400V Search Results

SM16D14

Abstract: TOSHIBA THYRISTOR
Contextual Info: SM16 D,G 14 BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC P OWER C O N T R O L A P P LICATIONS. Unit in mm 3 á hr (ZiatxOMAX. FEATURES: . R e p e t i t i v e P e a k O f f - S t a t e V o l t a g e : V[)RM= 2 0 0 — 400V . R .M.S O n - S t a t e C u r rent

sf3d42c

Abstract: SF3G42C
Contextual Info: THYRISTOR SILICON PLANAR TYPE SF3 D,G 42C LOW POWER CONTROL APPLICATIONS. Unit in mm 1 0.0 1 0.5 Repetitive Peak Off-State Voltage: Vr)RM=200~400V DRM“ Repetitive Peak Reverse Voltage ^RRM =10V r (S3.2±0.1 •ix" • Plastic Mold Package • Peak On-State Voltage

S6370

Contextual Info: S6370 THYRISTOR SILICON DIFFUSED JUNCTION Unit in mm LOW POWER SWITCHING APPLICATIONS STROBO TRIGGER 0 5 . 1 MAX. • Repetitive Peak Off-State Voltage VDRM=400V • Repetitive Peak Reverse Voltage Vr r m =4° o v • Fast Turn On Time tgt= l .5 jjs I 1

100L2CZ

Abstract: 10GL2CZ 100L2C 10FL2CZ 10dl2cz
Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 10(D,F,G)L2CZ47A SWITCHING TYPE POWER SUPPLY APPLICATION. Unit in mm CONVERTER & CHOPPER APPLICATION. 10.3 MAX 03.2±O .2 • Repetitive Peak Reverse Voltage : V^^=200, 300, 400V • Average Output Recified Current : Io=10A

GE C20C

Abstract: SM16G1 SM16G16 ge737
Contextual Info: BI-DIRECTIONAL TRIODE THYRISTOR SM16 D,G 16 SILICON PLANAR TYPE Unit AC POWER CONTROL APPLICATIONS. in mm p 1 & 8 M AX , FE ATU R E S : . Repetitive Peak Off-State Voltage : Vqrji=200 — 400V . R.M.S O n - S t a t e C u r r e n t : It (RMS)= 16A . Su i t a b l e

f0r3g

Abstract: SF0R3 "F0R3G" thyristor F0R3G
Contextual Info: T O SH IB A SF0R3G42 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF0R3G42 Unit in mm LOW POWER SWITCHING AND CONTROL APPLICATIONS. • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Plastic Mold Type. • • VDRM -, =400V

Contextual Info: SILICON DIFFUSED JUNCTION TYPE RECTIFIER STACK TELCOMMUNICATION APPLICATIONS. . Repetitive Peak Reverse Voltage : V r r h =400V . Average Forward Current : Io=0.5A Ta=47°C . Dual in Line Type. . Plastic Mold Package. . Low Loss Type. POLARITY + o H o o

5fl2cz

Abstract: 5DL2CZ
Contextual Info: SILICON EPITAXIAL TYPE p ß L2CZ47A HIGHefficiency PIQDEstack hed) SWITCHING TYPE POWER SUPPLY APPLICATION. Unit in mm CONVERITE & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage 0 3 .2± o.2 10.3 M AX : V^jyvj=200, 300, 400V • Average Output Rectified Current : Iq =5A

2SC2535

Abstract: 400V to 6V DC Regulator
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC2535 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED HIGH VOLTAGE SW IT C H IN G APPLICATIONS. SW ITCHIN G REGULATOR APPLICATIONS. JO 3 MAX HIGH SPEED D C-DC CONVERTER APPLICATIONS. • Excellent Switching Time • High Collector Breakdown Voltage V C E O = 400V

