400V 12V Search Results

Contextual Info: rr\rm _ TECHNOLOGY F6OTURCS LT1208/LT1209 Dual and Q uad 45MHz, 400V/|is O p Am ps D CSCRIPTIOn • 45MHz Gain-Bandwidth ■ 400V/ns Slew Rate ■ Unity-Gain Stable ■ 7V/mV DC Gain, RL = 500Q ■ 3mV Maximum Input Offset Voltage ■ +12V Minimum Output Swing into 500i2

Contextual Info: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQPF4N50C

Abstract: FQP11N40C FQP3N50C FQPF11N40C FQPF3N50C FQP4N50C
Contextual Info: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 : @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

MOSFET 400V TO-220

Abstract: FQP11N40C fqpf11n40c N-Channel mosfet driver 400v to220 MOSFET 400V FQP3N50C FQPF3N50C N-Channel mosfet 400v to220
Contextual Info: FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

MOSFET 400V

Abstract: MOSFET 400V TO-220 p channel mosfet 100v n-Channel mosfet 400v FQP11N40C FQP3N50C FQPF11N40C FQPF3N50C
Contextual Info: FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

IRFD310

Abstract: TB334
Contextual Info: IRFD310 Data Sheet January 2002 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

TOT - 4301

Abstract: LA 4303 IRFD320 TA17404 TB334
Contextual Info: IRFD320 Data Sheet July 1999 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 0.5A, 400V • rDS ON = 1.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

IRF340

Abstract: TA17424 to204ae TB334
Contextual Info: IRF340 Data Sheet March 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 10A, 400V • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance

IRFF310

Abstract: TB334
Contextual Info: IRFF310 Data Sheet March 1999 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 1.35A, 400V • rDS ON = 3.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

IRFF320

Abstract: TA17404 TB334
Contextual Info: IRFF320 Data Sheet January 2002 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 2.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFP350

Abstract: TB334
Contextual Info: IRFP350 Data Sheet January 2002 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

SCR0840

Abstract: scr 0840 VAK marking
Contextual Info: SCR0840 Sensitive Gate SCRs 400V, 0.8A Sensitive Gate SCRs Features y Repetitive Peak Off-State Voltage : 400V y R.M.S On-State Current : IT RMS =0.8A y Low On-state Voltage : VTM=1.2V(Typ.) General Description PNPN devices designed for high volume, line-powered

FQP6N40CF

Contextual Info: FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)

IRFP350

Abstract: TB334
Contextual Info: IRFP350 Data Sheet July 1999 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP350 PACKAGE TO-247 2319.4 Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

IRFD310

Abstract: TB334 400V to 6V DC Regulator TO 220 Package
Contextual Info: IRFD310 Data Sheet July 1999 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET 2324.4 Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

Contextual Info: SCR0840 Sensitive Gate SCRs 400V, 0.8A Sensitive Gate SCRs Features „ Repetitive Peak Off-State Voltage : 400V „ R.M.S On-State Current : IT RMS =0.8A „ Low On-state Voltage : VTM=1.2V(Typ.) General Description PNPN devices designed for high volume, line-powered

IRFP340

Abstract: TA17424 TB334
Contextual Info: IRFP340 Data Sheet January 2002 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features • 11A, 400V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are

IRFD320

Abstract: TA17404 TB334
Contextual Info: IRFD320 Data Sheet January 2002 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 0.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: TM FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)

IRFP340

Abstract: TA17424 TB334 T2T-2
Contextual Info: IRFP340 Data Sheet July 1999 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 11A, 400V Ordering Information IRFP340 TO-247 • rDS ON = 0.550Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

IRFF310

Abstract: TB334
Contextual Info: IRFF310 Data Sheet January 2002 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 1.35A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFF320

Abstract: TA17404 TB334
Contextual Info: IRFF320 Data Sheet March 1999 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 2.5A, 400V Formerly developmental type TA17404. Ordering Information PACKAGE 1890.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

IRFF330

Abstract: TA17414 TB334
Contextual Info: IRFF330 Data Sheet March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET • 3.5A, 400V Formerly developmental type TA17414. Ordering Information IRFF330 PACKAGE TO-205AF 1893.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET 1  1 1 TO-220F1 TO-220F2 FEATURES * 10A, 400V, R DS ON (0.55Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds