414MW Search Results

MSM51V18160F

Abstract: SOJ42-P-400-1
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

Contextual Info: IBM0165805B IBM0165805P ADVANCED 8M x 8 12/11 E D O D R A M Features • 8,388,608 word by 8 bit organization Read-Modity-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time

Contextual Info: GM71V64803C GM71VS64803CL LG Semicon Co.,Ltd. 8,388,608 WORDS x 8 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 64803C/CL is the new generation dynamic RAM organized 8,388,608 words by 8bits. The GM71V(S)64803C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as

MSM51V18165

Contextual Info: J2G0133-17-61 作成：1998年 3月 ¡ 電子デバイス MSM51V18165D/DSL l MSM51V18165D/DSL 暫定 1,048,576-Wordx16-Bit DYNAMIC RAM：EDO機能付き高速ページモード n 概要 MSM51V18165D/DSLはCMOSプロセス技術を用いた1,048,576ワ−ド×16ビット構成のダイナミックラ

IBM0165405B16M

Abstract: IBM0165405BJ3C-50 IBM0165405BJ3C-60 IBM0165405P16M TSOP-32
Contextual Info: IBM0165405B16M x 412/12, 3.3V, EDO. IBM0165405P16M x 412/12, 3.3V, LP, SR, EDO. IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM ADVANCED Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance:

SOP-54

Abstract: SOP54 F0600 F06-00
Contextual Info: HYUNDAI HY51V64160 Series 4M X 16-bit CMOS ORAM with 2 CAS ADVANCED INFORMATION DESCRIPTION The HY51V64160 is the new generation and fast dynamic RAM organized 4,194,304 x 16-bit. The HY51V64160 utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: ««YUHDAI > ♦ HY51 V64800,H Y51V65800 8Mx8, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 8,388,608 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow

MSM51V18165F

Abstract: SOJ42-P-400-1
Contextual Info: FEDD51V18165F-01 1Semiconductor MSM51V18165F This version: August. 2000 Previous version :  1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V18165F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate

MSM51V18160F

Abstract: MSM51V18165F SOJ42-P-400-1
Contextual Info: Semiconductor This version:Oct.1999 MSM51V18160F 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160F is a 1,048,576-word ´ 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V18160F achieves high integration, high-speed operation, and low-power consumption

Contextual Info: •HYUNDAI HY51V64800, HY51V65800 8Mx8, Fast Page mode 1st Generation DESCRIPTION This fam ily is a 64M bit dynam ic RAM organized 8,388,608 x 8-bit configuration w ith Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access mem ory w ithin the same row. The circuit and process design allow

0165165PT3C-60

Contextual Info: IBM0165165B IBM0165165P ADVANCED 4M X 16 1 2 / 1 0 E D O D R A M Features • 4,194,304 word by 16 bit organization Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/retention Time

Contextual Info: HM51W16165 Series HM51W18165 Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-650A Z Rev 1.0 Sep. 30, 1996 Description The Hitachi HM51W16165 Series and HM51W18165 Series are CMOS dynamic RAMs organized as 1,048,576-word X 16-bit. They employ the most advanced CMOS technology for high performance and

Contextual Info: GM71V64803C GM71VS64803CL 8,388,608 WORDS x 8 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 64803C/CL is the new generation dynamic RAM organized 8,388,608 words by 8bits. The GM71V(S)64803C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as

KAD5512P

Contextual Info: KAD5510P-50 Data Sheet October 8, 2009 FN6811.2 10-Bit, 500MSPS A/D Converter Features The KAD5510P-50 is a low-power, high-performance, 10-bit, 500MSPS analog-to-digital converter designed with Intersil’s proprietary FemtoCharge technology on a standard

Contextual Info: J2G0131-17-61 作成：1998年 3月 ¡ 電子デバイス MSM51V18160D/DSL l MSM51V18160D/DSL 暫定 1,048,576-Wordx16-Bit DYNAMIC RAM：高速ページモード n 概要 MSM51V18160D/DSLはCMOSプロセス技術を用いた1,048,576ワ−ド×16ビット構成のダイナミックラ

Contextual Info: HY51V64800,HY51V65800 8Mx8, Fast Page mode 1st Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 8,388,608 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow

Contextual Info: HY51V64400 Series •HYUNDAI 16Mx 4-bit CMOS DRAM ADVANCED INFORMATION DESCRIPTION The HY51V64400 is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V64400 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

marking d3p

Abstract: KAD5512P 500MSPS KAD5510P-50 KAD5512P-50 KAD5514P-12 KAD5514P-17 KAD5514P-21 KAD5514P-25 tdc 310
Contextual Info: KAD5510P-50 Data Sheet January 30, 2009 FN6811.1 10-Bit, 500MSPS A/D Converter Features The KAD5510P-50 is a low-power, high-performance, 10-bit, 500MSPS analog-to-digital converter designed with Intersil’s proprietary FemtoCharge technology on a standard

marking D3N

Abstract: 500MSPS KAD5510P-50 KAD5512P-50 KAD5514P-12 KAD5514P-17 KAD5514P-21 KAD5514P-25 KAD5512P
Contextual Info: KAD5510P-50 Data Sheet October 8, 2009 FN6811.2 10-Bit, 500MSPS A/D Converter Features The KAD5510P-50 is a low-power, high-performance, 10-bit, 500MSPS analog-to-digital converter designed with Intersil’s proprietary FemtoCharge technology on a standard

jedec ms-024

Abstract: IBM0165805B8M IBM0165805BJ3C-50 IBM0165805BJ3C-60 IBM0165805P8M TSOP-32
Contextual Info: IBM0165805B8M x 812/11, 3.3V, EDO. IBM0165805P8M x 812/11, 3.3V, LP, SR, EDO. IBM0165805B IBM0165805P 8M x 8 12/11 EDO DRAM ADVANCED Features • 8,388,608 word by 8 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance:

MSM51V18160F

Abstract: SOJ42-P-400-1
Contextual Info: FEDD51V18160F-02 1Semiconductor MSM51V18160F This version: January. 2001 Previous version : Oct. 2000 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate

MSM51V18160F

Abstract: SOJ42-P-400-1
Contextual Info: FEDD51V18160F-01 1Semiconductor MSM51V18160F This version: June. 2000 Previous version :  1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate

Contextual Info: IBM0165405B IBM0165405P ADVANCED 16M x 4 12/12 E D O D R A M Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance: ; • Extended Data Out Hyper Page Mode • CAS before RAS Refresh

Contextual Info: TO SH IB A THLY644031 FG-10,-12 T E N T A T IV E T O S H IB A H Y B R ID D IG IT A L IN T E G R A T E D C IR C U IT 4,194,304 WORDS x 64 BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY644031FG is a 4,194,304 words by 64 bits Synchronous DRAM module which assembled 4