IRFF320
Abstract: TA17404 TB334
Text: IRFF320 Data Sheet March 1999 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 2.5A, 400V Formerly developmental type TA17404. Ordering Information PACKAGE 1890.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFF320
TA17404.
IRFF320
TA17404
TB334
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IRFD320
Abstract: TA17404 TB334
Text: IRFD320 Data Sheet January 2002 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 0.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFD320
IRFD320
TA17404
TB334
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IRF720
Abstract: TA17404 TB334
Text: IRF720 Data Sheet January 2002 3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF720
TA17404.
IRF720
TA17404
TB334
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ifu320
Abstract: ifr320 irfu320 IRFR320 IRFR3209A TA17404 TB334
Text: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRFR320,
IRFU320
TA17404.
ifu320
ifr320
irfu320
IRFR320
IRFR3209A
TA17404
TB334
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Untitled
Abstract: No abstract text available
Text: IRFD320, IRFD321, IRFD322, IRFD323 S E M I C O N D U C T O R 0.5A and 0.4A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.5A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFD320,
IRFD321,
IRFD322,
IRFD323
TA17404.
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IRF720
Abstract: TA17404 TB334
Text: IRF720 Data Sheet July 1999 3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF720
TA17404.
IRF720
TA17404
TB334
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ifu320
Abstract: ifr320 irfu320 TB334 IRFR320 IRFR3209A TA17404
Text: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRFR320,
IRFU320
TA17404.
ifu320
ifr320
irfu320
TB334
IRFR320
IRFR3209A
TA17404
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BUZ76
Abstract: TA17404 TB334
Text: BUZ76 Semiconductor Data Sheet 3A, 400V, 1.800 Ohm, N-Channel Power MOSFET October 1998 File Number 2264.1 Features • 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 1.800Ω (BUZ76) field effect transistor designed for applications such as
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BUZ76
BUZ76)
TA17404.
BUZ76
TA17404
TB334
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IRFF320
Abstract: TA17404 TB334
Text: IRFF320 Data Sheet January 2002 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 2.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF320
TA17404.
IRFF320
TA17404
TB334
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ifr320
Abstract: No abstract text available
Text: IRF320, IRF321 IRF322, IRF323 S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRF320,
IRF321
IRF322,
IRF323
TA17404.
ifr320
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ifr320
Abstract: IRF320 IRF322 TB334 IRF321 IRF323 TA17404 irf3202
Text: IRF320, IRF321, IRF322, IRF323 Semiconductor 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF320,
IRF321,
IRF322,
IRF323
ifr320
IRF320
IRF322
TB334
IRF321
IRF323
TA17404
irf3202
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Untitled
Abstract: No abstract text available
Text: IRFF320 Data Sheet Title FF3 bt 5A, 0V, 00 m, March 1999 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF320
IRFF320
O-205AF
TB334
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TA17404
Abstract: AN7254 RFM4N35 RFM4N40 RFP4N35 RFP4N40 TB334
Text: RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor Data Sheet 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs [[ /Title /Title These are N-channel enhancement-mode silicon-gate RFM4N ( power field effect transistors designed for applications such 35,
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RFM4N35,
RFM4N40,
RFP4N35,
RFP4N40
TA17404.
RFM4N35
O-204AA
AN7254
AN7260.
TA17404
RFM4N35
RFM4N40
RFP4N35
RFP4N40
TB334
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IFU320
Abstract: ifr320 fu320
Text: IRFR320, IR FU320 S e m iconductor Data Sheet 3.1 A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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IRFR320,
FU320
IRFU320
IFU320
ifr320
fu320
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IRF722
Abstract: IRF720 IRF7221
Text: iH A R R is IRF720, IRF721, IRF722, IRF723 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8 A and 3.3A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF720,
IRF721,
IRF722,
IRF723
TA17404.
RF723
RF720,
RF722,
RF723
IRF722
IRF720
IRF7221
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Untitled
Abstract: No abstract text available
Text: h a IRFF320, IRFF321, IRFF322, IRFF323 r r i s ” “ ICONDUCTOE 2.0A and 2.5A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.0A and 2.5A, 350V to 400V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRFF320,
IRFF321,
IRFF322,
IRFF323
TA17404323
RFF321,
RFF322,
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IFR320
Abstract: No abstract text available
Text: w vys S IRF320, IRF321, IRF322, IRF323 Semiconductor y y 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRF320,
IRF321,
IRF322,
IRF323
RF322,
IFR320
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Untitled
Abstract: No abstract text available
Text: RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor October 1998 Data Sheet 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,
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RFM4N35,
RFM4N40,
RFP4N35,
RFP4N40
TB334
TA17404.
AN7254
AN7260.
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Untitled
Abstract: No abstract text available
Text: IRF720, IRF721, IRF722, IRF723 h a r r is SEMIC0NDUCT0R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRF720,
IRF721,
IRF722,
IRF723
RF722,
RF723
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irfd320
Abstract: No abstract text available
Text: H a IRFD320, IRFD321, IRFD322, IRFD323 r r i s ” “ I CONDUCTOE 0.5A and 0.4A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.5A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFD320,
IRFD321,
IRFD322,
IRFD323
TA1740GE
RFD322,
irfd320
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IFR320
Abstract: IRF322 IRF320
Text: IRF320, IRF321 IRF322, IRF323 HARRIS S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8 A and 3.3A, 350V and 400V • High Input Im pedance These are N-Channel enhancement mode silicon gate
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IRF320,
IRF321
IRF322,
IRF323
TA17404.
IRF321,
RF322,
IFR320
IRF322
IRF320
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ifu320
Abstract: IFR321 ifr320 IRFU320
Text: IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 H A R R IS SEMICONDUCTOR 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.6A and 3.1 A, 350V and 400V These are N-Channel enhancement mode silicon gate
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IRFR320,
IRFR321,
IRFR322,
IRFU320,
IRFU321,
IRFU322
ifu320
IFR321
ifr320
IRFU320
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Untitled
Abstract: No abstract text available
Text: P *3 3 S IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.6A and 3.1 A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRFR320,
IRFR321,
IRFR322,
IRFU320,
IRFU321,
IRFU322
RFR322,
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Untitled
Abstract: No abstract text available
Text: BUZ76A Semiconductor Data Sheet October 1998 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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BUZ76A
TA17404.
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