400MII Search Results

Contextual Info: KMM364E1600AK/AS KMM364E1680AK/AS DRAM MODULE KMM364E1600AK/AS & KMM364E1680AK/AS Fast Page with EDO Mode 16Mx64 DRAM DIMM based on 16Mx4, 4K & 8K Refresh, 5V FEATURES GENERAL DESCR IPTIO N CMOS 16Mx4bit DRAMs in SOJ/TSOP-II 400mii • Part Identification

conventional bicmos

Contextual Info: 3ÔE D B 4Ô2S771 QQOÔ'iSa 3 Ö I D T _ - P - % - 2 3 - 6 3 INTEGRATED DEVICE HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10A474 IDT100A474 IDT101A474 FEATURES: DESCRIPTION: • 1024-words x 4-bit organization

39S256160T

Abstract: TSOP54-2 APA10 39S256160T-8 39S256400T-8
Contextual Info: H YB39S25640x/80x/16xT 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Target Information Rev. 0.6 • High Performance: Multiple Burst Operation -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns Automatic Command and Read with Single Controlled

Contextual Info: IBM0316409C IBM0316809C IBM0316169C IBM03164B9C Prelim inary 16M b S y n c h r o n o u s D R A M -D ie Revision E Features • M ultiple Burst Read w ith Single W rite O ption • High Perform ance: CL=3 : CL=2 / 3 ; CL=3 i: c. 3 • Units ; • A utom atic and C ontrolled Precharge C om m and

Contextual Info: integ rated Device Technology, Inc. PRELIMINARY IDT10496LL IDT100496LL IDT101496LL SELF-TIMED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT STRAM FEATURES: • 16,384-words x 4-bit organization • Self-Timed Write, with latches on inputs and latches on outputs

SEM t11

Abstract: 39S16800 39S16800AT-8 Q1323 q1333
Contextual Info: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command

Contextual Info: 1^ 1 W NEC Electronics Inc. pPD424260A/L, 42S4260A/L 262,144 X 16-Bit Dynamic CMOS RAM Preliminary Information Description The /L/PD424260A/L and /JPD42S4260A/L are fast-page dynamic RAMs organized as 262,144 words by 16 bits and designed to operate from a single power supply:

Contextual Info: KMM466F104AT-L KMM466F124AT-L DRAM MODULE KMM466F104AT-L & KMM466F124AT-L EDO Mode without buffer 1Mx64 based on 1Mx16, 1K & 4K Refresh, 3.3V, Low Power/Self-Refresh GEN ER AL DESC RIPTIO N FEATURES The Samsung KMM466F10 2 4AT-L is a 1M bit x 64 Dynamic RAM high density memory module. The

100A484

Abstract: 101A48 IDT10484 ECL-10K IDT100A4M 4Kx4 SRAM
Contextual Info: r — I N T E G R A T E D DE VICE 3ÔE D • 4 Ô 2 S771 D Ü 0 b071 4 DÉ IDT 3 > '0 < Z HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4K x 4-BIT SRAM PRELIMINARY IDT10A484 IDT100A434 IDT101A484 FEATURES; DESCRIPTION: • • ■ • • • • • The IDT10A484,1DT100A484 and IDT101A484 are 16,384bit high-speed BiCEMOS ECL static random access

Contextual Info: MITSUBISHI LSts M 5 M 4 4 1 7 0 A J ,L ,T P ,R T - 6 ,- 7 ,- 8 ,- 1 0 JM 1 o m 2 FA S T PA G E MODE 4 1 9 4 3 0 4 -B IT 2 6 2 1 4 4 -W O R D B Y 16-BIT DYN AM IC RAM '9 0 D E S C R IP T IO N - 12-0 8 PIN C O N FIG U R A T IO N (TOP V IEW } This is a family of 2 6 2 1 4 4 -w o rd by 16-bit dynamic RAM s.

168-PIN

Abstract: DTM60085 Dataram
Contextual Info: DTM60085 64MB-8M x 72, 168-Pin Unbuffered PC100 SDRAM DIMM Identification Part number: DTM60085 Performance range 1 0 0 M H z 1 0 n s @ C L =2 Features Description Burst mode operation The Dataram DTM60085 Assembly is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The

DTM60108

Contextual Info: DTM60108 128MB-16M x 64, 168-Pin Unbuffered PC100 SDRAM DIMM Identification Part number:DTM60108 Performance range 1 0 0 M H z 1 0 n s @ C L = 2 Features Description Burst mode operation The Dataram DTM60108 Assembly is a 16M bit x 64 Synchronous Dynamic RAM high density memory module.

