3VD324500YL Search Results
3VD324500YL Datasheets Context Search
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Contextual Info: 3VD324500YL 3VD324500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD324500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in ¾ 3 1 advanced silicon epitaxial planar technology; Advanced termination scheme to provide enhanced |
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3VD324500YL 3VD324500YL O-220 | |
500VMOSContextual Info: 3VD324500YL 3VD324500YL 高压MOSFET芯片 描述 ¾ 3VD324500YL为采用硅外延工艺制造的N沟道增 强型500V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快； |
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3VD324500YL 3VD324500YL 3VD324500YLN 500VMOS O-220 500VVGS 10VID 20VVDS 500VMOS | |
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Contextual Info: 3VD324500YL 3VD324500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD324500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified; |
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3VD324500YL 3VD324500YL O-220 3780m 2780m | |
3780mContextual Info: 3VD324500YL 3VD324500YL 高压MOSFET芯片 描述 Ø 3VD324500YL为采用硅外延工艺制造的N沟道增 强型500V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快； |
Original |
3VD324500YL 3VD324500YL 3VD324500YLN 500VMOS O-220 3780m 2780m 500VVGS 3780m |