Contextual Info: 1R5BZ41J R5GZ41 T O SH IB A TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1R5BZ41, 1R5GZ41 Unit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS. • • • Average Forward Current : Ip AV = 1-5A Repetitive Peak Reverse Voltage : V r r m = 100, 400V Peak One Cycle Surge Forward Current (Non Repetitive)

transistor G11

Abstract: to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor
Contextual Info: TS13003 High Voltage NPN Transistor TO-92 TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 1V @ IC =0.5A, IB =0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

TRANSISTOR 0835

Contextual Info: TSC966 NPN Silicon Planar High Voltage Transistor TO-92 Pin Definition: SOT-223 1. Emitter 2. Collector 3. Base Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 600V BVCEO 400V IC 300mA VCE SAT Features ● ● Ordering Information High BVceo, BVcbo

NPN Transistor 1A 800V to - 92

Abstract: transistor -25 F07
Contextual Info: TS13003MV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 800V IC 1.5A VCE SAT Features ● High Voltage ● High Speed Switching 0.8V @ IC / IB = 1A / 0.25A Block Diagram Structure ● Silicon Triple Diffused Type

M16GZ47

Abstract: m16jz47
Contextual Info: SM16GZ47, SM16JZ47, SM16GZ47A, SM16JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16GZ47, SM16JZ47, SM16GZ47A, SM16JZ47A AC POWER CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off−State Voltage: VDRM = 400V, 600V z R.M.S On−State Current: IT RMS = 16A

m3gz47

Abstract: M3JZ47
Contextual Info: SM3GZ47, SM3JZ47 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3GZ47, SM3JZ47 AC POWER CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off−State Voltage: VDRM = 400V, 600V z R.M.S On−State Current: IT RMS = 3A z High Commutating (dv / dt)

Contextual Info: SF3GZ47,SF3JZ47 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF3GZ47, SF3JZ47 MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 3A

tsc13003

Abstract: TSC13003H NPN Transistor 1A 800V to - 92 transistor 800V 1A TSC1300 NPN Transistor 1A 400V to - 92 TSC13 1.5A NPN power transistor TO-92
Contextual Info: TSC13003H Preliminary High Voltage NPN Transistor TO-92 TO-126 Pin Definition: 1. Emitter 2. Collector 3. Base Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 800V IC 1.5A VCE SAT Features 0.8V @ IC / IB = 0.5A / 0.1A Block Diagram

TSC5304EDCP

Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

Contextual Info: U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER and CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 400V z Average Output Rectified Current : IO = 20A z Ultra Fast Reverse−Recovery Time

M8GZ47

Abstract: M8JZ47
Contextual Info: SM8GZ47, SM8JZ47, SM8GZ47A, SM8JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8GZ47, SM8JZ47, SM8GZ47A, SM8JZ47A AC POWER CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off−State Voltage: VDRM = 400V, 600V z R.M.S On−State Current: IT RMS = 8A

thyristor handbook

Contextual Info: S6744 TOSHIBA THYRISTOR SILICON PLANAR TYPE S6744 MEDIUM POWER CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off−State Voltage : VDRM = 400V Repetitive Peak Reverse Voltage : VRRM = 400V z Average On−State Current : IT AV = 8A z Large Current Pulse Capability

Contextual Info: 1GU42 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1GU42 Unit: mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY z Average Forward Current : IF (AV) = 1.0A z Repetitive Peak Reverse Voltage : VRRM = 400V z Reverse Recovery Time : trr = 100ns (Max) z Plastic Mold Type.

BD307

Abstract: BU306 9v dc motor BU306F BU307F transistor 400v BD306 300V transistor npn 2a NPN Transistor 1A 400V transistor b 40 Ic-5A datasheet
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min)- BD306F 400V(Min)- BD307F ·Collector Current-8A APPLICATIONS ·Designed for use in switching regulators, inverters, motor

vbe 10v, vce 500v NPN Transistor

Abstract: 2SC2415 NPN Transistor 1A 400V power transistor 3A vce 500v NPN Transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2415 DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min) APPLICATIONS ·Designed for high speed power switching applications.