DTM60129

Abstract: 32M X 8 ram
Contextual Info: DTM60129 256MB-32M x 72, 168-Pin Unbuffered PC100 SDRAM DIMM Identification Part number: DTM60129 Performance range 1 0 0 M H z 1 0 n s @ C L =3 Features Description Burst mode operation The Dataram DTM60129 Assembly is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The

Dataram

Abstract: ram 168 pin DTM60107
Contextual Info: DTM60107 64MB-8M x 64, 168-Pin Unbuffered PC100 SDRAM DIMM Identification Part Number:DTM60107 Performance range 1 0 0 M H z 1 0 n s @ C L =2 Features Description Burst mode operation The Dataram DTM60107 Assembly is a 8M bit x 64 Synchronous Dynamic RAM high density memory module.

Contextual Info: KM681002 CMOS SRAM 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM681002 -15: 170mA (Max.) KM681002-17: 160mA (Max.)

Contextual Info: DRAM MODULE KMM364E160 8 0BK/BS KMM364E160(8)0BK/BS EDO Mode 16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364E160(8)0B is a 16Mx64bits Dynamic RAM high density memory module. The Samsung KMM364E160(8)0B consists of sixteen CMOS 16Mx4bits

KMM466S203BT-F0

Abstract: KMM466S203BT-F2
Contextual Info: KMM466S203BT NEW JEDEC SDRAM MODULE KMM466S203BT S D R A M SODIMM 2Mx64 SDRAM SODIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S203BT is a 2M bitx 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM374S1603BTL PC66 SDRAM MODULE KMM374S1603BTL SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1603BTL is a 16M bit x 72 Synchro­ • Performance range

Contextual Info: KM68BV4002 BiCMOS SRAM 512K x 8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES G E N E R A L D E S C R IP T IO N • Fast Access Time 12,13,15ns{Max.) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM68BV4002 - 1 2 : 170mA(Max.)

1D03NS

Contextual Info: Y U H □ A I - • H Y 57 V 1 6 16 1 0 C 2 Banks X 512K x 16 Bit Synchronous ORAM DESCRIPTION THE Hyundai HY57V161610C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth, HY57V161610C is organized as 2banks of

Contextual Info: IB M 0 1 1 6 1 6 5 IB M 0 1 1 6 1 6 5 M IB M 0 1 1 6 1 6 5 B IB M 0 1 1 6 1 6 5 P 1M x 16 12/8 EDO DRAM Features • • 1 ,0 4 8 ,5 7 6 w ord by 16 bit organization • S ingle 3 .3 V ± 0 .3 V or 5 .0 V ± 0 .5 V pow er supply • S tan dard P o w e r S P and Low P ow er (LP)

Contextual Info: revision-P04. '98.12.16 M it s u b is h i l s is M5M5V416BTP, RT PRELIMINARY Notice: This is not a final specification. Som e parametric limits are subject to change 4194304-BIT 262144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION FEATURES The M5M5V416B is a fa m ily of low voltage 4-M bit static RAMs

Contextual Info: MITSUBISHI LSIs M 5 M 4 V 4 1 0 0 J ,L ,T P ,R T - 6 ,- 7 ,- 8 , - 6 S ,- 7 S ,- 8 S FAST PAGE MODE 4194304-BIT 4194304-WORD BY 1-BIT DYNAMIC RAM ? ^ D ESCRIPTIO N This is a family of 4 1 9 4 3 0 4 - word by 1 -b it dynamic RAMS, PIN CO NFIGU RATIO N (TO P VIEW )

M5M4V18160

Contextual Info: MITSUBISHI LSIs M 5 M 4 V 1 8 1 6 0 C T P - 5 ,- 6 ,- 7 , -5S,-6S,-7S iS'c5<"S’ bl«1 FAST PAGE MODE 16777216-BIT 1048576-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 1048576-word by 16-bit dynamic RAM S, fabricated with the high performance C M OS process, and is ideal