400FIA Search Results
400FIA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: H I T A C H I / L O G I C / A R R A Y S / N E f l E O E D • 4 4 ^ 2 0 3 0 0 l 4 7 b S HN27C301P/FP Series- T -W -13- I S 131072-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C301P Series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the |
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HN27C301P/FP 131072-word HN27C301P | |
methanol
Abstract: OPTEK slotted OPB830L OPB832L OPB842L QPS830L kt840
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OPB830 OPB830L, OPB84Ã methanol OPTEK slotted OPB830L OPB832L OPB842L QPS830L kt840 | |
Microchip vk 1103Contextual Info: fiW l e « « . 27LV128 M Ie r o o h Ip 128K 16K X 8 Low Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage rang« 3.0V to 5.5V • High speed performance — 200ns Maximum access time at 3.0V • CMOS Technology for low power consumption — 8mA active current at 3.0V |
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27LV128 200ns 100fiA 28-pin 32-pin DS11025A-8 Microchip vk 1103 | |
Contextual Info: W D EDI5M32128C I ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128Kx32 CMOS ] l fl[ EEPROM Module Features The EDI5M32128C is a high speed, high perform ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8 |
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EDI5M32128C 128Kx32 EDI5M32128C 128Kx8 1b-10 020x45Â | |
UAA 1008Contextual Info: CRTRLYST s e H i c o N o u c T o n 2231 CALLE DE LUNA SANTA CLARA, CA 9S0S4 Ttbphon»: 408 748-7700 Fax: (408) 980-8209 CAT28F512V5 512K (64K x 8) CMOS FLASH MEMORY DESCRIPTION FEATURES The CAT28F512V5 Rash memory is a high speed 64K x 8-bit electrically erasable and reprogram |
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CAT28F512V5 CAT28F512V5 UAA 1008 | |
7480N
Abstract: FJH191 FJH191A H191A
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7480N FJH191 7480N. O-116 14-lead FJH191A H191A | |
7402N
Abstract: 2 input nor gate 24v FJH221 nor gate 24v 7402N Nor 7402N TTL FJH221A
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FIH22I FJH22IA 7402N FJH221 7402N. O-116 14-lead FJH221A 7402N 2 input nor gate 24v nor gate 24v 7402N Nor 7402N TTL | |
7400N
Abstract: 7401N 7402N 7403AN 7403N 7404N 7405AN 7405N 7420N 7440N
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7400N 7401N 7402N 7403N 7403AN 7404N 7405N 7405AN 7420N 7430N 7440N | |
Contextual Info: IBM0165805B IBM0165805P ADVANCED 8M x 8 12/11 E D O D R A M Features • 8,388,608 word by 8 bit organization Read-Modity-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time |
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IBM0165805B IBM0165805P 104ns 256ms 400fiA) 414mW SA14-4241 | |
7170Contextual Info: ICM7170 jaP-Compatible Real-Time Clock GENERAL DESCRIPTION FEATURES The ICM7170 real time clock is a microprocessor bus compatible peripheral, fabricated using Harris’ silicon gate CMOS LSI process. An 8 -bit bidirectional bus is used for the data I/O circuitry. The clock is set or read by accessing the |
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ICM7170 ICM7170 1N914-type 7170 | |
Contextual Info: DS3862 National Semiconductor DS3862 Octal High Speed Trapezoidal Bus Transceiver G eneral Description Features The DS3862 is an octal high speed schottky bus transceiver intended for use with terminated 120il impedance lines. It is specifically designed to reduce noise in unbalanced trans |
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DS3862 DS3862 120il TL/F/8539-4 TL/F/8539-5 TL/F/8539-7 | |
