 2.8 Ω typ., 2.5 A Zener-protected SuperMESH 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet − production data Features TAB Order codes 3 VDS RDS on max ID PTOT 1 3N80K5


    Original     		PDF STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5 O-220FP, O-220 STD3N80K5 STF3N80K5

    Untitled

    Abstract: No abstract text available
    Text: 3N80K5, 3N80K5, 3N80K5, 3N80K5 N-channel 800 V, 2.8 Ω typ., 2.5 A Zener-protected SuperMESH 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet − preliminary data Features TAB Order codes 3 VDS RDS on max ID PTOT 1 3N80K5


    Original     		PDF STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5 O-220FP, O-220 STD3N80K5 STF3N80K5

    P3N80

    Abstract: 3N80 MTP3N75 mtp3n80 3N75 MOSFET 3N 200
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 3N75 M TM 3N80 M T P 3N 75 M T P 3N 80 Designer's Data Sheet Power Field Effect Transistor IM-Channel Enhancem ent-M ode Silicon G ate TM O S These TM O S P ow er FETs are designed fo r high vo ltag e , high speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g regu la to rs,


    OCR Scan     		PDF MTM/MTP3N75, P3N80 3N80 MTP3N75 mtp3n80 3N75 MOSFET 3N 200

    2N80

    Abstract: 5P30
    Text: . DIP & SMD DELAY LINES o FlO TAPS •14PIN &IS PIN PACKAGES F DIPS SURFACE MOUNTING*G LEADS PASSIVE SERIES SERIES DIP-14 AND DIP-G14* J4 J3 12 11, 10 i * Surface M ount G Lead Package ,8 IM PEDANCE ± 1 0 % - - 1 2 3 4 5 6 7 _2 8 5 _ _


    OCR Scan     		PDF DIP-14 DIP-G14* 2N100 3KI33 3N100 5N100 2N80 5P30

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    3n80a

    Abstract: IXTP3N80 3n80 3N90 IXTM3N80 IXTM3N90 IXTP3N90 3N90R L015A
    Text: I X Y S CORP lflE D • 4bflb52b OOOQbOô 5 3N80, IXTP3N90, 3N80, IXTM3N90 “T • - \I 3 A M P S , 8 0 0 -9 0 0 V, 4.6Q/6.0S2 □IX Y S M A X IM U M R A T IN G S Sym. 3N80 3N80 IXTP3N90 IXTM3N90 Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MS3) (1)


    OCR Scan     		PDF 4bflb52b IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 IXTP3N80 IXTM3N80 IXTP3N90 IXTM3N90 O-220 3n80a 3n80 3N90 IXTM3N80 3N90R L015A

    2N25

    Abstract: 5n50 5n30 SMD 1N60 esc 5p20 5N35 3N25 5P30 5N80 3N45
    Text: E S C ELECTRONICS CORP SOE D • 3037257 OOODMÖLi T57 MECE □IP &SMD DELAY LINES SERIES D IP -14 IO TAPS •14 PIN & 16 PIN PACKAGES □IP Si SURFACE MOUNTINB *Q LEADS PASSIVE SERIES '% H i ¡7 T -H 7 - 13 AND DIP-G14* * Surface Mount G Lead Package IMPEDANCE ± 10%


    OCR Scan     		PDF DIP-14 DIP-G14 300atthe\ 100PCEN G1N25. 1N100 2N100 3N100 5N100 2N25 5n50 5n30 SMD 1N60 esc 5p20 5N35 3N25 5P30 5N80 3N45

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    3n80a

    Abstract: IXTM3N90
    Text: I X Y S CORP lflE D • 4bflb52b OOOQbOô 5 3N80, IXTP3N90, 3N80, IXTM3N90 □IXYS \I ”T ” MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MS3) (1) Gate-Source Voltage Continuous Voss Vdgr Vgs Vgsm Id Idm Po


    OCR Scan     		PDF 4bflb52b IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 IXTP3N80 IXTM3N80 IXTP3N90 IXTM3N90 ELECTRIC420 3n80a

    TFK 680 CNY 70

    Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
    Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.


    OCR Scan     		PDF