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    BU307F Search Results

    BU307F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    BU307F
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 114.45KB 1
    BU307F
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 39.52KB 1
    BU307F
    Philips Semiconductors Silicon Diffused Power Transistors Scan PDF 147.18KB 6

    BU307F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: DEVELOPMENT DATA This data sheet contains advance Information and specifications are subject to change without notice. • bbS3Ci3;L DDlaSb3r ^ ■ BU306F BU307F J N AflER P H I L I P S / ] I S CRETE 2SE D T -5 3 '^ 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically


    OCR Scan
    BU306F BU307F OT186 BU306F T-33-09 PDF

    Contextual Info: BU307F Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)700 V(BR)CBO (V) I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    BU307F PDF

    M-988

    Abstract: BU306F 307F BU307F BU306
    Contextual Info: bbSB'JBl GG1.ÖSL1 1 DEVELOPMENT DATA BU306F BU307F This data sheet contains advance Information and specifications are subject to change without notice. N AMER PHILIPS / D I S CR E T E 2SE D T-33'Ö? SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically


    OCR Scan
    bfaS3131 BU306F BU307F OT186 T-33-09 7Z9467? M-988 307F BU307F BU306 PDF

    up 3080 lg

    Abstract: PS 307 5A B1056 PS 307 2A 307F BU306F BU307F lg-5a ic 7294
    Contextual Info: 11 GOlöSbl 1 DEVELOPM ENT DATA BU306F BU307F This data sheet contains advance Information and specifications are subject to change without notice. N AMER PH IL IPS /DISCRETE 2SE D T-33-Ö? SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically


    OCR Scan
    BU306F BU307F OT186 bS3eL31 T-33-09 up 3080 lg PS 307 5A B1056 PS 307 2A 307F BU307F lg-5a ic 7294 PDF

    BD307

    Abstract: BU306 9v dc motor BU306F BU307F transistor 400v BD306 300V transistor npn 2a NPN Transistor 1A 400V transistor b 40 Ic-5A datasheet
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min)- BD306F 400V(Min)- BD307F ·Collector Current-8A APPLICATIONS ·Designed for use in switching regulators, inverters, motor


    Original
    BU306F/307F BD306F BD307F BU306F BU307F BD307 BU306 9v dc motor BU306F BU307F transistor 400v BD306 300V transistor npn 2a NPN Transistor 1A 400V transistor b 40 Ic-5A datasheet PDF