2BC64Contextual Info: 28C64A & DICE FORM M ic r o c h ip 64K 8K x 8 CMOS Electrically Erasable PROM D IE C O N F IG U R A TIO N FEATURES Die Size: 134 x 206 sq. mils n (O w Tf n Q § Q O 9 | • 250ns Access Time • CMOS Technology for Low Power Dissipation cm T- o — 30m A Active |
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28C64A 250ns DS11135A-6 2BC64 | |
ML4041CQ
Abstract: ML4042 BVP-2
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ML4041, ML4042 ML4042 ML4041CQ BVP-2 | |
SCN2681
Abstract: SCN2681T SCN2681TC1A44 SCN2681TC1N40
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SCN2681T 711002b SCN2681 SCN2681T SCN2681. OT187-2 112E10 MO-047AC 1995May SCN2681TC1A44 SCN2681TC1N40 | |
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55T500
Abstract: IMP55T500 wd preamp
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IMP55T500/502 00021fl0 S5-121MC 55T500 IMP55T500 wd preamp | |
GQCC1-J68
Abstract: 87c451 80C51 83C451 87C51 AVR* "add immediate" TLO 81
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87C451 80C51 68-Pin 128x8 16-bit 12MHz 87C451 Mav22 GQCC1-J68 83C451 87C51 AVR* "add immediate" TLO 81 | |
D0035Contextual Info: XL93LC46B 1,024-Bit Serial Electrically Erasable PROM 1.8V to 5 .5 V Operation FEATURES • 1,8V to 5.5V Operation • Extended Temperature Range: -40°C to +85 C • User Selectable Word Length • State-of-the-Art Architecture PIN CONFIGURATIONS Plastic Dual-in-line |
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XL93LC46B 024-Bit D0035 --------------------D0035 | |
Contextual Info: DPE6434 64K X 32 CMOS EEPROM MODULE DESCRIPTION: The DPE6434 is a high-performance Electrically Erasable and Programmable Read O nly M emory EEPRO M module and may be organized as 64K X 32, 128K X 16 or 256K X 8. The module is built with eight low-power C M O S 32K X 8 |
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DPE6434 DPE6434 PE6434 16-bit 32-bit E6434 64-BW 500mV | |
KM23C2001
Abstract: mask rom mask rom 2m 23C2001
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KM23C2001 150ns 32-pin, 144x8 KM23C200KG) KM23C2001G) mask rom mask rom 2m 23C2001 | |
M29W8000Contextual Info: Preliminary KM29W8000T, KM29W8000IT FLASH MEMORY Document Title 1M X 8 bit NAND Flash Memory Revision History Revision NPr History 0.0 1.0 Data Sheet 1997 Data Sheet 1998 1. Changed tBERS param eter: 5ms Typ. -> 2ms(Typ.) 10ms(Max.) -> 4ms(Max.) 2. Changed tPRO G param eter: 1,5ms(Max.) -> 1 Oms(Max) |
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KM29W8000T, KM29W8000IT M29W8000 | |
KM23C512Contextual Info: KM23C512 G CMOS MASK ROM 512K-Bit (64Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C512: 28 pln DIP (Polarity programmable chip enable pin and output enable pin) • KM23C512G: 32-pln SOP (Polarity programmable chip enable pin and output enable pin) |
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KM23C512 512K-Bit 64Kx8) KM23C512: KM23C512G: 32-pln 120ns 100pA | |
F-91300
Abstract: 9010 eprom f91300
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27LV128 200ns 100fiA 28-pin 32-pin DS11025A-8 F-91300 9010 eprom f91300 | |
receiver philips fr 310
Abstract: RIA 250
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SCN26562 SCN26562 N26562 N26562C receiver philips fr 310 RIA 250 | |
T74LS139B1Contextual Info: S G S-THOHSON 07E D I v ie 'id d v u ujihU 7j y LOW POWER SCHOTTKY INTEGRATED CIRCUITS - 67C 16200 T -6 6 -2 1 -5 5 DUAL 1-0F-4 DECODER DESCRIPTION The T54LS139/T74LS 139 is a high speed Dual 1-of-4 Decoder/Demultiplexer. This device has two |
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T54LS139/T74LS LS139 T74LS139B1 |